Results 41 to 50 of about 22,126 (267)

CMOS Low-Power Optical Transceiver for Short Reach

Micromachines
The emergence of the AI era driven by Large Language Models (LLMs) and the next-generation high-definition multimedia interface for immersive technologies (AR/VR/metaverse) have created an unprecedented demand for high-bandwidth interconnects.
Ruixuan Yang, Yiming Dang, Jinhao Chen, Dan Li, Francesco Svelto   +4 more
doaj   +1 more source

Analysis of Dynamic Differential Swing Limited Logic for Low-Power Secure Applications

Journal of Low Power Electronics and Applications, 2012
Low-power secure applications such as Radio Frequency IDentification (RFID) and smart cards represent extremely constrained environments in terms of power consumption and die area. This paper investigates the power, delay and security performances of the
Denis Flandre, Dina Kamel, Mathieu Renauld, David Bol, François-Xavier Standaert   +4 more
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Low‐power hybrid memristor‐CMOS spiking neuromorphic STDP learning system

IET Circuits, Devices and Systems, 2021
An electronic circuit that implements a neural network architecture with spike neurons was studied, proposed, and evaluated, primarily considering energy consumption.
Gabriel Maranhão, Janaina Gonçalves Guimarães   +1 more
doaj   +1 more source

A Fully Integrated High Efficiency 2.4 GHz CMOS Power Amplifier with Mode Switching Scheme for WLAN Applications

Applied Sciences, 2023
A 3.3 V mode-switching RF CMOS power amplifier (PA) for WLAN applications is presented, which is integrated into a 55-nm bulk CMOS process. The proposed PA offers both static control and dynamic power control, allowing it to operate efficiently in both ...
Haoyu Shen, Taishan Mo, Bin Wu
doaj   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg, Thomas W. Pfeifer, Chuanzhen Zhou, Yong Kyu Choi, Duk‐Hyun Choe, Patrick E. Hopkins, Jon F. Ihlefeld   +6 more
wiley   +1 more source

Monolithic integration of p- and n-type doped 2D WSe2 for wafer-scale complementary logic circuits

Nature Communications
Atomically thin two-dimensional (2D) semiconductors are promising candidates for next-generation electronics, which could effectively suppress short-channel effects and consequently reduce static power consumption.
Yan Hu, Shicheng Zeng, Yi Wang, Jinshu Zhang, Yuxuan Zhu, Zhejia Zhang, Xiangqi Dong, Qicheng Sun, Mingrui Ao, Xinlong Guo, Jieya Shang, Yuexi Wang, Chao Liu, Yuchen Tian, Haojie Chen, Xinliu He, Yufei Song, Yue Zhang, Sen Wang, Junlong Shi, Zhengjie Sun, Jiahao Wang, Jichao Li, Liping Jiang, Lin Wang, Chao Zhu, Zihan Xu, Saifei Gou, Yin Wang, Yin Xia, Xu Wang, Zhengzong Sun, Wenzhong Bao   +32 more
doaj   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Advanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source