Results 121 to 130 of about 28,350 (278)

The enhancement of InGaAs Schottky barrier height by the addition of Pr2O3 and In2O3 in the liquid phase epitaxy [PDF]

, 1997
H. T. Wang, S. T. Chou, Liann‐Be Chang, T. W. Wang, H. Tang   +4 more
openalex   +1 more source

Silicon film solar cell process [PDF]

The most promising way to reduce the cost of silicon in solar cells while still maintaining performance is to utilize thin films (10 to 20 microns thick) of crystalline silicon. The method of solution growth is being employed to grow thin polycrystalline
Barnett, A. M., Hall, R. B., Mcneely, J. B.   +2 more
core   +1 more source

Optical transmittance of CdTe/HgCdTe/CdZnTe structures

Фізика і хімія твердого тіла
The infrared (IR) optical transmittance of the liquid phase epitaxy (LPE) mono-crystalline p-type MCT (Hg1-xCdxTe (x » 0.28)) layers grown on (111) surface of dielectric single crystal substrates CZT (Cd0.96Zn0.04Te) having the same lattice constant as ...
Fedir Sizov, Zinoviia Tsybrii
doaj   +1 more source

Advanced far infrared blocked impurity band detectors based on germanium liquid phase epitaxy

, 1998
Christopher S. Olsen
openalex   +2 more sources

GaIn As Quantum Dots (QD) grown by Liquid Phase Epitaxy (LPE) [PDF]

, 2009
Ortiz Vázquez F E, V.A. Mishurnyi, Gorbatchev A Yu, de Anda F, V.A. Elyukhin   +4 more
openalex   +1 more source

Nanoheteroepitaxial structures with quantum dots obtained by liquid-phase epitaxy based on GaP

, 2011
S.V. Bondarec, S.YU. Bykovskij, I. E. Maronchuk, I. I. Maronchuk, A.N. Petrash, S. Smirnov, D. D. Sanikovich   +6 more
openalex   +2 more sources

Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications. [PDF]

Sci Rep, 2019
Li HW, Chang CW.
europepmc   +1 more source

Liquid Phase Epitaxy growth of Tm3+-doped CaF2 thin-films based on LiF solvent

, 2019
Gurvan Brasse, Pavel Loiko, C. Grygiel, P. Leprince, Abdelmjid Benayad, Franck Lemarié, Jean‐Louis Doualan, Alain Braud, Patrice Camy   +8 more
openalex   +2 more sources

P/N InP homojunction solar cells by LPE and MOCVD techniques [PDF]

P/N InP homojunction solar cells have been prepared by using both liquid phase epitaxy (LPE) and metallorganic chemical vapor deposition (MOCVD) growth techniques. A heavily doped p-In sub 0.53Ga sub 0.47As contacting layer was incorporated into the cell
Choi, K. Y., Miller, B. I., Shen, C. C.
core   +1 more source

Pre-epitaxial treatment of GaSb substrates for liquid-phase growth of homoepitaxial layers

Технологія та конструювання в електронній апаратурі, 2008
The results of investigation to find out the optimal conditions of pre-epitaxial GaSb substrate treatment by chemical etching in inorganic acid mixes are offered.
О. V. Andronova, V. V. Kurak
doaj