Results 81 to 90 of about 61,154 (248)

Magnetoelectric Nanoparticle‐Based Wireless Brain–Computer Interface: Underlying Physics and Projected Technology Pathway

Advanced Science, EarlyView.
Magnetoelectric nanoparticles (MENPs) enable fully wireless, minutely invasive neuromodulation, and potentially neural recording, by converting magnetic into electric and, conversely, electric into magnetic fields, respectively, at high spatiotemporal resolution.
Elric Zhang, Max Shotbolt, Mostafa Abdel‐Mottaleb, Shawnus Chen, Victoria Andre, Jieyuan Tian, Jonathan Shulgach, Max Murphy, Brian Noga, Ping Liang, Darcy Griffin, Douglas Weber, Marta Pardo, Salvador Pane, Sakhrat Khizroev   +14 more
wiley   +1 more source

Negative differential conductance and magnetoresistance oscillations due to spin accumulation in ferromagnetic double-island devices

, 2006
Spin-dependent electronic transport in magnetic double-island devices is considered theoretically in the sequential tunneling regime. Electric current and tunnel magnetoresistance are analyzed as a function of the bias voltage and spin relaxation time in
H. Shimada, I. Weymann, Ireneusz Weymann, J. Barnaś, Józef Barnaś, K. Ono, W. G. van der Wiel   +6 more
core   +1 more source

Type‐II Dirac Fermions in Monolayer In2O: Interplay of Magnetotransport, Spin Hall Effect, and Superconductivity

Advanced Science, EarlyView.
First‐principles calculations reveal that monolayer In2O${\rm In}_2{\rm O}$ hosts type‐II Dirac fermions near the Fermi level, which split into Weyl points under spin‐orbit coupling. The material exhibits negative and giant magnetoresistance, a pronounced spin Hall effect, and phonon‐mediated superconductivity at 1.5 K, establishing it as a unique ...
Qing‐Bo Liu, De‐Ming Feng, Wen‐Neng Zhao, Yu‐Yang Zhao, Lun Xiong, Xing‐Yi Tan, Hua‐Hua Fu   +6 more
wiley   +1 more source

The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

AIP Advances, 2015
The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ) was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 ...
Z. H. Zhang, Lihui Bai, C.-M. Hu, S. Hemour, K. Wu, X. L. Fan, D. S. Xue, D. Houssameddine   +7 more
doaj   +1 more source

Memristive Physical Reservoir Computing

Advanced Science, EarlyView.
Memristors’ nonlinear dynamics and input‐dependent memory effects make them ideal candidates for high‐performance physical reservoir computing (RC). Based on their conductance modulation, memristors can be classified as electronic or optoelectronic types.
Dian Jiao, Ziyuan Wang, Jingrui Wang, Li Zhang, Xianhua Wei, Lingxiang Hu, Zongxiao Li, Athanasios V. Vasilakos, Zhizhen Ye, Fei Zhuge   +9 more
wiley   +1 more source

Ballistic versus diffusive magnetoresistance of a magnetic point contact

, 2002
The quasiclassical theory of a nanosize point contacts (PC) between two ferromagnets is developed. The maximum available magnetoresistance values in PC are calculated for ballistic versus diffusive transport through the area of a contact.
A. Overhauser, A.V. Zaitsev, B. P. Vodopyanov, G. Tatara, G.G. Cabrera, G.G. Cabrera, H. Imamura, J.-Ph. Ansermet, J.B.A.N. van Hoof, J.C. Gróbli, K. B. Efetov, L. Berger, L. Berger, L. R. Tagirov, L.D. Landau, M.A.M. Gijs, N. García, N. García, P. Bruno, P.M. Levy, R.J. Soulen, R.J. Soulen, S.K. Upadhyay, Yu.V. Sharvin   +23 more
core   +1 more source

Progress in Strain Engineering of 2D‐Integrated Heterostructures for Ultrasensitive Sensors

Advanced Science, EarlyView.
 . ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
That Buu Ton, Tuan Sang Tran, Duc Khanh Tran, Van Thanh Dau, Dzung Viet Dao   +4 more
wiley   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

New Mechanism of Magnetoresistance in Bulk Semiconductors: Boundary Condition Effects

, 1996
We consider the electronic transport in bounded semiconductors in the presence of an external magnetic field. Taking into account appropriate boundary conditions for the current density at the contacts, a change in the magnetoresistance of bulk ...
Akhieser, Bass, G. Gonzalez de la Cruz, Gurevich, Madelung, Sokolov, V.V. Prosentsov, Yu.G. Gurevich   +7 more
core   +2 more sources

Oxygen Vacancies Driven Photoconductivity in Layered Cobaltite Epitaxial Films

Advanced Electronic Materials, EarlyView.
ABSTRACT Understanding photoinduced phenomena in complex oxides is crucial for developing next‐generation optoelectronic devices. Here, we report pronounced ultraviolet (UV) light‐induced photoconductivity in epitaxial PrBa1‐xCaxCo2O5+δ (x = 0.5) thin films grown on (001) LSAT substrates via pulsed laser deposition.
Yanbin Chen, Yiqun Liu, Xing Xu, Jing Ma, Ce‐wen Nan, Chonglin Chen   +5 more
wiley   +1 more source