Results 91 to 100 of about 31,419 (268)

Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP

Nature Communications, 2016
Magnetoresistance of topological semimetal shows unusual electron transport behaviour. Here, Arnold et al. demonstrate detailed Fermi surface topology of Weyl semimetal TaP and show that negative longitudinal magnetoresistance shows up without well ...
Frank Arnold, Chandra Shekhar, Shu-Chun Wu, Yan Sun, Ricardo Donizeth dos Reis, Nitesh Kumar, Marcel Naumann, Mukkattu O. Ajeesh, Marcus Schmidt, Adolfo G. Grushin, Jens H. Bardarson, Michael Baenitz, Dmitry Sokolov, Horst Borrmann, Michael Nicklas, Claudia Felser, Elena Hassinger, Binghai Yan   +17 more
doaj   +1 more source

High magnetoresistance in ultra-thin two-dimensional Cr-based MXenes

, 2018
Developing effective magnetoresistance devices has become beneficial due to their extensive applications in electronics such as data storage. One challenge is to reduce the scale of devices while maintaining a high magnetoresistance.
Yang, Jianhui, Wang, Anping, Wang, Ruining, Chen, Liang, Wang, Chuan-Kui, Zhang, Guang-Ping, Zhang, Shaozheng   +6 more
core   +1 more source

Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample

Materials Research, 2012
Magnetoresistance measurements were performed on an illuminated semi-insulating GaAs sample with intrinsic deep level defects. Electrical carriers were photo-generated under light excitation and positive magnetoresistance for B < 0.2 T was observed in ...
Emilson Ribeiro Viana, Geraldo Mathias Ribeiro, Alfredo Gontijo de Oliveira, Marcelos Lima Peres, Rero Marques Rubinger, Carla Patrícia Lacerda Rubinger   +5 more
doaj  

Large magnetoresistance of insulating silicon films with superconducting nanoprecipitates

AIP Advances, 2016
We report on large negative and positive magnetoresistance in inhomogeneous, insulating Si:Ga films below a critical temperature of about 7 K. The magnetoresistance effect exceeds 300 % at temperatures below 3 K and fields of 8 T.
V. Heera, J. Fiedler, W. Skorupa
doaj   +1 more source

Efficient Current‐Driven Perpendicular Magnetization Switching Through the Synergy of the Orbital and Spin Hall Effects

Advanced Science, EarlyView.
NiNb alloys enable efficient charge‐to‐spin conversion by combining the spin Hall effect of nickel with the orbital Hall effect of niobium. Composition tuning yields spin‐torque efficiencies of −1.4 to −1.7 and a non‐monotonic efficiency‐resistivity relationship, revealing orbital‐spin synergy beyond conventional spin Hall materials and offering a ...
Chuangwen Wu, Jing Zhou, Yibo Fan, Jiali Chen, Rongce Sun, Zonghao Deng, Zengxin Wei, Chuantong Ren, Xingen Zheng, Zhaowei Zhang, Jing Zhang, Jingfeng Li, Jinkui Zhao, Wei Jiang, Haibo Ke, Hao Wu, Weihua Wang   +16 more
wiley   +1 more source

Magnetoresistance behavior of UNiGe [PDF]

, 1995
The authors have measured the temperature dependences of the magnetoresistance of single-crystalline UNiGe for both parallel (i//B//c-axis) and perpendicular configurations (i//a-axis, B//c-axis) in magnetic fields up to 18 T.
Lacerda, A., Brueck, E., Purwanto, A., Torikachvili, M.S., Boer, F.R. de, Nakotte, H., Havela, L., Sechovsky, V., Prokes, K.   +8 more
core   +1 more source

Universal negative magnetoresistance in antiferromagnetic metals from symmetry breaking of electron wave functions

Communications Materials
Layered van der Waals crystals of topologically non-trivial and trivial semimetals with antiferromagnetic (AFM) ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a ...
Pavel D. Grigoriev, Nikita S. Pavlov, Igor A. Nekrasov, Igor R. Shein, Andrey V. Sadakov, Oleg A. Sobolevskiy, Evgeny Maltsev, Vladimir M. Pudalov   +7 more
doaj   +1 more source

Voltage‐Reconfigurable Magneto‐Ionic Nanolayers in Dot Arrays for Probabilistic, Materials‐Engineered Security Primitives

Advanced Science, EarlyView.
A magneto‐ionic security‐by‐materials‐design strategy exploits voltage‐driven N3– migration in selectively contacted FeCoN dots, creating reconfigurable sub‐15 nm ferromagnetic sublayers with deterministic and/or probabilistic (single‐domain↔vortex) states, voltage‐tunable probabilities and fully stochastic orientation/chirality.
Irena Spasojevic, Federica Celegato, Alessandro Magni, Paola Tiberto, Jordi Sort   +4 more
wiley   +1 more source

Magnetoresistive Properties of Fe Films ond Fe-Based Multilayers [PDF]

Журнал нано- та електронної фізики, 2010
The investigation results of the size dependence of magnetoresistive effect are presented for Fe films prepared by the resistive sputtering method on a substrate heated to 400 K.
I.Yu. Protsenko, D.M. Kondrahova, O.V. Synashenko   +2 more
doaj  

Programmable Topological Magnetic Textures in Above‐Room‐Temperature 2D Ferromagnet Fe3GaTe2

Advanced Science, EarlyView.
This work demonstrates the programmable generation and deterministic modulation of magnetic skyrmion bags with high‐order topological numbers in the above‐room‐temperature 2D ferromagnet Fe3GaTe2 (FGaT) via current‐pulse control. Furthermore, highly efficient electrical manipulation and current‐driven parallel motion of these high‐order topological ...
Hanqing Shi, Yilian Xi, Jingwei Zhang, Jiaqi Liu, Zhizhen Ren, Shilei Zhang, Weichang Hao, Haifeng Feng, Yi Du   +8 more
wiley   +1 more source