Design of an integrated low-noise read-out system for DNA capacitive sensors
Microelectronics Journal, 2009This paper presents an electronic system for a fast DNA label-less detection. The sensitivity of the capacitive sensor in use is improved by depositing an insulating self-assembled monolayer (SAM) over the golden electrodes. The capacitance shift due to the hybridization effect is monitored by means of a charge-sensitive amplifier and digitalized by ...
D. De Venuto, S. Carrara, RICCO', BRUNO
openaire +2 more sources
Low-noise laser diode (0.78 μm) for video disk reading
Conference on Lasers and Electro-Optics, 1982Various types of visible laser diode have been reported as light sources for optical disk reading, such as audio and video disks. However, among them single-longitudinal-mode lasers need special means, such as super imposing (radio) high frequency on the bias current for applications in video disk reading, which requires about a 30-dB higher SNR than ...
Shoichi Kakimoto +6 more
openaire +1 more source
Design of an integrated low-noise read-out system for DNA capacitive sensors
2007 2nd International Workshop on Advances in Sensors and Interface, 2007This paper describes an integrated solution for an accurate DNA label-free detection. The sensor considered is capacitive and constists of two golden electrodes. A known DNA strands (probe) is immobilized over them and a capacitive shift occurs in presence of a complementary sequence inside the solution.
Daniela De Venuto +2 more
openaire +1 more source
A Novel Driver less SRAM with Indirect Read for Low Energy Consumption and Read Noise Elimination
2019 Devices for Integrated Circuit (DevIC), 2019The modern electronics gadget has influenced tremendously every aspects of life. The demand to add more and more functionality has forced to increase the performance of the processor. To ensure a robust data supply to the processor a high performance, stable and low power SRAM is also of utmost necessity.
Debasish Nayak +7 more
openaire +1 more source
A compact and low-power SRAM with improved read static noise margin
2008 15th IEEE International Conference on Electronics, Circuits and Systems, 2008An efficient static random access memory (SRAM) is presented in this paper. By using a newly developed architecture based on ldquopreequalizerdquo scheme, the geometry ratio between the pull-up and pull-down driver transistors of conventional 6-T cell will be similar to that of familiar inverter, thereby making the SRAM be provided with an improved ...
null Cihun-Siyong Alex Gong +4 more
openaire +1 more source
Fabry-Perot resonator with interferometric read-out for low noise applications
Proceedings of the 1999 Joint Meeting of the European Frequency and Time Forum and the IEEE International Frequency Control Symposium (Cat. No.99CH36313), 2000New readout configurations for a Fabry-Perot (FP) resonator (or frequency discriminator) that combine the reflected and transmitted waves are analyzed in detail. The waves may be combined in a Sagnac (S) or Mach-Zehnder (MZ) configuration and tuned to a dark port (DP) to suppress the carrier frequency.
openaire +2 more sources
Extremely low count detection for EELS spectrum imaging by reducing CCD read-out noise
Ultramicroscopy, 2019Extremely low count detection for EELS spectrum imaging is required to overcome problems with electron irradiation and widen the range of available applications. We have made a systematic statistical study of the reduction of CCD noise for EELS. We propose a calculation method to estimate the properties of noise and a procedure to reduce it.
Mitsutaka, Haruta +5 more
openaire +2 more sources
Introducing 65 nm CMOS technology in low-noise read-out of semiconductor detectors
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2010The large scale of integration provided by CMOS processes with minimum feature size in the 100 nm range, makes them very attractive in the design of front-end electronics for highly pixelated detectors, where several functions need to be packed inside a relatively small silicon area.
Manghisoni, Massimo +4 more
openaire +2 more sources
Impact of low-frequency noise on read distributions of resistive switching memory (RRAM)
2014 IEEE International Electron Devices Meeting, 2014Resistive switching memory (RRAM) is one of the most promising emerging device technology for future storage and computing memories. As other emerging memories based on materials storage at the nanoscale, RRAM is affected by switching and read fluctuations. We addressed current fluctuation in RRAM at both cell and array levels.
AMBROGIO, STEFANO +4 more
openaire +1 more source
An Ultra-Low Noise Superconducting Antenna-Coupled Microbolometer With a Room-Temperature Read-Out
IEEE Microwave and Wireless Components Letters, 2006In this letter, we report the electrical and optical characteristics of a superconducting vacuum-bridge microbolometer with an electrical noise equivalent power of 26fW radicHz and an effective time constant of 380 ns, when operated at a bath temperature of 4K.
A. Luukanen +6 more
openaire +1 more source

