Results 131 to 140 of about 28,350 (278)

In-situ Liquid Phase Epitaxy: Another Strategy to Synthesize Heterostructured Core-shell Composites. [PDF]

Sci Rep, 2016
Wen Z, Wang G.
europepmc   +1 more source

Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation [PDF]

, 2014
Yamina André, Kaddour Lekhal, Philip E. Hoggan, Geoffrey Avit, Fabian Cadiz, A. C. H. Rowe, D. Paget, Élodie Petit, Christine Leroux, Agnès Trassoudaine, Mohammed Réda Ramdani, Guillaume Monier, David Colas, Rabih Ajib, Dominique Castelluci, Evelyne Gil   +15 more
openalex   +1 more source

Semiconductor devices for optical communications in 1 micron band of wavelength [PDF]

Crystal growth and the characteristics of semiconductor lasers and diodes for the long wavelength band used in optical communications are examined.
Iga, K., Suematsu, Y.
core   +1 more source

Complex-doped InP/InGaAsP epitaxial structures for optoelectronics

Технологія та конструювання в електронній апаратурі
The influence of complex doping with rare-earth elements (Yb, Gd) and aluminum on the electrophysical properties of InGaAsP layers grown by liquid-phase epitaxy has been studied.
S. I. Krukovsky
doaj  

Luminescence and scintillation properties of liquid phase epitaxy grown Y2SiO5:Ce single crystalline films

, 2016
Kriangkrai Wantong, Nattasuda Yawai, Weerapong Chewpraditkul, Miroslav Kučera, Martin Hanuš, M. Nikl   +5 more
openalex   +2 more sources

Characterization of solar cells for space applications. Volume 14: Electrical characteristics of Hughes liquid phase epitaxy gallium arsenide solar cells as a function of intensity, temperature and irradiation [PDF]

Electrical characteristics of liquid phase epitaxy, P/N gallium aluminum arsenide solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature.
Anspaugh, B. E., Downing, R. G., Miyahira, T. F., Weiss, R. S.   +3 more
core   +1 more source

Selective growth of InGaSb and InGaAs pyramidal epilayers on 3-5 substrates by liquid phase epitaxy

, 2004
Zhang, Guoqiang
openalex   +2 more sources

Photoluminescence of Ga_xAl_1-xAs Crystals Grown by Liquid Phase Epitaxy [PDF]

, 1972
Koichi Sugiyama, Tsuyoshi Kawakami
openalex   +1 more source

Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy [PDF]

, 2000
V.P. Kladko
openalex   +1 more source

GaAs-based heterostructures with InAs quantum dots for photovoltaic converters

Технологія та конструювання в електронній апаратурі, 2008
The possibility of obtaining efficient third-generation photovoltaic converters (PVCs) has been considered. Heterostructures based on GaAs with InAs quantum dots (QDs), formed during liquid-phase epitaxy by the method of pulsed cooling of a saturated ...
I. E. Maronchuk, Yu. A. Dobrozhanskiy
doaj