Results 211 to 220 of about 499,969 (291)
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Liquid‐phase epitaxy of Potassium Niobate
Crystal Research and Technology, 1984AbstractThe possibility of potassium niobate films growing by means of liquid phase epitaxy technique was investigated. The physical and chemical analyses of K2O‐V2O5‐Nb2O5 system were carried out. Corundum wafers with {1¯210} and {0001} orientations served as substrates. The grown films were 10–30 μm thick.
O. A. Khachaturyan, R. S. Madoyan
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Liquid-phase epitaxy over channelled substrates
Journal of Crystal Growth, 1984Abstract A review is given of liquid-phase epitaxy over channelled substrates, as the major growth technique for the fabrication of mode-stabilized semiconductor diode lasers. After a brief historical overview, the characteristics of LPE over channelled substrates are discussed from a thermodynamic point of view.
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Liquid Phase Epitaxy of Garnets
1989Rare earth (R) iron garnets (R3Fe5O12) have excellent properties for magnetic, magneto-optic and microwave applications. For magnetic bubble memory devices requiring single crystal films of several micrometer thickness an epitaxial technique had to be developed.
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Liquid Phase Epitaxial GaAs Solar Cells
SAE Technical Paper Series, 1984<div class="htmlview paragraph">Recent progress in the large scale production of GaAs solar cells based on the Hughes-developed infinite solution epitaxy has demonstrated the feasibility for manufacturing the cells at a cost low enough to warrant their application to satellite power systems.
G. S. Kamath, H. Dill
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Liquid Phase Epitaxy and Growth Technology
1996Liquid-Phase Epitaxy (LPE) has many advantages and is capable of producing reliable semiconductor devices. This chapter provides a detailed description of the equipment necessary for LPE and the epitaxial techniques required for double heterostructures. As discussed in Chap.
Kenichi Iga, Susumu Kinoshita
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Phenomenological Theory on Liquid Phase Epitaxy
Japanese Journal of Applied Physics, 1970Epitaxial growth of semiconductor crystal from metal-semiconductor solution, particularly the growth of GaAs from Sn-GaAs solution, was analysed on the basis of some simplified assumptions. Formulae were derived for the depth of initial etch back and for the thickness of the grown layer.
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ACS Applied Materials and Interfaces, 2016
V. Chernikova, O. Shekhah, M. Eddaoudi
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V. Chernikova, O. Shekhah, M. Eddaoudi
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Liquid phase epitaxy magnetic garnet films and their applications
Chinese Physics B, 2018Y. Rao +6 more
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