Results 141 to 150 of about 248 (168)
Advanced Electronic Materials, EarlyView.Using C‐AFM, W/HZO/p‐Ge capacitors with areas down to 0.26 µm2 are investigated. Frequency‐dependent voltage ramps reveal switching currents that confirm complete polarization reversal across the entire electrode area, while PUND enables reconstruction of P–V loops.
Lucian Trupina +10 more
wiley +1 more source
Kinetic model of local droplet etching
Physical Review B, 2011 The self-organized in situ drilling of nanoholes into semiconductor surfaces by using liquid metallic droplets during conventional molecular beam epitaxy represents a new degree of freedom for the design of heterostructure devices. A model of this local droplet etching is presented that is based on a core-shell droplet structure.
Ch Heyn
exaly +3 more sources
Self-Assembly of Semiconductor Quantum Rings by Local Droplet Etching
Journal of Nanoelectronics and Optoelectronics, 2011 We give an overview on the self-assembly and optical properties of strain-free semiconductor quantum rings (QRs) generated by the novel technique local droplet etching (LDE). LDE is fully compatible with conventional molecular beam epitaxy equipment and utilizes liquid metallic droplets which perform a spatially limited drilling and form nanovolcanoes ...
Ch Heyn
exaly +3 more sources
Alloying during local droplet etching of AlGaAs surfaces with aluminium
Journal of Applied Physics, 2019 Local droplet etching (LDE) drills self-assembled nanoholes into AlGaAs surfaces and represents a powerful technique for the fabrication of versatile quantum structures like quantum dots, rings, and molecules. Usually, LDE is performed at temperatures T=600−680°C if Al is used as the etching material.
Ch Heyn, Heyn Ch, Hansen W
exaly +3 more sources
Local droplet etching of nanoholes and rings on GaAs and AlGaAs surfaces
Applied Physics Letters, 2008 We study the formation of nanoholes and rings on GaAs and AlGaAs surfaces by local droplet etching (LDE) with gallium and indium. The nanohole properties are tuned by variation in etching temperature and time as well as by the etchant. Nanoholes fabricated by In LDE are larger and have an about ten times lower density compared to Ga LDE, which allows ...
A Stemmann, Ch Heyn, T Kipp
exaly +3 more sources
Scaling of the structural characteristics of nanoholes created by local droplet etching
Journal of Applied Physics, 2014 We study the tuneability of nanoholes created by local droplet etching of AlGaAs surfaces with Al droplets at varied coverage θ of the deposited droplet material and process temperature T. For the contact angle of the as-grown droplets a mean value of 66° is determined, which depends neither on θ nor on T.
Ch Heyn, Heyn Ch, Hansen W
exaly +3 more sources
Influence of Ga coverage and As pressure on local droplet etching of nanoholes and quantum rings
Journal of Applied Physics, 2009 We study the formation of nanoholes and quantum rings in GaAs and AlGaAs surfaces by local droplet etching (LDE) with Ga and In. The quantum rings are formed by the droplet etching process and surround the nanohole openings. Our data show that a low As pressure is essential for LDE and that process conditions with high Ga coverage yield formation of ...
Ch Heyn, A Stemmann, Heyn Ch
exaly +3 more sources
Mechanism and applications of local droplet etching
Journal of Crystal Growth, 2011 We give an overview on the fabrication and applications of deep nanoholes in semiconductor surfaces generated by self-assembled drilling with liquid metal droplets as etchant. The method is fully compatible with conventional molecular beam epitaxy equipment.
Ch. Heyn +6 more
openaire +2 more sources
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Nanohole formation on AlGaAs surfaces by local droplet etching with gallium
Journal of Crystal Growth, 2009; A1. Atomic force microscopy ; A1. Diffusion ; A1. Low-dimensional structures ; A3. Molecular beam epitaxy ; B2. Semiconducting III-V materials We demonstrate the self-assembled generation of nanoholes on AlGaAs surfaces by local droplet etching (LDE).
Ch Heyn, A Stemmann
exaly +2 more sources
Density limits of high temperature and multiple local droplet etching on AlAs
Journal of Crystal Growth, 2014Abstract The density of nanoholes created by self-assembled Al droplet etching of AlAs surfaces during molecular beam epitaxy is studied. We find a clear decrease of the hole density with increasing etching temperature T up to a threshold temperature T = 620 ° C . At T > 620 ° C , the hole density saturates at a minimum of 2 ×
Ch Heyn, T Slobodskyy
exaly +2 more sources