Results 191 to 200 of about 1,405,029 (363)

A Logic Gate Based on a Flexible Metal-Organic Framework (JUK-8) for the Concomitant Detection of Hydrogen and Oxygen. [PDF]

Chemistry, 2022
Roztocki K, Bon V, Senkovska I, Matoga D, Kaskel S.   +4 more
europepmc   +1 more source

Freely Selective Analog and Digital Resistive Switching Behavior of In2Se3 Devices for Storage and Neuromorphic Applications

Advanced Electronic Materials, EarlyView.
By designing a four‐terminal α‐In2Se3 device, freely selective digital and analog resistive switching behavior is achieved. The oxygen plasma and gate modulation terminal enable optimized non‐volatile digital storage with low operating voltage, artificial synapses with high linearity, and dynamic range based on 128‐level analog conductance behavior ...
Siying Tian, Changhao Wang, Yuanjie Wang, Honghao Wang, Chenxi Gao, Weisen Hu, Jia Wei, Fengling Chen, Dapeng Sun, Xu Zheng, Chaobo Li, Chujun Yin   +11 more
wiley   +1 more source

Logic gates using high Rydberg states

, 2001
F. Remacle, E. W. Schlag, H. L. Selzle, K. L. Kompa, U. Even, R. D. Levine   +5 more
openalex   +1 more source

Steep‐Slope IGZO Transistor Monolithically Integrated with Initialization‐Free Ag/Ti/Hf0.8Zr0.2O2 Atomic Threshold Switch

Advanced Electronic Materials, EarlyView.
In this study, a steep‐slope In‐Ga‐Zn‐O (IGZO) field‐effect transistor (FET) integrated with an Ag/Ti/Hf0.8Zr0.2O2 atomic threshold switch (ATS) is presented. This device achieves sub‐60 mV dec−1 switching, combining low‐voltage ATS switching with IGZO FETs for low power applications.
Junmo Park, Hanggyo Jung, Deokjoon Eom, Heesoo Lee, Hyunhee Kim, Yonghoon Kim, Jongwook Jeon, Hyoungsub Kim   +7 more
wiley   +1 more source

Development of dual enzyme responsive molecular AND logic gate. [PDF]

Turk J Chem, 2022
Erbaş Çakmak S.
europepmc   +1 more source

Reconfigurable Mixed‐Dimensional Transistor With Semimetal CNT Contacts

Advanced Electronic Materials, EarlyView.
The semimetal carbon nanotubes (CNT) contacts are used to fabricate reconfigurable WSe2 transistors for the first time, which have excellent electrical performance with a high on/off ratio of over 107 as a field effect transistor (FET) and an ultra‐high rectification ratio of over 106 as a diode.
Xuanzhang Li, Yuheng Li, Zhen Mei, Liang Liang, Qunqing Li, Shoushan Fan, Yang Wei   +6 more
wiley   +1 more source

Numerical simulation of quantum logic gates based on quantum wires [PDF]

, 2002
Andrea Bertoni, Paolo Bordone, R. Brunetti, Carlo Jacoboni, Susanna Reggiani   +4 more
openalex   +1 more source

A shuttling-based two-qubit logic gate for linking distant silicon quantum processors. [PDF]

Nat Commun, 2022
Noiri A, Takeda K, Nakajima T, Kobayashi T, Sammak A, Scappucci G, Tarucha S.   +6 more
europepmc   +1 more source

Monolithic 3D Logic Gates Based on p‐Te and n‐Bi2S3 Complementary Thin‐Film Transistors

Advanced Electronic Materials, EarlyView.
A method for preparing M3D circuits based on an in situ synthesis process is presented. Through thermal evaporation, followed by a low‐temperature treatment, p‐Te, and n‐Bi2S3 channel materials are easily synthesized. The excellent uniformity enables the fabrication of logic gates beyond inverters.
Yuqia Ran, Yiwen Song, Long Li, Xujin Song, Pingfan Gu, Qi Wang, Haifeng Du, Jinfeng Kang, Yu Ye   +8 more
wiley   +1 more source

Ability as legitimation of tracking: Teachers' representations of students in vocational and academic tracks

British Educational Research Journal, Volume 48, Issue 6, Page 1049-1064, December 2022., 2022
Abstract The division of educational systems into different tracks—academic and vocational—represents one of the key elements in explaining social stratification and inequalities. Previous research identifies teachers' expectations as a critical factor to understand the relationship between tracking and social inequality.
Aina Tarabini, Marta Curran, Alba Castejón   +2 more
wiley   +1 more source