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Graphene-Based Magnetic Tunnel Junctions
IEEE Transactions on Magnetics, 2013The growing field of spintronics relies on new techniques and technologies for injecting and detecting electron spins to generate spin-dependent signals and utilize spin as a new state variable. Magnetic tunnel junctions (MTJs) do this by employing thin oxide layers as insulating barriers between two ferromagnetic metals, but the oxides suffer from ...
Enrique Cobas +4 more
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Epitaxial La0.67Sr0.33MnO3 magnetic tunnel junctions
Journal of Applied Physics, 1997We report the observation of a large magnetoresistance (83%) at low magnetic fields of tens of Oe at 4.2 K in the epitaxial trilayer junction structure, La0.67Sr0.33MnO3/SrTiO3/La0.67Sr0.33MnO3. The spin-polarization parameter of the manganite has been determined from the magnetoresistance value.
X. W. Li +8 more
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Patterned nanoring magnetic tunnel junctions
Applied Physics Letters, 2007Patterned nanoring (NR) magnetic tunnel junctions (MTJs) with outer diameters between 100 and 400nm and narrow ring widths between 25 and 30nm were fabricated. The NR structure consists of CoFeB electrodes and Al-oxide barrier. The tunneling magnetoresistance (TMR) ratio in the range of 20%–50% for the NR-MTJs with the resistance-area product lower ...
Z. C. Wen, H. X. Wei, X. F. Han
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Microstructured magnetic tunnel junctions (invited)
Journal of Applied Physics, 1997We have used a simple self-aligned process to fabricate magnetic tunnel junctions down to submicron sizes. Optical and electron-beam lithographies were used to cover a range of areas spanning five orders of magnitude. The bottom magnetic electrodes (Co or permalloy) in our junctions were exchange biased by an antiferromagnetic layer (MnFe).
W. J. Gallagher +10 more
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A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction.
Nature Materials, 2010S. Ikeda +11 more
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Bio‐Resorbable Magnetic Tunnel Junctions
Advanced MaterialsAbstractMagnetic tunnel junctions (MTJs) play a crucial role in spintronic applications, particularly data storage and sensors. Especially as a non‐volatile memory, MTJs has received substantial attention due to its CMOS compatibility, low power consumption, fast switching speed, and high endurance.
Dong‐Jun Kim +9 more
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Tunneling Magnetoresistance: Experiment (MgO Magnetic Tunnel Junctions)
2016A magnetic tunnel junction (MTJ) consists of an ultrathin insulating layer (tunnel barrier) sandwiched between two ferromagnetic (FM) metal layers (electrodes), as shown in Figure 11.1a. e resistance of MTJ depends on the relative magnetic alignment (parallel or antiparallel) of the electrodes.
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An intrinsic magnetic tunnel junction
Science, 2018Magnetism An electrical current running through two stacked magnetic layers is larger if their magnetizations point in the same direction than if they point in opposite directions. These so-called magnetic tunnel junctions, used in electronics, must be carefully engineered.
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