Results 101 to 110 of about 15,647 (243)

k‐Selective Electrical‐to‐Magnon Transduction with Finite‐Element‐Resolved Sub‐Micron Nanoantennas

open access: yesAdvanced Physics Research, Volume 5, Issue 6, June 2026.
We introduce a coupled finite‐element‐finite‐difference framework that links impedance‐matched nanoantenna geometries to propagating spin‐wave dynamics, capturing skin effects, proximity effects, and taper leakage beyond uniform‐current models. Applied to coplanar‐waveguide and stripline nanoantennas on yttrium‐iron‐garnet, the simulations achieve ...
Andreas Höfinger   +11 more
wiley   +1 more source

Optical surface waves in periodic layered medium grown by liquid phase epitaxy [PDF]

open access: yes, 1978
Optical surface waves propagating along the surface of a multilayer stack have been observed. The multilayer stack is grown by liquid phase epitaxy.
Chen, P. C., Yariv, A., Yeh, P., Ng, W.
core  

Extremely Low Temperature Silicon Liquid Phase Epitaxy

open access: yes, 1995
By liquid phase epitaxy (LPE) we have grown silicon layers on silicon and partially masked silicon at temperatures below 450 °C from Ga and Ga-In solutions. Oxidation of the cleaned silicon substrate surfaces before epitaxial growth has been prevented by
M. Konuma   +6 more
core   +1 more source

Sputtered LiNbO3 Thin Films for Application in Integrated Photonics: A Review

open access: yesCrystals
LiNbO3 plays a significant role in modern integrated photonics because of its unique properties. One of the challenges in modern integrated photonics is reducing chip production cost.
Igor Kuznetsov   +3 more
doaj   +1 more source

Exploring the Synthesis, Properties, and Applications of Molybdenum Disulfide (MoS2): A Comprehensive Review

open access: yesEngineering Reports, Volume 8, Issue 6, June 2026.
An overview of MoS2 synthesis methods, key physicochemical properties, and emerging applications in electronics, catalysis, and energy storage. ABSTRACT Among the transition metals, molybdenum disulfide (MoS2) is a highly recognized dichalcogenide that has gained significant attention for its diverse applications in electronics, catalysis, and energy ...
Andishe Shakery, Gholam Reza Khayati
wiley   +1 more source

LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES

open access: yes, 1991
The GaInAsSb/AlGaAsSb/GaSb heterostructures were grown by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, electroprobe microanalysis (EPMA), double-crystal X-ray diffraction, capacitance-voltage
LUI XF   +10 more
core  

Flux growth and liquid phase epitaxy of Mn6+-doped molybdates and tungstates [PDF]

open access: yes, 2003
(Ca/Sr/Ba)(W/Mo)O4 crystals were flux-grown and the growth conditions were optimized. First BaMoO4:Mn6+ layers were grown by liquid-phase epitaxy at low temperatures on large Czochralski-grown substrates and investigated by absorption ...
Ehrentraut, D.   +3 more
core  

Synthesis of Core–Shell Te@Se Quantum Dots and Their Broadband Photodetector Performance in Low Concentration Electrolytes

open access: yesLaser &Photonics Reviews, Volume 20, Issue 12, 18 June 2026.
Te@Se core–shell heterojunction quantum dots (QDs) are synthesized by a two‐step strategy via combining liquid‐phase exfoliation and epitaxial growth. As active materials in photoelectrochemical photodetectors, Te@Se QDs exhibit excellent photo‐response performance in low‐concentration electrolytes and deionized water.
Yiming Zhao   +8 more
wiley   +1 more source

Superconductivity in Gallium‐Doped Germanium‐on‐Insulator Through Ion Implantation and Flash‐Lamp Annealing

open access: yesphysica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 6, June 2026.
Superconducting Ge‐on‐insulator is achieved through nonequilibrium hyperdoping technologies by combining ion implantation and flash‐lamp annealing. The work highlights the potential of GeOI for scalable hybrid semiconductor–superconductor and future quantum devices.
Yu Cheng   +8 more
wiley   +1 more source

Atomically Thin Sn:GaN‐GaN Homojunction for High‐Sensitivity β‐Ray Detection

open access: yesRare Metals, Volume 45, Issue 6, June 2026.
ABSTRACT Gallium nitride (GaN), a third‐generation wide‐bandgap semiconductor renowned for its superior radiation tolerance, holds promise for advanced β‐ray detection. Herein, a scalable liquid metal‐assisted in situ synthesis method is presented to fabricate Sn‐doped GaN homojunctions via gallium oxide printing followed by ammonolysis, enabling ...
Weiqing Liu   +8 more
wiley   +1 more source

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