Results 71 to 80 of about 5,925 (208)
Multiferroic order parameters – polarization, magnetization, and ferroelastic strain – are positioned as dynamic design variables for batteries. Their mechanistic roles, practical tuning through fabrication and external fields, and ferroic‐resolved characterization routes are unified into a closed‐loop framework, revealing how coupled ferroic responses
Jiaqi Su +13 more
wiley +1 more source
Layered van der Waals crystals of topologically non-trivial and trivial semimetals with antiferromagnetic (AFM) ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a ...
Pavel D. Grigoriev +7 more
doaj +1 more source
Sliding Ferroelectricity Driven Spin‐Layertronics in Altermagnetic Multilayers
Integrating sliding ferroelectricity with altermagnetism enables nonvolatile electrical control of spin and layer degrees of freedom. In bilayer CuF2, interlayer translation reverses layer‐locked spin‐split bands, establishing a multifunctional “spin‐layertronic” platform.
Rui Peng +5 more
wiley +1 more source
Large magnetoresistance of insulating silicon films with superconducting nanoprecipitates
We report on large negative and positive magnetoresistance in inhomogeneous, insulating Si:Ga films below a critical temperature of about 7 K. The magnetoresistance effect exceeds 300 % at temperatures below 3 K and fields of 8 T.
V. Heera, J. Fiedler, W. Skorupa
doaj +1 more source
Anomalous magnetoresistance in centrosymmetric skyrmion-lattice magnet Gd2PdSi3
We performed a systematic study of the temperature- and field-dependence of magnetization and resistivity of Gd _2 PdSi _3 , which is a centrosymmetric skyrmion crystal.
Han Zhang +7 more
doaj +1 more source
This study presents printed magnetoresistive sensors with a vertically aligned architecture that enables high optical transparency and mechanical flexibility. By integrating deep learning for the analysis of complex spatiotemporal signal patterns, the system further achieves intelligent multimodal interaction capabilities.
Rui Xu +11 more
wiley +1 more source
Citation: 'magnetoresistance' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.08839 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms. Requests
openaire +2 more sources
Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample
Magnetoresistance measurements were performed on an illuminated semi-insulating GaAs sample with intrinsic deep level defects. Electrical carriers were photo-generated under light excitation and positive magnetoresistance for B < 0.2 T was observed in ...
Emilson Ribeiro Viana +5 more
doaj
We investigated a special electrical phenomenon, known as antisymmetric magnetoresistance with four distinct resistance states, in 2D Fe3GaTe2/Pt devices at room temperature. By designing devices with two separated magnetic nanoflakes, we confirmed that the effect originates from spin–momentum locking rather than magnetic domain walls or interface ...
Yunwen Zhu +10 more
wiley +1 more source
Magnetoresistive Properties of Fe Films ond Fe-Based Multilayers [PDF]
The investigation results of the size dependence of magnetoresistive effect are presented for Fe films prepared by the resistive sputtering method on a substrate heated to 400 K.
I.Yu. Protsenko +2 more
doaj

