Results 111 to 120 of about 14,212 (148)

Alloying during local droplet etching of AlGaAs surfaces with aluminium

Journal of Applied Physics, 2019
Local droplet etching (LDE) drills self-assembled nanoholes into AlGaAs surfaces and represents a powerful technique for the fabrication of versatile quantum structures like quantum dots, rings, and molecules. Usually, LDE is performed at temperatures T=600−680°C if Al is used as the etching material.
M. Zocher, Ch. Heyn, W. Hansen
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Self-Assembly of Semiconductor Quantum Rings by Local Droplet Etching

Journal of Nanoelectronics and Optoelectronics, 2011
We give an overview on the self-assembly and optical properties of strain-free semiconductor quantum rings (QRs) generated by the novel technique local droplet etching (LDE). LDE is fully compatible with conventional molecular beam epitaxy equipment and utilizes liquid metallic droplets which perform a spatially limited drilling and form nanovolcanoes ...
Ch. Heyn, A. Stemmann, Ch. Strelow, T. Köppen, D. Sonnenberg, A. Graf, S. Mendach, W. Hansen   +7 more
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Experimental study of nanoholes formation using local droplet etching of fib-modified GaAs (001) surface

2022
In this work, we study of the effect of focused ion beam (FIB) and pre-growth treatment based on local droplet etching (LDE) techniques combination on the regular nanohole array formation on GaAs(001) surface, which can act as template for selective quantum dot formation in future.
Chernenko, Natalia, Kirichenko, Danil, Shandyba, Nikita, Balakirev, Sergey, Eremenko, Michael, Solodovnik, Maxim   +5 more
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Nanohole formation on AlGaAs surfaces by local droplet etching with gallium

Journal of Crystal Growth, 2009
; A1. Atomic force microscopy ; A1. Diffusion ; A1. Low-dimensional structures ; A3. Molecular beam epitaxy ; B2. Semiconducting III-V materials We demonstrate the self-assembled generation of nanoholes on AlGaAs surfaces by local droplet etching (LDE).
Ch. Heyn, A. Stemmann, W. Hansen
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Kinetic model of local droplet etching

Physical Review B, 2011
The self-organized in situ drilling of nanoholes into semiconductor surfaces by using liquid metallic droplets during conventional molecular beam epitaxy represents a new degree of freedom for the design of heterostructure devices. A model of this local droplet etching is presented that is based on a core-shell droplet structure.
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Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots

2023
В работе представлены результаты экспериментальных исследований процессов локального травления поверхности GaAs(001) каплями Ga при различных технологических режимах. Впервые на поверхности GaAs с ориентацией (001) получены симметричные наноуглубления пирамидальной формы с низкой поверхностной плотностью (~1·10^8 см^-2 и ниже), позволяющие обеспечить ...
Lakhina, Ekaterina, Shandyba, Nikita, Chernenko, Natalia, Kirichenko, Danil, Balakirev, Sergey, Solodovnik, Maxim   +5 more
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Local droplet etching – Nanoholes, quantum dots, and air-gap heterostructures

AIP Conference Proceedings, 2014
Local droplet etching (LDE) allows the self-organized generation of nanoholes in semiconductor surfaces and is fully compatible with molecular beam epitaxy (MBE). The influence of the process parameters as well as of droplet and substrate materials on the LDE nanohole morphology is discussed.
Ch. Heyn, D. Sonnenberg, A. Graf, J. Kerbst, A. Stemmann, W. Hansen   +5 more
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Local etching of nanoholes and quantum rings with InxGa1−x droplets

Journal of Applied Physics, 2009
We study the formation of nanoholes and quantum rings in GaAs and AlGaAs surfaces by local droplet etching with InxGa1−x. The rings are crystallized from droplet material and surround the nanohole openings. In particular, the influence of the In content x on density, diameter, and depth of the nanoholes is investigated.
A. Stemmann, T. Köppen, M. Grave, S. Wildfang, S. Mendach, W. Hansen, Ch. Heyn   +6 more
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Density limits of high temperature and multiple local droplet etching on AlAs

Journal of Crystal Growth, 2014
Abstract The density of nanoholes created by self-assembled Al droplet etching of AlAs surfaces during molecular beam epitaxy is studied. We find a clear decrease of the hole density with increasing etching temperature T up to a threshold temperature T = 620 ° C . At T > 620 ° C , the hole density saturates at a minimum of 2 ×
J. Kerbst, Ch. Heyn, T. Slobodskyy, W. Hansen   +3 more
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Local droplet etching of nanoholes and rings on GaAs and AlGaAs surfaces

Applied Physics Letters, 2008
We study the formation of nanoholes and rings on GaAs and AlGaAs surfaces by local droplet etching (LDE) with gallium and indium. The nanohole properties are tuned by variation in etching temperature and time as well as by the etchant. Nanoholes fabricated by In LDE are larger and have an about ten times lower density compared to Ga LDE, which allows ...
A. Stemmann, Ch. Heyn, T. Köppen, T. Kipp, W. Hansen   +4 more
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