Results 121 to 130 of about 15,647 (243)

The Growth of Photoactive Porphyrin-Based MOF Thin Films Using the Liquid-Phase Epitaxy Approach and their Optoelectronic Properties. [PDF]

Materials (Basel), 2019
Ngongang Ndjawa GO, Tchalala MR, Shekhah O, Khan JI, Mansour AE, Czaban-Jóźwiak J, Weselinski LJ, Ait Ahsaine H, Amassian A, Eddaoudi M.   +9 more
europepmc   +1 more source

Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications. [PDF]

Sci Rep, 2019
Li HW, Chang CW.
europepmc   +1 more source

In-situ Liquid Phase Epitaxy: Another Strategy to Synthesize Heterostructured Core-shell Composites. [PDF]

Sci Rep, 2016
Wen Z, Wang G.
europepmc   +1 more source

Pre-epitaxial treatment of GaSb substrates for liquid-phase growth of homoepitaxial layers

Технологія та конструювання в електронній апаратурі, 2008
The results of investigation to find out the optimal conditions of pre-epitaxial GaSb substrate treatment by chemical etching in inorganic acid mixes are offered.
О. V. Andronova, V. V. Kurak
doaj  

Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy. [PDF]

Sci Rep, 2015
Zhou S, Liu F, Prucnal S, Gao K, Khalid M, Baehtz C, Posselt M, Skorupa W, Helm M.   +8 more
europepmc   +1 more source

Growth by liquid phase epitaxy and laser performance at 2.012µm of a Tm:YAG planar waveguide

, 1995
We report the growth by liquid phase epitaxy, Ti:sapphire and diode pumped laser operation of Tm:YAG planar waveguides.
Large, A.C., Rameix, A., Ferrand, B., Shepherd, D.P., Tropper, A.C., Hanna, D.C., Guy, S., Borel, C., Jaquier, B., Joubert, M.F., Thony, P., Warburton, T.J.   +11 more
core  

Complex-doped InP/InGaAsP epitaxial structures for optoelectronics

Технологія та конструювання в електронній апаратурі
The influence of complex doping with rare-earth elements (Yb, Gd) and aluminum on the electrophysical properties of InGaAsP layers grown by liquid-phase epitaxy has been studied.
S. I. Krukovsky
doaj  

THEORETICAL TREATMENT OF A3B5 CHLORIDE VAPOR-PHASE EPITAXY - GROWTH, DOPING, OPTIMIZATION

, 1993
A theoretical description of chloride vapour-phase epitaxy (CVPE) has been proposed which contains two-dimensional (2D) gas-dynamic equations for transport of reactive components and kinetic equations for surface growth processes connected by nonlinear ...
IPATOVA IP, DOSTOV VL, KULIKOV AY, DOSTOV VL IOFFE INSTST PETERSBURG 194021RUSSIA   +3 more
core  

Terbium-doped gadolinium garnet thin films grown by liquid phase epitaxy for scintillation detectors. [PDF]

RSC Adv
Baillard A, Douissard PA, Loiko P, Martin T, Mathieu E, Camy P.   +5 more
europepmc   +1 more source

GROWTH OF SILICON BY LIQUID PHASE EPITAXY AT LOW TEMPERATURE: APPLICATION TO THIN FILM SOLAR CELLS

, 2011
Growth of silicon thin layer by Liquid Phase Epitaxy (LPE) at low temperature (800 °C) can be an attractive technique to fabricate low cost photovoltaic cells.
EL OMARI, H., FAVE, A., ABDO, F., PISCH, A., LEMITI, M., BERNARD, C.   +5 more
core