Results 81 to 90 of about 5,980 (228)

Giant magnetoresistance in the cluster glass regime of Co-Ga alloys

open access: yesAIP Advances, 2016
A detailed study of low temperature electrical transport properties of CoxGa100−x (x = 54, 55.5, 57) alloy has been carried out. The origin of the resistivity anomalies and correlation between magnetic and electrical transport properties are identified ...
Sk Mohammad Yasin   +4 more
doaj   +1 more source

Néel‐Vector‐Dependent Unconventional Spin‐Orbit Torque for Deterministic Field‐Free Switching in NiO (110)‐Based Trilayers

open access: yesAdvanced Science, EarlyView.
Unconventional spin currents are generated in an antiferromagnetic NiO(110)/Ta/CoFeB trilayer, where the Néel vector governs spin transport. The resulting spin–orbit torques enable deterministic field‐free switching of perpendicular magnetization.
Hyeong‐Joo Seo   +12 more
wiley   +1 more source

magnetoresistance

open access: yes
Citation: 'magnetoresistance' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.08839 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms. Requests
openaire   +2 more sources

Improved Magnetoresistance of Tungsten Telluride and Silver Telluride Composites

open access: yesAdvanced Electronic Materials
Tungsten telluride (WTe2) and silver telluride (Ag2Te) are recently developed magnetoresistive materials, and bulk composites of these materials would be extremely advantageous in improving the magnetoresistance characteristics of the individual ...
Mingxing Cao   +5 more
doaj   +1 more source

Emergent 3D Fermiology and Magnetism in an Intercalated Van der Waals System

open access: yesAdvanced Science, EarlyView.
An emergent three‐dimensional electronic state is uncovered in an intercalated van der Waals system. A spin‐polarized intercalant‐host hybridized band crossing the Fermi level provides an itinerant channel for interlayer exchange, highlighting how electronic dispersion governs magnetic dimensionality.
Luigi Camerano   +18 more
wiley   +1 more source

Terahertz‐Nanoscale Visualization of the Microscopic Spin‐Charge Architecture of Colossal Magnetoresistive Switching

open access: yesAdvanced Science, EarlyView.
This study employs cryogenic magneto‐terahertz nanoscopy to reveal the real‐space electrodynamics of the colossal magnetoresistance transition. By capturing the terahertz electrodynamic evolution of field‐driven spin switching, the work unveils the dissipative dynamics of emergent metallic states, providing a high‐frequency view of coupled spin‐charge ...
Samuel Haeuser   +6 more
wiley   +1 more source

Efficient Current‐Driven Perpendicular Magnetization Switching Through the Synergy of the Orbital and Spin Hall Effects

open access: yesAdvanced Science, EarlyView.
NiNb alloys enable efficient charge‐to‐spin conversion by combining the spin Hall effect of nickel with the orbital Hall effect of niobium. Composition tuning yields spin‐torque efficiencies of −1.4 to −1.7 and a non‐monotonic efficiency‐resistivity relationship, revealing orbital‐spin synergy beyond conventional spin Hall materials and offering a ...
Chuangwen Wu   +16 more
wiley   +1 more source

Enhanced magnetoresistance induced collaboratively by spin and orbital currents

open access: yesAIP Advances
Orbital currents in light metals or metal oxides without the strong spin–orbit coupling have become an important means to achieve low-power magnetization switching in spin–orbitronic devices.
Shuyi Yang   +6 more
doaj   +1 more source

Magnetoresistive Properties of Thin Film Systems Based on Fe - Gd and Co - Gd [PDF]

open access: yesЖурнал нано- та електронної фізики, 2012
The paper is devoted to general laws impact layer thickness based on Gd and thickness of the ferromagnet on the value of magnetoresistance and coercivity in layered films Fe / а-Gd / Fe and Co / а-Gd / Co at different measurement geometry and orientation
S.I. Vorobiov   +3 more
doaj  

Voltage‐Reconfigurable Magneto‐Ionic Nanolayers in Dot Arrays for Probabilistic, Materials‐Engineered Security Primitives

open access: yesAdvanced Science, EarlyView.
A magneto‐ionic security‐by‐materials‐design strategy exploits voltage‐driven N3– migration in selectively contacted FeCoN dots, creating reconfigurable sub‐15 nm ferromagnetic sublayers with deterministic and/or probabilistic (single‐domain↔vortex) states, voltage‐tunable probabilities and fully stochastic orientation/chirality.
Irena Spasojevic   +4 more
wiley   +1 more source

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