Kinetic calculation analysis of Ga deposition on the morphology evolution of GaAs quantum ring
Materials Research Express, 2021 GaAs Quantum Ring (QR) was gained on GaAs (001) by Droplet Epitaxy (DE), and the microscopic morphology of the GaAs samples was observed by Scanning Tunnel Microscope (STM).
Qi-Zhi Lang +3 more
doaj +1 more source
AIP Advances, 2023 We present the fabrication of strain-free quantum dots in the In0.53Ga0.47As/In0.52Al0.48As-system lattice matched to InP, as future sources for single and entangled photons for long-haul fiber-based quantum communication in the optical C-band.
D. Deutsch +4 more
doaj +1 more source
The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface [PDF]
, 2010 In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the ...
A. A. Lyamkina +5 more
core +1 more source
Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si [PDF]
, 2016 Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates.
Dubrovskii, Vladimir G. +8 more
core +2 more sources
Digital microfluidics with pressure-based actuation [PDF]
, 2013 One of the key issues in biosensors is the time it takes for biomolecules in a solution to reach and bind to the sensor surface (particularly in low-concentration analytes).
Bienstman, Peter, Hallynck, Elewout
core +2 more sources
Thermally controlled widening of droplet etched nanoholes [PDF]
, 2014 We describe a method to control the shape of nanoholes in GaAs (001) which combines the technique of local droplet etching using Ga droplets with long-time thermal annealing.
Hansen, Wolfgang +3 more
core +3 more sources
Congruent evaporation temperature of molecular beam epitaxy grown GaAs (001) determined by local droplet etching [PDF]
Applied Physics Letters, 2015 The congruent evaporation temperature Tc of GaAs (001) is critical for many technological processes and is fundamental to the control and stability of Ga droplets for quantum structure fabrication. We apply the technique of local droplet etching (LDE) to measure Tc for technologically important molecular beam epitaxy (MBE) grown GaAs (001).
Heyn, Ch., Jesson, D. E.
openaire +1 more source
Surface Engineering for Phase Change Heat Transfer: A Review [PDF]
, 2014 Among numerous challenges to meet the rising global energy demand in a sustainable manner, improving phase change heat transfer has been at the forefront of engineering research for decades.
Attinger, Daniel +7 more
core +4 more sources
Synthesis and systematic optical investigation of selective area droplet epitaxy of InAs/InP quantum dots assisted by block copolymer lithography [PDF]
, 2018 We report on the systematic investigation of the optical properties of a selectively grown quantum dot gain material assisted by block-copolymer lithography for potential applications in active optical devices operating in the wavelength range around 1 ...
Aldmal, Kristoffer +8 more
core +2 more sources
Solid-state ensemble of highly entangled photon sources at rubidium atomic transitions [PDF]
, 2016 Semiconductor InAs/GaAs quantum dots grown by the Stranski-Krastanov method are among the leading candidates for the deterministic generation of polarization entangled photon pairs.
Chen, Yan +6 more
core +3 more sources