Results 81 to 90 of about 31,419 (268)

Magnetoresistance in a 2-Terminal Structure for Current Limitation

IEEE Access
We present a theoretical study of the magnetoresistance in a thin semiconductor stripe between two metal layers for current limitation with and without metallic inclusion.
Jeremy Letang, Luiz Guilherme Enger, Perla Malago, Peter Leitner, Yagmur Hazman, Katharina Weichselbaum, Stefan Dan Costea, Michael Ortner   +7 more
doaj   +1 more source

Generation of Probabilistic Bits by Exploiting Orthogonal Spin Currents in Magnetic Trilayers

Advanced Science, EarlyView.
Fe/Ti/CoFeB trilayers generate orthogonal spin currents that drive stochastic spin–orbit‐torque switching for probabilistic‐bit operation. The switching probability is continuously controlled by the in‐plane magnetic field and drive current, enabling tunable random bit generation.
Donghyeon Han, Chaehyeon Shin, Seok‐Jong Kim, Yunho Jang, Daekyu Koh, Taehwan Kim, Jaeheon Jung, Geon‐Woo Baek, Minseok Kang, Eunseok Kim, Geun‐Hee Lee, Jeongchun Ryu, Makoto Kohda, Junsaku Nitta, Kab‐Jin Kim, Jongsun Park, Kyung‐Jin Lee, Byong‐Guk Park   +17 more
wiley   +1 more source

Organic magnetoresistance from deep traps [PDF]

, 2014
We predict that singly occupied carrier traps, produced by electrical stress or irradiation within organic semiconductors, can cause spin blockades and the large room-temperature magnetoresistance known as organic magnetoresistance.
M. E. Flatté, Flatté, M.E., Harmon, N.J., N. J. Harmon, Harmon, NJ, Flatté, ME Michael   +5 more
core   +2 more sources

Features of Modeling of the Magnetorefractive Effect in Multilayered Metal Nanostructures

Российский технологический журнал, 2019
The magnetorefractive effect (MRE) is important and interesting from both fundamental and practical points of view. This effect consists in a change in the reflection coefficient or the passage of an electromagnetic wave from magnetized structures with ...
A. A. Mokrushina, A. N. Yurasov
doaj   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

Effect of Y Doping in La Site on Low Field Magnetoresistance of ManganiteLa0. 7 Sr0. 3 MnO3

Journal of Harbin University of Science and Technology, 2019
In view of magnetoresistance effect of perovskite manganite in low magnetic field，manganite polycrystalline samples La0. 7 － xYxSr0. 3MnO3 ( x = 0，0. 1，0. 2) were prepared by solid-state reaction technique. Xray diffraction spectrums of the two samples (
ZHANG Guang-yu, LIU Lin-jing
doaj   +1 more source

Multiferroic‐Centric Materials and Systems Engineering for Battery Applications: An Insight Into Mechanisms, Strategies, and Characterizations

Advanced Science, EarlyView.
Multiferroic order parameters – polarization, magnetization, and ferroelastic strain – are positioned as dynamic design variables for batteries. Their mechanistic roles, practical tuning through fabrication and external fields, and ferroic‐resolved characterization routes are unified into a closed‐loop framework, revealing how coupled ferroic responses
Jiaqi Su, Yanda Zhu, Hao Peng, Manman Li, Xuzihan Zhang, Meixiao Wu, Siyuan Zhang, Yuhan Zeng, Jiwen Liao, Ming Luo, Hetaishan Huang, Yutong Wang, Sean Li, Wenxian Li   +13 more
wiley   +1 more source

Sliding Ferroelectricity Driven Spin‐Layertronics in Altermagnetic Multilayers

Advanced Science, EarlyView.
Integrating sliding ferroelectricity with altermagnetism enables nonvolatile electrical control of spin and layer degrees of freedom. In bilayer CuF2, interlayer translation reverses layer‐locked spin‐split bands, establishing a multifunctional “spin‐layertronic” platform.
Rui Peng, Guangxu Su, Yangyang Fan, Jiaan Li, Fanxin Liu, Yee Sin Ang   +5 more
wiley   +1 more source

Magnetoresistance of thoriated UBe13 [PDF]

, 1990
We have measured the magnetoresistance for the heavy-fermion system U1-xThxBe13 for x=0, 0.006, 0.015, and 0.033 at temperatures between 1.2 K and 6K. The samples with x=0.006 and 0.015 develop a positive magnetoresistance as the temperature is increased
Graf, MJ, Allor, BA, Smith, JL, Fisk, Z
core   +1 more source

Magnetoresistive Properties of the Array of Iron Oxide Nanoparticles in Conducting Matrix [PDF]

Журнал нано- та електронної фізики, 2015
The results of the study of giant magnetoresistance in film systems Ag / array of ferrite nanoparticles / Ag and graphene / array of ferrite nanoparticles / graphene, which were formed by means of spin-coating or Langmuir-Blodgett technique, are ...
D.M. Kostyuk, S.I. Protsenko, L.V. Odnodvorets, I.V. Cheshko, I.Yu. Protsenko   +4 more
doaj