Results 81 to 90 of about 15,647 (243)
Nanophotonics, Volume 15, Issue 12, 25 June 2026.A low‐energy focused ion beam process achieves localized spectral modification of InAs quantum dots. By leveraging low ion straggle and a compact damage volume, this methodology offers unique spatial control and accuracy. This maskless approach provides a scalable platform for site‐selective engineering for advanced photonic integrated circuits and ...
Mehdi Ahmadian +8 more
wiley +1 more source
High purity In0.5Ga0.5Pgrown on GaAs by liquid-phase epitaxy
, 2012 [[abstract]]High purity In//0//. //5Ga//0//. //5P epitaxial layers lattice-matched to GaAs substrates were grown by liquid phase epitaxy using a supercooling technique.
Wu;M.C;Su;Y.K.;Cheng;K.Y.;Chang;C.Y.
core +2 more sources
2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics
Advanced Functional Materials, Volume 36, Issue 44, 1 June 2026.2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit +5 more
wiley +1 more source
Surface acoustic waves in semi-insulating Fe-doped GaN films grown by hydride vapor phase epitaxy
, 2014 The propagation properties of surface acoustic waves (SAWs) in semi-insulating Fe-doped GaN films grown on sapphire substrates by hydride vapor phase epitaxy are investigated.
Liu ZH(刘争晖) +7 more
core
Formation peculiarities of free-standing III-v single crystalline films prepared by solution method
Physical Sciences and Technology, 2015 In this paper, liquid phase epitaxy method used for the synthesis of free-standing single crystalline films of IIIV compounds by interaction of the quaternary Sn-Al-Ga-As liquid with binary solid GaAs substrate.
V. Antoschenko +4 more
doaj
Kinetic Regimes of Hydrogen Absorption in Thin Films
Advanced Functional Materials, Volume 36, Issue 44, 1 June 2026.Knowledge of the hydrogen incorporation mechanisms in thin layers in relation to the amount absorbed is essential to design coatings and devices compatible with hydrogen‐based technologies. A combination of simultaneous in situ methods gives detailed insight into the hydrogenation of a prototypical hydrogen absorber layer in a time‐dependent manner ...
Laura Guasco +7 more
wiley +1 more source
Liquid phase epitaxy of GaAlAs on GaAs substrates with fine surface corrugations [PDF]
, 1974 Liquid phase epitaxy of GaAlAs was performed on GaAs fine surface corrugations.
Nakamura, M. +5 more
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Energy‐Resolved Femtosecond Dynamics of Plasmon‐Induced Hole Injection at Au/GaN Heterointerfaces
Advanced Science, Volume 13, Issue 33, 15 June 2026.We reveal the spectral signature of ultrafast nonthermal hot‐hole transfer at plasmonic heterointerfaces, which reshapes hot‐carrier relaxation dynamics and significantly enhances hydrogen evolution, providing a mechanistic basis for optimizing hot‐carrier utilization in photocatalysis.
Yuying Gao +8 more
wiley +1 more source
Liquid Phase Epitaxy Doping for High-Performance Emitters in Silicon Solar Cells [PDF]
, 2018 OF THE THESISLiquid Phase Epitaxy Doping for High-Performance Emitters in Silicon Solar CellsbyTulika RastogiMaster of ScienceUniversity of California San Diego, 2018Professor David Fenning, ChairRecombination in the emitter is a primary contributor to ...
Rastogi, Tulika
core
White light emitting diod: situation and progress trend
Технологія та конструювання в електронній апаратурі, 2006 The main global trends in the development of high-brightness light-emitting diodes are considered. According to these trends, by 2012 the luminous efficacy of light sources based on white LEDs will exceed that of incandescent lamps by a factor of 100 ...
N. Ja. Struhljak +3 more
doaj