Results 101 to 110 of about 28,350 (278)
Preepitaxial substrate treatment of GaSb for liquid phase technology homoepitaxial growth [PDF]
The results of investigation to find out the optimal conditions of preepitaxial GaSb substrate treatment by chemical etching in inorganic acid mixes are offered.
Andronova О. V., Kurak V. V.
doaj
SEM–EDX and XRD characterization confirm that pouches made from readily available aluminum foil, used in combination with a commercial cryo‐EM transfer system, effectively protect highly atmosphere‐sensitive and/or hygroscopic materials from contamination during transfer from inert environments to the SEM vacuum chamber.
Louis G. Corcoran +8 more
wiley +1 more source
White light emitting diod: situation and progress trend
The main global trends in the development of high-brightness light-emitting diodes are considered. According to these trends, by 2012 the luminous efficacy of light sources based on white LEDs will exceed that of incandescent lamps by a factor of 100 ...
N. Ja. Struhljak +3 more
doaj
Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs nanowires
We report on the morphological and structural properties of GaAs nanowires nucleated by self-catalyzed vapor-liquid-solid processes by molecular beam epitaxy on Si-treated GaAs substrates.
S. Ambrosini +4 more
doaj +1 more source
Electric transport properties of YBCO bicrystal films with 45o misorientation angle grown by liquid phase epitaxy [PDF]
Yu. Eltsev, Y. Yamada, K. Nakao
openalex +1 more source
Cross‐sectional electron microscopy reveals that antimonene hexagons exhibited inner defects and protective organic functionalization against oxidation. Temperature and power‐dependent Raman spectroscopy on varying thicknesses of FLA hexagons show that thinner flakes (<20 nm) exhibited a blueshift and intensity decrease, contrasting with the redshift ...
Marta Alcaraz +6 more
wiley +1 more source
The obtaining of barrier-surface structures on the base of А4В6 quaternary solid solutions
Surface‑barrier structures of the type Pb/δ-layer/р-Pb0,87Sn0,13Te0,96Se0,04/р+-Pb0,8Sn0,2Te/Au. were fabricated using liquid‑phase epitaxy and thermal vacuum deposition.
A. I. Tkachuk +4 more
doaj
The photovoltaic properties of an Al In As/InP heterojunctions grown by LPE method [PDF]
Work is presented on heterojunction solar cells which were studied under the NASA/Arizona State University intern program. The heterojunction solar cells were fabricated by the liquid phase epitaxy method.
Wang, Edward Y.
core +1 more source
A low‐bandgap InGaAsP heterojunction solar cell is demonstrated, achieving 19% efficiency via interface‐engineered InP passivation and TiO2 electron‐selective contact. Integrated into a mechanically stacked perovskite/III–V tandem, it delivers 27.7% efficiency.
Bikesh Gupta +8 more
wiley +1 more source
Sputtered LiNbO3 Thin Films for Application in Integrated Photonics: A Review
LiNbO3 plays a significant role in modern integrated photonics because of its unique properties. One of the challenges in modern integrated photonics is reducing chip production cost.
Igor Kuznetsov +3 more
doaj +1 more source

