Results 111 to 120 of about 136,493 (299)

Analog-Digital Partitioning for Low-Power UWB Impulse Radios under CMOS Scaling

EURASIP Journal on Wireless Communications and Networking, 2006
Ultra-wideband (UWB) impulse radios show strong advantages for the implementation of low-power transceivers. In this paper, we analyze the impact of CMOS technology scaling on power consumption of UWB impulse radios.
Desset Claude, Ryckaert Julien, De Heyn Vincent, Van der Plas Geert, Wambacq Piet, Van Poucke Bart, Badaroglu Mustafa   +6 more
doaj  

Decoupling Dynamics and Crosslink Stability in Supramolecular Hydrogels Using Associative Exchange

Advanced Materials, EarlyView.
How does reorganization impact the stability of supramolecular hydrogels? In contrast to dissociative crosslink exchange, implementing associative exchange in macroscale DNA hydrogels enables decoupling of reorganization dynamics from thermal and mechanical stability.
Pierre Le Bourdonnec, Charafeddine Ferkous, Léo Comunale, Luca Cipelletti, Rémi Merindol   +4 more
wiley   +1 more source

Low-power low-voltage chopped transconductance amplifier for noise and offset reduction [PDF]

, 1997
This paper describes the principle and design of a CMOS low-power, low-voltage, chopped transconductance amplifier, for noise and offset reduction in mixed analogue digital applications. The operation is based on chopping and dynamic element matching, to
Nauta, B., Sanduleanu, M.A.T., Wallinga, H.   +2 more
core   +1 more source

Coupling Nanostructured Plasmon–Strain Microwave Waveguide to Spin Defects in Hexagonal Boron Nitride for High‐Sensitivity Quantum Sensors

Advanced Materials, EarlyView.
Coupling of spin‐active VB−$V_B^ - $ defects in hBN with alumina‐coated gold plasmonic nanoresonators (PNRs), integrated into a microwave‐efficient waveguide, constitutes a plasmon‐strain architecture that enhances their photoluminescence and spin contrast. This platform enables a tenfold quantum yield improvement and achieves a DC magnetic sensitivity
Naveed Hussain, Sumukh Vaidya, Saakshi Dikshit, Shahriar Esmaeili, Paul Schmalenberg, Hayate Yamano, Katsunori Danno, Biswajit Sahoo, Shougo Higashi, Ercan M. Dede, Tongcang Li, Debasish Banerjee, Songtao Wu   +12 more
wiley   +1 more source

Design of low-power 2FSK demodulation circuit

MATEC Web of Conferences, 2018
Aiming at the complex structure and high power consumption of the existing 2FSK demodulation circuit, this paper designs a simple structure and low power 2FSK demodulation circuit.
Liu Guo Feng, Liu Xi, Tian Xing Guo
doaj   +1 more source

Low Power CMOS-Based Hall Sensor with Simple Structure Using Double-Sampling Delta-Sigma ADC. [PDF]

Sensors (Basel), 2020
Lee J, Oh Y, Oh S, Chae H.
europepmc   +1 more source

Arm‐Length‐Controlled CsPbBr3 Nanocrystals for Tunable Optical and Assembly Behavior

Advanced Materials, EarlyView.
In this work, the synthesis parameters that dictate the formation of armed CsPbBr3 nanocrystals are described, and routes enabling precise control over arm length are proposed. Direct links between morphology and optoelectronic behavior are established.
Irina Skvortsova, Sudipta Seth, Juliette Zito, Robin Girod, Bob Van Hout, Annick De Backer, Tom Stoops, Sergey Abakumov, Evgenii Vlasov, Tejmani Behera, Sandra Van Aert, Elke Debroye, Johan Hofkens, Sara Bals   +13 more
wiley   +1 more source

Scalable on-chip multiplexing of silicon single and double quantum dots

Communications Physics
Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers. For this goal,
Heorhii Bohuslavskyi, Alberto Ronzani, Joel Hätinen, Arto Rantala, Andrey Shchepetov, Panu Koppinen, Janne S. Lehtinen, Mika Prunnila   +7 more
doaj   +1 more source

A 6-Transistor Ultra-Low Power CMOS Voltage Reference with 0.02%/V Line Sensitivity. [PDF]

Proc Cust Integr Circuits Conf, 2020
Bialek H, Johnston ML, Natarajan A.
europepmc   +1 more source

High‐Gain Ag2Te/MoS2 Hybrid Photodetectors for Short‐Wave Infrared Imaging

Advanced Materials, EarlyView.
A precision‐engineered short‐wave infrared image sensor based on a 0D/2D Ag2Te/MoS2 hybrid structure is demonstrated in this work. The device exploits photodoping at the nanoscale interface to achieve broadband detection from visible to infrared wavelengths with high responsivity and fast response.
Seock‐Jin Jeong, Hyun Woo Ko, Suyeon Jo, Joicy Selvaraj, Jung‐Min Kim, Namji Lee, Jae‐Hyeon Ahn, Hyeonchae Lee, Seungmin Jeong, Heedae Kim, Paul Hongsuck Seo, Jae Won Shim, Yonghun Kim, Hyun‐Soo Ra, Min‐Chul Park, Jong‐Soo Lee   +15 more
wiley   +1 more source