Results 271 to 280 of about 934,200 (296)

A 9-shared 3x3 Nonacell Image Sensor with 0.64μm unit pixels for Read Noise and Low-illuminance SNR enhancement

2023
A 0.64 μm pitch 108 mega pixels CMOS image sensor has been demonstrated and the advanced nonacell structure is used to maximize low-light performance. In this work, a new 9 charge-sum (9S) method is employed, and operation method and parameters for determining signal to noise ratio (SNR) are compared with the conventional 3 charge-sum 3 voltage-average
Wonchul Choi, Munhwan Kim, Junoh Kim, Junho Seok, Younguk Song, Dukseo Park, Hyeonseop Yoo, Minyoung Jung, Jieun Lee, Juha Kim, Heegeun Jeong, Kyungho Lee, Eunsang Cho, Howoo Park, Bumsuk Kim, Kyungmin Koh, Sangil Jung, Jungchak Ahn, Joonseo Yim   +18 more
openaire   +1 more source

A Low Noise 32-Channel CMOS Read-Out Circuit for X-ray Silicon Drift Chamber Detectors

2011
In this paper we present a 32-channel integrated front-end circuit for low-energy (0.5–100 keV) X-ray detection with a multi-anode silicon drift detector. The front-end circuit includes 32 read-out pixel cells (RPC), each consisting of a low noise preamplifier, a second-order RC-CR pulse shaper, a peak stretcher, an amplitude and a peak discriminator ...
PICOLLI, LUCA ATTILIO, GRASSI, MARCO, FERRI, MASSIMO, MALCOVATI, PIERO   +3 more
openaire   +2 more sources

Impact of P/E cycling on read current fluctuation of NOR Flash memory cell: A microscopic perspective based on low frequency noise analysis

2015 IEEE International Reliability Physics Symposium, 2015
The impact of program/erase (P/E) cycling on the read current fluctuation of 65nm NOR Flash memories is studied in detail. Random telegraph noise (RTN) and 1/f noise analysis are employed to characterize the process induced trap (PIT) and the stress induced trap (SIT) in the tunnel oxide of the floating gate memory cells.
Xiaonan Yang, Jing Liu, Zhiwei Zheng, Yan Wang, Dandan Jiang, Shengfen Chiu, Hanming Wu, Ming Liu   +7 more
openaire   +1 more source

Effect of stripe height on the critical current density of spin-torque noise in a tunneling magnetoresistive read head with a low resistance area product below 1.0 Ω μm2

Journal of Applied Physics, 2015
To understand the spin-torque effect on the noise in tunneling magnetoresistive (TMR) read heads, the GHz range noise spectra of TMR read heads with a narrow track width (w = 36 nm), and various stripe heights (h) are investigated as a function of the external magnetic field (Hex) and dc bias current density (j). The strong noise peak intensity depends
Yasushi Endo, Peng Fan, Masahiro Yamaguchi   +2 more
openaire   +1 more source

Low-frequency noise in downscaled silicon transistors: Trends, theory and practice

Physics Reports, 2022
Prof. M. Jamal Deen, O Marinov
exaly  

X-ray speed reading with the MCRC: a low noise CCD readout ASIC enabling readout speeds of 5 Mpixel/s/channel

X-Ray, Optical, and Infrared Detectors for Astronomy X, 2022
Peter Orel, Sven Herrmann, Tanmoy Chattopadhyay, Glenn Morris, Steven W. Allen, Gregory Y. Prigozhin, Richard Foster, Andrew Malonis, Marshall W. Bautz, Michael J. Cooper, Kevan Donlon   +10 more
openaire   +1 more source

Quanta Image Sensor Jot With Sub 0.3e- r.m.s. Read Noise and Photon Counting Capability

IEEE Electron Device Letters, 2015
Jiaju, Eric R Fossum
exaly  

Low-frequency 1/f noise in graphene devices

Nature Nanotechnology, 2013
Alexander A Balandin
exaly  

A read-static-noise-margin-free SRAM cell for low-V/sub dd/ and high-speed applications

ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005., 2005
K. Takeda, Y. Hagihara, Y. Aimoto, M. Nomura, Y. Nakazawa, T. Ishii, H. Kobatake   +6 more
openaire   +1 more source

A 0.27e-rms Read Noise 220-μV/e-Conversion Gain Reset-Gate-Less CMOS Image Sensor With 0.11-μm CIS Process

IEEE Electron Device Letters, 2015
Min-Woong Seo, Shoji Kawahito, Keiichiro Kagawa   +2 more
exaly