Results 101 to 110 of about 61,154 (248)

Emergence of Double‐Dome Superconductivity in the Pressurized Dirac Semimetal BaMg2Bi2

Advanced Electronic Materials, EarlyView.
ABSTRACT Dirac semimetal BaMg2${\rm BaMg}_{2}$Bi2${\rm Bi}_{2}$ is reported to be a unique topological material that manifests surface superconductivity that coexists with bulk band topology at ambient pressure. Here, we present a comprehensive investigation of high‐pressure superconducting properties in BaMg2${\rm BaMg}_{2}$Bi2${\rm Bi}_{2}$ single ...
Qi Wang, Juefei Wu, Cuiying Pei, Yi Zhao, Yiyan Wang, Yanpeng Qi   +5 more
wiley   +1 more source

Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample

Materials Research, 2012
Magnetoresistance measurements were performed on an illuminated semi-insulating GaAs sample with intrinsic deep level defects. Electrical carriers were photo-generated under light excitation and positive magnetoresistance for B < 0.2 T was observed in ...
Emilson Ribeiro Viana, Geraldo Mathias Ribeiro, Alfredo Gontijo de Oliveira, Marcelos Lima Peres, Rero Marques Rubinger, Carla Patrícia Lacerda Rubinger   +5 more
doaj  

Resonant tunneling magnetoresistance in epitaxial metal-semiconductor heterostructures

, 2005
We report on resonant tunneling magnetoresistance via localized states through a ZnSe semiconducting barrier which can reverse the sign of the effective spin polarization of tunneling electrons.
A. J. A. de Oliveira, D. H. Mosca, D. H. Mosca, J. Varalda, J.-M. George, M. Büttiker, M. Eddrief, M. Jullière, M. Marangolo, P. K. Lim, R. Landauer, T. Miyazaki, V. H. Etgens   +12 more
core   +3 more sources

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

magnetoresistance

Citation: 'magnetoresistance' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.08839 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms. Requests
openaire   +2 more sources

Colossal Magnetoresistance in the Mn2+ Oxypnictides NdMnAsO1-xFx

, 2012
Colossal magnetoresistance (CMR) is a rare phenomenon in which the electronic resistivity of a material can be decreased by orders of magnitude upon application of a magnetic field.
Abbie C. Mclaughlin, Bednorz J. G., Bourdarot F., Chan J. Y., Chen G. F., Dagotto E., Efros A. L., Emery N., Emery N., Eve J. Wildman, Hwang H. Y., Janet M. S. Skakle, Jin. S., Kamihara Y., Kobayashi K. L., Marcinkova A., Margadonna S., Millis A. J., Mott N. F., Nicolas Emery, Oliveira N. F., Ramirez A. P., Rao C. N. R., Ren Z. A., Shapira Y., Subramanian M. A., Uehara M.   +26 more
core   +1 more source

Electrically and Magnetically Tunable Charge–Density–Wave Transport in Quasi‐2D h‐BN/1T‐TaS2 Field Effect Devices

Advanced Electronic Materials, EarlyView.
Perpendicular electric and magnetic fields are used to control charge‐density‐wave (CDW) domain dynamics in quasi‐two‐dimensional h‐BN/1T‐TaS2 field‐effect devices. Electrical gating produces a non‐monotonic modulation of the CDW depinning threshold — behavior distinct from quasi‐one‐dimensional CDW systems.
Jonas O. Brown, Maedeh Taheri, Nicholas R. Sesing, Tina T. Salguero, Alexander A. Balandin   +4 more
wiley   +1 more source

Unconventional magnetoresistance in long InSb nanowires

, 2002
Magnetoresistance in long correlated nanowires of degenerate semiconductor InSb in asbestos matrix (wire diameter of around 5 nm, length 0.1 - 1 mm) is studied over temperature range 2.3 - 300 K. At zero magnetic field the electric conduction $G$ and the
A. Bachtold, A. Furusaki, C. Biagini, C. L. Kane, C. L. Kane, G. Chaboussant, H. Frahm, J. Heremans, J. Voit, L. I. Glazman, M. Bockrath, M. Fabrizio, P. Monceau, S. V. Zaitsev-Zotov, S. V. Zaitsev-Zotov, T. Kimura, Yu. A. Firsov, Yu. A. Kumzerov   +17 more
core   +1 more source

Tailoring the Anomalous Nernst Effect of Co/Pt Multilayers Grown on Strained Flexible Substrates

Advanced Electronic Materials, EarlyView.
Strain engineering offers a powerful approach to enhance the Anomalous Nernst Effect in flexible Co/Pt multilayers. This study demonstrates a 30% thermoelectric improvement under mechanical strain, directly attributed to the modulation of intrinsic interfacial interactions.
Pablo Martinez Outomuro, David Navas, Cantia Belloso, Guillermo Lopez‐Polin, Agustina Asenjo   +4 more
wiley   +1 more source

Uncovering the Role of Intrinsic Magnetic Order in Oxygen Evolution Reaction Activity With Operando Spectroscopy

Advanced Energy Materials, EarlyView.
Operando magnetic spectroscopy provides insight into how intrinsic magnetic order modulates the oxygen evolution reaction on La0.67Sr${\rm La}_{0.67}{\rm Sr}$0.33MnO$_{0.33}{\rm MnO}$3$_3$ thin films. Temperature‐dependent operando FMR and ambient‐pressure XMCD suggest a correlation between activity and the emergence of ferromagnetic regions near and ...
Emma van der Minne, Silvia Mauri, Anatoliy A. Vereshchagin, Vadim Ratovskii, Ellen M. Kiens, Hemanita Sharma, Jan Behrends, Piero Torelli, Gertjan Koster, Christoph Baeumer   +9 more
wiley   +1 more source