Results 81 to 90 of about 5,925 (208)

Strain Tuning the Occupation of Candidate Topological Weyl States in W‐Doped MoTe2

Advanced Science, EarlyView.
The present study investigates strain‐induced modifications of the electronic structure in the Weyl semimetal Td${\rm T}_d$‐Mo0.91W0.09Te2${\mathrm{Mo}}_{0.91}{\mathrm{W}}_{0.09}{\mathrm{Te}}_{2}$ using hard X‐ray angle‐resolved photoemission spectroscopy.
Amon Lanz, Olena Tkach, Yaryna Lytvynenko, Florian Diekmann, Harshit Agarwal, Sofia Michaela Souliou, Mehdi Frachet, Michael Merz, Sergii V. Chernov, Andrei Gloskovskii, Volkmar Koller, Dmytro Kutnyakhov, Moritz Hoesch, Christoph Schlueter, Philipp Rüssmann, Yuriy Mokrousov, Matthieu Le Tacon, Kai Rossnagel, Jure Demsar, Gerd Schönhense, Hans‐Joachim Elmers, Olena Fedchenko   +21 more
wiley   +1 more source

Chiral‐Induced Spin Selectivity Effect in a 1 nm Thin 1,1′‐Binaphthyl‐2,2′‐diyl Hydrogenphosphate Self‐Assembled Monolayer on Nickel Oxide

Advanced Science, EarlyView.
A self‐assembled monolayer (≈0.9 nm) of an axially chiral binaphthol phosphoric acid derivative on a ferromagnetic Ni/NiOx substrate shows chiral‐induced spin selectivity (CISS) magnetoresistance of 50%–80%. This thermally and chemically robust functional stack shows the way towards practical spintronic devices based on the CISS effect.
Abin Nas Nalakath, Christian Pfeiffer, Anu Gupta, Franziska Schölzel, Michael Zharnikov, Georgeta Salvan, Ron Naaman, Marc Tornow, Peer Kirsch   +8 more
wiley   +1 more source

Emergent Spin Fluctuation and Structural Metastability in Self‐Intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ Compounds

Advanced Electronic Materials, EarlyView.
Metastable superstructure and emergent spin fluctuation in self‐intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ ABSTRACT Intercalated van der Waals (vdW) magnetic materials host unique magnetic properties due to the interplay of competing interlayer and intralayer exchange couplings, which depend on the intercalant concentration within the van der ...
Clayton Conner, Ali Sarikhani, Theo Volz, Mathew Pollard, Mitchel Vaninger, Xiaoqing He, Steven Kelley, Jacob Cook, Avinash Sah, John Clark, Hunter Lucker, Cheng Zhang, Paul Miceli, Yew San Hor, Xiaoqian Zhang, Guang Bian   +15 more
wiley   +1 more source

Atomically Modulating Competing Exchange Interactions in Centrosymmetric Skyrmion Hosts GdRu2X2 (X = Si and Ge)

Advanced Electronic Materials, EarlyView.
Our work bridges the gap between skyrmion discovery and material design by demonstrating how atomic‐scale control of exchange interactions enables tunable skyrmion phase transitions in centrosymmetric magnetic metals. ABSTRACT Magnetic skyrmions are topologically protected spin states that hold promise for shaping the future of electronics.
Dasuni N. Rathnaweera, Xudong Huai, K. Ramesh Kumar, Michał J. Winiarski, Tomasz Klimczuk, Allana G. Iwanicki, Satya K. Kushwaha, Martin Mourigal, Tyrel M. McQueen, Thao T. Tran   +9 more
wiley   +1 more source

Improved Magnetoresistance of Tungsten Telluride and Silver Telluride Composites

Advanced Electronic Materials
Tungsten telluride (WTe2) and silver telluride (Ag2Te) are recently developed magnetoresistive materials, and bulk composites of these materials would be extremely advantageous in improving the magnetoresistance characteristics of the individual ...
Mingxing Cao, Zhigao Zhang, Jian He, Ruifen Hou, Wenjie Gong, Zhihong Wang   +5 more
doaj   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Machine Learning‐Assisted Second‐Order Perturbation Theory for Chemical Potential Correction Toward Hubbard U Determination

Advanced Intelligent Discovery, EarlyView.
In this work, the Doubao large language model (LLM) is involved in the formula derivation processes for Hubbard U determination regarding the second‐order perturbations of the chemical potential. The core ML tool is optimized for physical domain knowledge, which is not limited to parameter prediction but rather serves as an interactive physical theory ...
Mingzi Sun, Tong Wu, Baian Chen, Zikang Li, Qiuyang Lu, Lu Lu, Hon Ho Wong, Cheuk Hei Chan, Bolong Huang   +8 more
wiley   +1 more source

Enhanced magnetoresistance induced collaboratively by spin and orbital currents

AIP Advances
Orbital currents in light metals or metal oxides without the strong spin–orbit coupling have become an important means to achieve low-power magnetization switching in spin–orbitronic devices.
Shuyi Yang, Jinnan Liu, Huan Liu, Yongji Li, Wei Zhang, Zhongming Zeng, Zhiyong Quan   +6 more
doaj   +1 more source

SiOx‐Based Probabilistic Bits Enabling Invertible Logic Gate for Cryptographic Applications

Advanced Intelligent Systems, EarlyView.
To enable lightweight hardware encryption and decryption, a Ti/SiOx/Ti threshold switching device is engineered to generate controllable stochastic oscillations. By tuning the input voltage, the device produces a programmable spike probability governed by intrinsic switching dynamics, enabling probabilistic bits that construct an invertible ...
Jihyun Kim, Hyeonsik Choi, Jiyong Woo
wiley   +1 more source