Results 191 to 200 of about 124,327 (319)

ReRAM/CMOS Array Integration and Characterization via Design of Experiments

Advanced Electronic Materials, EarlyView.
This paper proposes the Design of Experiments to characterize arrays of oxide‐based ReRAM devices by exploring the large characterization space efficiently using only a few numbers of experiments. Using in‐house integration of 20 000 ReRAM devices on a CMOS chip, the unconventional optimization approach determines optimized measurement parameters and ...
Imtiaz Hossen, William A. Borders, Advait Madhavan, Shweta Joshi, Patrick M. Braganca, Jabez J. McClelland, Brian D. Hoskins, Gina C. Adam   +7 more
wiley   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Machine learning for the development of new materials for a magnetic tunnel junction. [PDF]

Npj Spintron
Hirohata A, Koizumi H, Roy T, Tsujikawa M, Mizukami S, Nawa K, Shirai M.   +6 more
europepmc   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
wiley   +1 more source

Effect of Dzyaloshinskii Moriya interaction on magnetic tunnel junction based molecular spintronics devices (MTJMSD). [PDF]

Sci Rep
Sankhi BR, D'Angelo C, Thompson D, Tyagi P.   +3 more
europepmc   +1 more source

Concealable and Field‐Free Physical Unclonable Function Based on Voltage‐Controlled Magnetic Tunnel Junctions

Advanced Electronic Materials, EarlyView.
A concealable physical unclonable function (PUF) based on an array of 384 nanoscale voltage‐controlled magnetic tunnel junctions is demonstrated. The PUF operates without any external magnetic field. It uses a combination of deterministic and stochastic switching mechanisms, based on the spin transfer torque and voltage‐controlled magnetic anisotropy ...
Thomas Neuner, Jaimin Kang, Jordan Athas, Christian Duffee, Noraica Davila Melendez, Jordan A. Katine, Pedram Khalili Amiri   +6 more
wiley   +1 more source

AI-guided framework for the design of materials and devices for magnetic-tunnel-junction-based true random number generators. [PDF]

Commun Eng
Patel KP, Maicke A, Arzate J, Kwon J, Smith JD, Aimone JB, Incorvia JAC, Cardwell SG, Schuman CD.   +8 more
europepmc   +1 more source

Exploring room-temperature transport of single-molecule magnet-based molecular spintronics devices using the magnetic tunnel junction as a device platform. [PDF]

RSC Adv, 2020
Tyagi P, Riso C, Amir U, Rojas-Dotti C, Martínez-Lillo J.   +4 more
europepmc   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Coherent Driving of a Single Nitrogen Vacancy Center by a Resonant Magnetic Tunnel Junction. [PDF]

Nano Lett
Yan GQ, McLaughlin N, Yamamoto T, Li S, Nozaki T, Yuasa S, Du CR, Wang H.   +7 more
europepmc   +1 more source