Results 1 to 10 of about 14,212 (148)
Dynamics of mass transport during nanohole drilling by local droplet etching. [PDF]
Local droplet etching (LDE) utilizes metal droplets during molecular beam epitaxy for the self-assembled drilling of nanoholes into III/V semiconductor surfaces.
Heyn C +4 more
europepmc +7 more sources
Local droplet etching on InAlAs/InP surfaces with InAl droplets
GaAs quantum dots (QDs) grown by local droplet etching (LDE) have been studied extensively in recent years. The LDE method allows for high crystallinity, as well as precise control of the density, morphology, and size of QDs.
Xin Cao +8 more
doaj +2 more sources
Local Droplet Etching with Indium Droplets on InP(100) by Metal-Organic Vapor Phase Epitaxy. [PDF]
The local droplet etching (LDE) by using indium droplets on bare InP(100) surfaces is demonstrated in a metal-organic vapor phase epitaxy (MOVPE) environment for the first time. The role of an arsenic flow applied to self-assembled metallic indium droplets is systematically studied.
Sala EM, In Na Y, Heffernan J.
europepmc +4 more sources
Critical Aluminum Etch Material Amount for Local Droplet-Etched Nanohole-Based GaAs Quantum Dots
Local droplet-etched-based GaAs quantum dots are promising candidates for high-quality single and entangled photon sources. They have excellent optical and spin properties thanks to their size, shape and nearly strain-free matrix integration.
Timo Kruck +3 more
doaj +3 more sources
Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes [PDF]
Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs
Heyn Ch +7 more
doaj +2 more sources
Local droplet etching and subsequent refilling enables the fabrication of highly symmetric quantum dots with low fine structure splitting, suitable for generating polarization entangled photons.
Dennis Deutsch, Dirk Reuter
doaj +2 more sources
Shutter-Synchronized Molecular Beam Epitaxy for Wafer-Scale Homogeneous GaAs and Telecom Wavelength Quantum Emitter Growth [PDF]
Quantum dot (QD)-based single-photon emitter devices today are based on self-assembled random position nucleated QDs emitting at random wavelengths. Deterministic QD growth in position and emitter wavelength would be highly appreciated for industry-scale
Elias Kersting +6 more
doaj +2 more sources
Faceting of local droplet-etched nanoholes in AlGaAs [PDF]
Published by APS, College Park ...
Vonk, Vedran +8 more
openaire +2 more sources
Strain-free GaAs cone–shell quantum structures (CSQS) with widely tunable wave functions (WF) are fabricated using local droplet etching (LDE) during molecular beam epitaxy (MBE).
Christian Heyn +5 more
doaj +1 more source
Temperature-Enhanced Exciton Emission from GaAs Cone–Shell Quantum Dots
The temperature-dependent intensities of the exciton (X) and biexciton (XX) peaks from single GaAs cone–shell quantum dots (QDs) are studied with micro photoluminescence (PL) at varied excitation power and QD size.
Christian Heyn +4 more
doaj +1 more source

