Results 101 to 110 of about 60,446 (233)

Magnetoresistive Properties of the Array of Iron Oxide Nanoparticles in Conducting Matrix [PDF]

Журнал нано- та електронної фізики, 2015
The results of the study of giant magnetoresistance in film systems Ag / array of ferrite nanoparticles / Ag and graphene / array of ferrite nanoparticles / graphene, which were formed by means of spin-coating or Langmuir-Blodgett technique, are ...
D.M. Kostyuk, S.I. Protsenko, L.V. Odnodvorets, I.V. Cheshko, I.Yu. Protsenko   +4 more
doaj  

Giant Magnetoresistance Effect in Organic Material and Its Potential for Magnetic Sensor

, 2011
Giant magnetoresistance (GMR) material has great potential as next generation magnetic field sensing devices, have magnetic properties and high electrical potential to be developed into various applications such as: magnetic field sensor measurements ...
Djamal, Mitra, Khairurrijal, Ramli, Viridi, Sparisoma   +3 more
core   +1 more source

A Spin‐Texture Spin‐Valves With Van Der Waals Magnets

Advanced Science, EarlyView.
ABSTRACT All‐electrical methods for nucleating, detecting, and manipulating spin textures in 2D van der Waals (vdW) magnets can serve as fundamental building blocks for multi‐state spintronic memory, logic, and neuromorphic computing applications.
Bing Zhao, Roselle Ngaloy, Lars Sjöström, Saroj P. Dash   +3 more
wiley   +1 more source

Anomalous Hall magnetoresistance in a ferromagnet

, 2018
The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets.
Li, Run-Wei, Luo, Ziyan, Pennycook, Stephen J., Wu, Haijun, Wu, Yihong, Xu, Yanjun, Yang, Yumeng, Zhang, Shufeng   +7 more
core   +1 more source

Emergent Spin Fluctuation and Structural Metastability in Self‐Intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ Compounds

Advanced Electronic Materials, EarlyView.
Metastable superstructure and emergent spin fluctuation in self‐intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ ABSTRACT Intercalated van der Waals (vdW) magnetic materials host unique magnetic properties due to the interplay of competing interlayer and intralayer exchange couplings, which depend on the intercalant concentration within the van der ...
Clayton Conner, Ali Sarikhani, Theo Volz, Mathew Pollard, Mitchel Vaninger, Xiaoqing He, Steven Kelley, Jacob Cook, Avinash Sah, John Clark, Hunter Lucker, Cheng Zhang, Paul Miceli, Yew San Hor, Xiaoqian Zhang, Guang Bian   +15 more
wiley   +1 more source

Magnetotransport properties of La$_{1-x}$Ca$_x$MnO$_3$ (0.52 $\leq x \leq$ 0.75): signature of phase coexistence

, 2017
We report the temperature and magnetic field dependence of transport properties in epitaxial films of the manganite La$_{1-x}$Ca$_{x}$MnO$_{3}$ in the overdoped region of the phase diagram for $x > 0.5$, where a charge--ordered (CO) and an ...
Basletić, M., Fischgrabe, F., Hamzić, A., Korin-Hamzić, B., Moshnyaga, V., Tafra, E., Tomić, S., Čulo, M.   +7 more
core   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
wiley   +1 more source

Concealable and Field‐Free Physical Unclonable Function Based on Voltage‐Controlled Magnetic Tunnel Junctions

Advanced Electronic Materials, EarlyView.
A concealable physical unclonable function (PUF) based on an array of 384 nanoscale voltage‐controlled magnetic tunnel junctions is demonstrated. The PUF operates without any external magnetic field. It uses a combination of deterministic and stochastic switching mechanisms, based on the spin transfer torque and voltage‐controlled magnetic anisotropy ...
Thomas Neuner, Jaimin Kang, Jordan Athas, Christian Duffee, Noraica Davila Melendez, Jordan A. Katine, Pedram Khalili Amiri   +6 more
wiley   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Large Field‐Like Orbital Torque in FeNi/Cr Heterostructures

Advanced Electronic Materials, EarlyView.
Orbital torque enables field‐free magnetization switching in spintronics. FeNi/Cr heterostructures exhibit a large field‐like orbital torque. This torque originates from a tilted orbital current polarization within the Cr layer, producing a significant z‐component.
Zhendong Chen, Wenjing Zhong, Shun Wang, Zhongxiang Zhang, Xiangyu Zheng, Yongbing Xu, Peiyan Liu, Wenjing Hu, Xinbao Geng, Chen Yao, Tiejun Zhou, Bo Liu, Guanqi Li, Sheng Jiang, Junlin Wang, Jing Wu   +15 more
wiley   +1 more source