Results 261 to 270 of about 934,200 (296)

A low power low noise amplifier for a 128 channel detector read-out chip

IEEE Transactions on Nuclear Science, 1989
The design of a low-power, low-noise CMOS (complementary metal oxide semiconductor) amplifier is described. The amplifier was designed using the folded cascode configuration and was implemented on a 3- mu m double polysilicon process. The amplifier is part of a 128-channel charge amplifier array chip for use in the readout of radiation detectors with ...
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Methods for direct-reading noise measurements of low-gain two-ports

IEEE Transactions on Instrumentation and Measurement, 1994
This paper describes direct-reading measurement methods of noise figure F/sub m/ displayed by an automatic noise figure indicator. The F/sub m/ readings should be equal to F/sub x/, which are the true noise figure values of the two-port under test, regardless of its available power gain G/sub Ax/, and the noise figure of the measurement receiver F/sub ...
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A low noise CMOS image sensor read-out circuit based on VCO and frequency counter

2009 3rd International Conference on Anti-counterfeiting, Security, and Identification in Communication, 2009
A novel low noise read-out circuit for CMOS image sensor is proposed, based on VCO and frequency counter. By such a technique, the output voltage of the selected pixel is as a voltage bias to control the frequency of the oscillator. As a result, the oscillation frequency is a function of the photocurrent.
null Jianguo Tang, null Fang Tang
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Read-out Circuit Analysis for High-speed Low-noise VCO Based APS CMOS Image Sensor

2010 Fifth IEEE International Symposium on Electronic Design, Test & Applications, 2010
A detailed read-out circuit analysis of the VCO based APS CMOS image sensor is presented in this paper. According to the mathematic analysis and simulation results, the read-out speed should be decreased when reducing the bias current. Moreover, the feature of the device gain factor and the source follower's threshold voltage are vestigated, showing ...
Fang Tang, Amine Bermak
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A Low Noise Read-Out IC with Gate Driver for Full Front Display Area Optical Fingerprint Sensors

2020 IEEE Symposium on VLSI Circuits, 2020
It is presented the first read-out IC (ROIC) for a TFT-based full-screen optical fingerprint (FP) sensor placed under the OLED display. The ROIC supports both the fast-scan mode to acquire 256×256 pixels FP image in anywhere on the display, and the full-scan mode to acquire a full-screen FP image (2,560×1,280 pixels).
Y. Kwon, M. Kim, S. Park, M. Jeong, S. M. Lee, S. H. Lee, W. H. Lee, Y. K. Choi, J. Y. Lee   +8 more
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Improved dc SQUID read-out electronics with low 1/f noise preamplifier

Review of Scientific Instruments, 1997
An improved read-out electronics without flux modulation for dc superconducting quantum interference devices (dc SQUIDs) is presented where the preamplifier is directly coupled to the SQUID. Compared to our previous designs, the 1/f voltage and current noise levels of the preamplifier were reduced by about a factor of 4 (rms) by using bipolar matched ...
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Development of low read noise high conversion gain CMOS image sensor for photon counting level imaging

SPIE Proceedings, 2016
A CMOS image sensor with deep sub-electron read noise and high pixel conversion gain has been developed. Its performance is recognized through image outputs from an area image sensor, confirming the capability of photoelectroncounting- level imaging.
Min-Woong Seo, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi   +3 more
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64-channels low noise FPGA read-out electronics for segmented MA-PMT with High Quantum efficiency

Nuclear Physics B - Proceedings Supplements, 2011
The aim of this work is to present a 64-independent channels, low noise and wide dynamic range readout system for multi-anodes photo-multiplier tubes (MA-PMTs). The results consist of some imaging tests obtained with a Hamamatsu H8500 MA-PMT coupled to different scintillation crystals, like a LaBr3(Ce) continuous crystal and NaI(Tl), CsI(Tl) and YAP ...
FABBRI, ANDREA, F. D. Notaristefani, V. O. Cencelli, P. Bennati, CINTI, Maria Nerina, F. Petulla, PELLEGRINI, Rosanna, T. Baroncelli, G. Moschini, F. Navarria, PANI, Roberto   +10 more
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Ultra-Low Power Sub-threshold SRAM Cell Design to Improve Read Static Noise Margin

2012
Sub-threshold circuit design is a prevalent selection for ultra-low power (ULP) systems. Static random access memory (SRAM) is an important component in these systems therefore ultra-low power SRAM has become popular. Operation of standard 6T SRAM at sub or near-threshold voltages is unfeasible, predominantly due to degraded static noise margin (SNM ...
Chandrabhan Kushwah, Santosh K. Vishvakarma   +1 more
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Microscopic origin of read current noise in TaOx-based resistive switching memory by ultra-low temperature measurement

Applied Physics Letters, 2016
TaOx-based resistive random access memory (RRAM) attracts considerable attention for the development of next generation nonvolatile memories. However, read current noise in RRAM is one of the critical concerns for storage application, and its microscopic origin is still under debate.
Yue Pan, Yimao Cai, Yefan Liu, Yichen Fang, Muxi Yu, Shenghu Tan, Ru Huang   +6 more
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