Results 101 to 110 of about 5,232 (243)

k‐Selective Electrical‐to‐Magnon Transduction with Finite‐Element‐Resolved Sub‐Micron Nanoantennas

Advanced Physics Research, Volume 5, Issue 6, June 2026.
We introduce a coupled finite‐element‐finite‐difference framework that links impedance‐matched nanoantenna geometries to propagating spin‐wave dynamics, capturing skin effects, proximity effects, and taper leakage beyond uniform‐current models. Applied to coplanar‐waveguide and stripline nanoantennas on yttrium‐iron‐garnet, the simulations achieve ...
Andreas Höfinger, Andrey A. Voronov, David Schmoll, Sabri Koraltan, Florian Bruckner, Claas Abert, Dieter Suess, Morris Lindner, Timmy Reimann, Carsten Dubs, Andrii V. Chumak, Sebastian Knauer   +11 more
wiley   +1 more source

Flux growth and liquid phase epitaxy of Mn⁶⁺-doped molybdates and tungstates [PDF]

, 2003
(Ca/Sr/Ba)(W/Mo)O4 crystals were flux-grown and the growth conditions were optimized. First BaMoO4:Mn6+ layers were grown by liquid-phase epitaxy at low temperatures on large Czochralski-grown substrates and investigated by absorption ...
Ehrentraut, D., Pollnau, Markus, Romanyuk, Y.E., Kück, S.   +3 more
core  

The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxy

, 2020
It is shown that addition of Gd to the melt during liquid phase epitaxy growth of InGaAsSb layers greatly reduces contamination of the samples with residual donor impurities, such as sulfur and silicon.
Vinogradova G.V., Borodina O.M., Polyakov A.Y., Kozhukhova E.A., Balmashnov A.A., Druzhinina L.V., Smirnov N.B., Govorkov A.V., Dolginov L.M., Milnes A.G., Tunitskaya I.V.   +10 more
core   +1 more source

The obtaining of barrier-surface structures on the base of А4В6 quaternary solid solutions

Технологія та конструювання в електронній апаратурі, 2007
Surface‑barrier structures of the type Pb/δ-layer/р-Pb0,87Sn0,13Te0,96Se0,04/р+-Pb0,8Sn0,2Te/Au. were fabricated using liquid‑phase epitaxy and thermal vacuum deposition.
A. I. Tkachuk, O. N. Tsarenko, S. I. Raybets, I. Yu. Tkachuk, Yu. G. Kovalyov   +4 more
doaj  

Sputtered LiNbO₃ Thin Films for Application in Integrated Photonics: A Review

Crystals
LiNbO3 plays a significant role in modern integrated photonics because of its unique properties. One of the challenges in modern integrated photonics is reducing chip production cost.
Igor Kuznetsov, Anton Perin, Angelina Gulyaeva, Vladimir Krutov   +3 more
doaj   +1 more source

Exploring the Synthesis, Properties, and Applications of Molybdenum Disulfide (MoS2): A Comprehensive Review

Engineering Reports, Volume 8, Issue 6, June 2026.
An overview of MoS2 synthesis methods, key physicochemical properties, and emerging applications in electronics, catalysis, and energy storage. ABSTRACT Among the transition metals, molybdenum disulfide (MoS2) is a highly recognized dichalcogenide that has gained significant attention for its diverse applications in electronics, catalysis, and energy ...
Andishe Shakery, Gholam Reza Khayati
wiley   +1 more source

LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES

, 1991
The GaInAsSb/AlGaAsSb/GaSb heterostructures were grown by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, electroprobe microanalysis (EPMA), double-crystal X-ray diffraction, capacitance-voltage
LUI XF, YANG BH, LIN LY, GONG XY, XI JY, GAO FS, GONG XY SHIZUOKA UNIVELECTR RES INSTJOHOKU 3-5-1HAMAMATSUSHIZUOKA 432JAPAN, HAN WJ, MA YD, YU Y, WANG ZG   +10 more
core  

Synthesis of Core–Shell Te@Se Quantum Dots and Their Broadband Photodetector Performance in Low Concentration Electrolytes

Laser &Photonics Reviews, Volume 20, Issue 12, 18 June 2026.
Te@Se core–shell heterojunction quantum dots (QDs) are synthesized by a two‐step strategy via combining liquid‐phase exfoliation and epitaxial growth. As active materials in photoelectrochemical photodetectors, Te@Se QDs exhibit excellent photo‐response performance in low‐concentration electrolytes and deionized water.
Yiming Zhao, Artem V. Kuklin, Jiahui Hou, Mingqi He, Lyudmila V. Begunovich, Han Zhang, Ying Li, Hans Ågren, Lingfeng Gao   +8 more
wiley   +1 more source

Superconductivity in Gallium‐Doped Germanium‐on‐Insulator Through Ion Implantation and Flash‐Lamp Annealing

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 6, June 2026.
Superconducting Ge‐on‐insulator is achieved through nonequilibrium hyperdoping technologies by combining ion implantation and flash‐lamp annealing. The work highlights the potential of GeOI for scalable hybrid semiconductor–superconductor and future quantum devices.
Yu Cheng, Mao Wang, Xiaokai Yue, Lars Rebohle, René Hübner, Artur Erbe, Manfred Helm, Slawomir Prucnal, Shengqiang Zhou   +8 more
wiley   +1 more source

Atomically Thin Sn:GaN‐GaN Homojunction for High‐Sensitivity β‐Ray Detection

Rare Metals, Volume 45, Issue 6, June 2026.
ABSTRACT Gallium nitride (GaN), a third‐generation wide‐bandgap semiconductor renowned for its superior radiation tolerance, holds promise for advanced β‐ray detection. Herein, a scalable liquid metal‐assisted in situ synthesis method is presented to fabricate Sn‐doped GaN homojunctions via gallium oxide printing followed by ammonolysis, enabling ...
Weiqing Liu, Wenrong Fan, Zhangwei Xue, Mingyu Li, Yong Shi, Xiaowei Li, Lu Zhang, Chen Su, Jianxiong Shao   +8 more
wiley   +1 more source