Results 1 to 10 of about 14,212 (148)

Dynamics of mass transport during nanohole drilling by local droplet etching. [PDF]

open access: yesNanoscale Res Lett, 2015
Local droplet etching (LDE) utilizes metal droplets during molecular beam epitaxy for the self-assembled drilling of nanoholes into III/V semiconductor surfaces.
Heyn C   +4 more
europepmc   +7 more sources

Local droplet etching on InAlAs/InP surfaces with InAl droplets

open access: yesAIP Advances, 2022
GaAs quantum dots (QDs) grown by local droplet etching (LDE) have been studied extensively in recent years. The LDE method allows for high crystallinity, as well as precise control of the density, morphology, and size of QDs.
Xin Cao   +8 more
doaj   +2 more sources

Local Droplet Etching with Indium Droplets on InP(100) by Metal-Organic Vapor Phase Epitaxy. [PDF]

open access: yesCryst Growth Des
The local droplet etching (LDE) by using indium droplets on bare InP(100) surfaces is demonstrated in a metal-organic vapor phase epitaxy (MOVPE) environment for the first time. The role of an arsenic flow applied to self-assembled metallic indium droplets is systematically studied.
Sala EM, In Na Y, Heffernan J.
europepmc   +4 more sources

Critical Aluminum Etch Material Amount for Local Droplet-Etched Nanohole-Based GaAs Quantum Dots

open access: yesCrystals
Local droplet-etched-based GaAs quantum dots are promising candidates for high-quality single and entangled photon sources. They have excellent optical and spin properties thanks to their size, shape and nearly strain-free matrix integration.
Timo Kruck   +3 more
doaj   +3 more sources

Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes [PDF]

open access: yesNanoscale Research Letters, 2009
Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs
Heyn Ch   +7 more
doaj   +2 more sources

Influence of the Etching Material Deposition Rate and Annealing Time on Nanohole Morphology Etched into InP/In0.52Al0.48As Layers via Local Droplet Epitaxy

open access: yesCrystals
Local droplet etching and subsequent refilling enables the fabrication of highly symmetric quantum dots with low fine structure splitting, suitable for generating polarization entangled photons.
Dennis Deutsch, Dirk Reuter
doaj   +2 more sources

Shutter-Synchronized Molecular Beam Epitaxy for Wafer-Scale Homogeneous GaAs and Telecom Wavelength Quantum Emitter Growth [PDF]

open access: yesNanomaterials
Quantum dot (QD)-based single-photon emitter devices today are based on self-assembled random position nucleated QDs emitting at random wavelengths. Deterministic QD growth in position and emitter wavelength would be highly appreciated for industry-scale
Elias Kersting   +6 more
doaj   +2 more sources

Faceting of local droplet-etched nanoholes in AlGaAs [PDF]

open access: yesPhysical Review Materials, 2018
Published by APS, College Park ...
Vonk, Vedran   +8 more
openaire   +2 more sources

Strong Electric Polarizability of Cone–Shell Quantum Structures for a Large Stark Shift, Tunable Long Exciton Lifetimes, and a Dot-to-Ring Transformation

open access: yesNanomaterials, 2023
Strain-free GaAs cone–shell quantum structures (CSQS) with widely tunable wave functions (WF) are fabricated using local droplet etching (LDE) during molecular beam epitaxy (MBE).
Christian Heyn   +5 more
doaj   +1 more source

Temperature-Enhanced Exciton Emission from GaAs Cone–Shell Quantum Dots

open access: yesNanomaterials, 2023
The temperature-dependent intensities of the exciton (X) and biexciton (XX) peaks from single GaAs cone–shell quantum dots (QDs) are studied with micro photoluminescence (PL) at varied excitation power and QD size.
Christian Heyn   +4 more
doaj   +1 more source

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