Results 121 to 130 of about 5,232 (243)

Lateral-Liquid Phase Epitaxy of (101) Ge-On-Insulator from Si Template by Metal-Induced Crystallization

, 2011
We investigate metal-induced lateral crystallization (MILC) of Si on insulator to achieve (101) oriented Si films. Moreover, we demonstrate the lateral liquid phase epitaxy of high quality Ge(101) layers by using the MILC-Si films as crystal seed.
Masanobu Miyao, Masashi Kurosawa, Ryusuke Kato, Taizoh Sadoh, Naoyuki Kawabata   +4 more
core   +1 more source

The Growth of Photoactive Porphyrin-Based MOF Thin Films Using the Liquid-Phase Epitaxy Approach and their Optoelectronic Properties. [PDF]

Materials (Basel), 2019
Ngongang Ndjawa GO, Tchalala MR, Shekhah O, Khan JI, Mansour AE, Czaban-Jóźwiak J, Weselinski LJ, Ait Ahsaine H, Amassian A, Eddaoudi M.   +9 more
europepmc   +1 more source

Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications. [PDF]

Sci Rep, 2019
Li HW, Chang CW.
europepmc   +1 more source

In-situ Liquid Phase Epitaxy: Another Strategy to Synthesize Heterostructured Core-shell Composites. [PDF]

Sci Rep, 2016
Wen Z, Wang G.
europepmc   +1 more source

Growth by liquid phase epitaxy and laser performance at 2.012µm of a Tm:YAG planar waveguide

, 1995
We report the growth by liquid phase epitaxy, Ti:sapphire and diode pumped laser operation of Tm:YAG planar waveguides.
Large, A.C., Rameix, A., Ferrand, B., Shepherd, D.P., Tropper, A.C., Hanna, D.C., Guy, S., Borel, C., Jaquier, B., Joubert, M.F., Thony, P., Warburton, T.J.   +11 more
core  

Pre-epitaxial treatment of GaSb substrates for liquid-phase growth of homoepitaxial layers

Технологія та конструювання в електронній апаратурі, 2008
The results of investigation to find out the optimal conditions of pre-epitaxial GaSb substrate treatment by chemical etching in inorganic acid mixes are offered.
О. V. Andronova, V. V. Kurak
doaj  

Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy. [PDF]

Sci Rep, 2015
Zhou S, Liu F, Prucnal S, Gao K, Khalid M, Baehtz C, Posselt M, Skorupa W, Helm M.   +8 more
europepmc   +1 more source

Complex-doped InP/InGaAsP epitaxial structures for optoelectronics

Технологія та конструювання в електронній апаратурі
The influence of complex doping with rare-earth elements (Yb, Gd) and aluminum on the electrophysical properties of InGaAsP layers grown by liquid-phase epitaxy has been studied.
S. I. Krukovsky
doaj  

Terbium-doped gadolinium garnet thin films grown by liquid phase epitaxy for scintillation detectors. [PDF]

RSC Adv
Baillard A, Douissard PA, Loiko P, Martin T, Mathieu E, Camy P.   +5 more
europepmc   +1 more source

GROWTH OF SILICON BY LIQUID PHASE EPITAXY AT LOW TEMPERATURE: APPLICATION TO THIN FILM SOLAR CELLS

, 2011
Growth of silicon thin layer by Liquid Phase Epitaxy (LPE) at low temperature (800 °C) can be an attractive technique to fabricate low cost photovoltaic cells.
EL OMARI, H., FAVE, A., ABDO, F., PISCH, A., LEMITI, M., BERNARD, C.   +5 more
core