Results 191 to 200 of about 15,647 (243)

Segregation in liquid phase epitaxy of garnets

Journal of Crystal Growth, 1982
Abstract Experimental results on the incorporation of rare-earth ions into Y 3 Al 5 O 12 and Y 3 Fe 5 O 12 grown by liquid phase epitaxy on 〈111〉 substrates are presented. It is shown that a plot of [RE]/[Y] ratio in the solid versus [RE]/[Y] ratio in the solution on a log-log scale results in straight lines with a slope near to unity.
W. Van Erk, J.M. Robertson
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Liquid phase epitaxy of garnets

Journal of Crystal Growth, 1978
Abstract A short introduction to the technique of liquid phase epitaxy of single crystal thin films of magnetic garnets is given with the emphasis on the relative merits of vertical and horizontal dipping. For vertical dipping results are given for the thickness profiles from top to bottom of the samples and the inhomogeneities within the film ...
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Liquid phase epitaxial growth of AlGaSb

Journal of Crystal Growth, 1984
Abstract Optimum conditions for the liquid phase epitaxial growth of AlGaSb and for the heat treatment of substrates were investigated. The high-temperature heat treatment of GaSb substrates prior to growth was found to damage the surface of the substrates, resulting in poor interfacial properties and formation of Ga inclusions.
Toshimi Wada, Katsuhiko Kubota, Toshiaki Ikoma   +2 more
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Liquid Phase Epitaxy

2009
Liquid phase epitaxy (LPE) is a growth technique that can be suitable for photovoltaic applications regarding its simplicity and its capacity to produce high-quality thin film. The growth of Silicon proceeds from a molten solution (metal + Si), which is slowly cooled. Temperature range is typically 700–1,000°C and growth rate can be as high as 1 μm min-
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Liquid-Phase Epitaxy of In× GA1−×As

Journal of The Electrochemical Society, 1970
layers grown by liquid‐phase epitaxy were obtained in the range of , when grown on the (111 Ga) plane of GaAs. Attempts to grow alloys on the (110), (111 As), (100), and (112 As) planes resulted in polycrystalline layers. The alloy composition was determined by x‐ray fluorescence and the band gap by infrared transmission.
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Liquid phase epitaxy of hexagonal ferrites

Materials Research Bulletin, 1975
Abstract Single crystal films of the hexagonal ferrite Zn 2 Y, having the chemical formula Ba 2 Zn 2 Fe 12 O 22 , were grown by the isothermal dipping method of liquid phase epitaxy using a PbOBaOB 2 O 3 flux. The substrates were flux-grown M-type hexagonal ferrite crystals having the chemical formula BaFe 12 O 19 .
F.S. Stearns, H.L. Glass
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Liquid phase epitaxial growth of CuInS2

Thin Solid Films, 1986
Abstract Epitaxial CuInS 2 layers were grown on GaP substrates by liquid phase epitaxy using indium as solvent. Both n- and p-type layers with a wide range of electrical characteristics were obtained at a growth temperature of 805 °C with a cooling rate ranging from 0.6 to 0.8 °C min −1 .
L.W. Chang, J. Gong, C.Y. Sun, H.L. Hwang   +3 more
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Be doping of liquid-phase-epitaxial InP

Journal of Applied Physics, 1979
The distribution coefficient for Be-doped liquid-phase-epitaxial InP is determined to be kBe?0.1. Comparison is made with other p-type and n-type impurities with regard to suitability for use in GaInPAs-InP double heterostructures.
E. B. Abrams, S. Sumski, W. A. Bonner, J. J. Coleman   +3 more
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Liquid Phase Epitaxy of Garnets

1989
Rare earth (R) iron garnets (R3Fe5O12) have excellent properties for magnetic, magneto-optic and microwave applications. For magnetic bubble memory devices requiring single crystal films of several micrometer thickness an epitaxial technique had to be developed.
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Nonconservative liquid-phase epitaxy of semiconductors

Soviet Physics Journal, 1988
The kinetics of nonconservative liquid-phase epitaxy of semiconductors with replenishment of the solution in a melt under the action of different applied fields and owing to the internal energy of the system itself are analyzed. The physical-chemical laws governing these processes, which are useful for growing high-quality semiconductor epitaxial ...
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