Results 61 to 70 of about 5,232 (243)

Homogenization and two-scale models for liquid phase epitaxy

, 2009
We consider models for liquid phase epitaxy without and with elasticity. The models are based on continuum models for fluid flow and transport of adatoms in the liquid solution and a BCF–model for the growth of the solid phase.
Eck, Ch., Ch. Eck, H. Emmerich, Emmerich, H.   +3 more
core   +1 more source

Obtaining of high-quality InP active layers in geterostructure’s composition for Gunn diodes [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2010
It is shown that for epitaxial InP layers obtained by liquid-phase epitaxy complex dopping of indium melts by optimal concentrations of rare-earth Yb and isovalent element Al promotes useful increase of cleaning effect from background impurities and ...
Vakiv M. M., Krukovskiy S. I., Zayachuk D. M., Mykhashchuk Iu. S., Krukovskiy R. S.   +4 more
doaj   +2 more sources

Optimization of the concentration’s distribution of the carriers on thickness of epitaxial layers

Технологія та конструювання в електронній апаратурі, 2007
A piston-type device for liquid-phase epitaxy of AIIIBV semiconductor compounds has been modified. The possibility of controlling the impurity concentration gradient, which creates internal electric fields in the photodetecting and active regions of ...
A. V. Karimov, D. M. Yodgorova, F. A. Giyasova, R. A. Saidova, Sh. A. Haydarov   +4 more
doaj  

Strain–Engineered Method for Atomically Sharp Interfaces in 2D TMDC Lateral Heterostructures

Small Methods, EarlyView.
ABSTRACT While strain is widely used to tune the properties of two–dimensional transition–metal dichalcogenides (TMDCs), its role in controlling chalcogen exchange and alloy formation at interfaces of lateral heterostructures (LHSs) needs further exploration.
Mariam Hakami, Jui‐Cheng Kao, Vincent Tung, Takahito Takeda, Chun‐Wei Pao, Areej Aljarb   +5 more
wiley   +1 more source

Isotherm Theoretical Study of the Al_xGa_1-xAs_ySb_1-y Quaternary Alloy Using the Regular Solution Approximation for Its Possible Growth via Liquid-Phase Epitaxy at Low Temperatures. [PDF]

Entropy (Basel), 2022
Gastellóu E, García R, Herrera AM, Ramos A, García G, Robles M, Rodríguez JA, Ramírez YD, Carrillo RC.   +8 more
europepmc   +1 more source

Determining bismuth content in GaAsBi alloys by energy‐dispersive X‐ray spectroscopy: A case study with multiple sets of k*‐factors for analytical transmission electron microscopy

Journal of Microscopy, EarlyView.
Abstract Measuring the bismuth (Bi) content of ternary gallium arsenide bismuthide (GaAsBi) alloys is important because it sensitively influences their bandgap, and Bi is known to segregate vertically to the surface and sometimes also laterally during growth, so elemental distribution maps need to be quantified.
T. Walther
wiley   +1 more source

Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy

, 2008
Lattice matched Ga_(1-x)In_xAs_ySb_(1-y) quaternary alloy films for thermophotovoltaic cells were successfully grown on n-type GaSb substrates by liquid phase epitaxy.
Chen Nuofu, Yang Xiaoli, Wang Yu, Gao Fubao, Liu Lei   +4 more
core  

Luminescence Properties of GaAs Epitaxial Layers Grown By Liquid Phase Epitaxy and Molecular Beam Epitaxy

, 1980
The luminescence properties of undoped GaAs-Ga1−x Alx As layers grown by liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) are compared for double heterostructure and multiquantum well (MQW) superlattices.
P. M. Petroff
core   +1 more source

Growth of GaSb/InAs heterostructures by liquid phase epitaxy without substrate dissolution

Технологія та конструювання в електронній апаратурі, 2003
The features of GaSb/InAs heterostructure growth from the liquid phase are considered. A modified method of pulsed cooling of the solution–melt is proposed, which makes it possible to avoid dissolution of the InAs substrate when in contact with the ...
I. E. Maronchuk, V. V. Kurak, E. V. Andronova, E. A. Baganov   +3 more
doaj  

High-Quality Thin Films of UiO-66-NH₂ by Coordination Modulated Layer-by-Layer Liquid Phase Epitaxy. [PDF]

Chemistry, 2021
Semrau AL, Fischer RA.
europepmc   +1 more source