Results 51 to 60 of about 61,154 (248)
Emptying Dirac valleys in bismuth using high magnetic fields [PDF]
The Fermi surface of elemental bismuth consists of three small rotationally equivalent electron pockets, offering a valley degree of freedom to charge carriers. A relatively small magnetic field can confine electrons to their lowest Landau level. This is
Behnia, Kamran +6 more
core +2 more sources
Rapid Fabrication of Self‐Propelled and Steerable Magnetic Microcatheters for Precision Medicine
A rapid Joule heating fabrication method for the production of self‐propelling, adaptive microcatheters, with tunable stiffness and integrated microfluidic channels is presented. Demonstrated through three microrobotic designs, including a steerable guiding catheter, an untethered wave‐crawling TubeBot, and a distal‐end propelled microcatheter, it was ...
Zhi Chen +5 more
wiley +1 more source
Switching Current vs. Magnetoresistance in Magnetic Multilayer Nanopillars
We study current-driven magnetization switching in nanofabricated magnetic trilayers, varying the magnetoresistance in three different ways. First, we insert a strongly spin-scattering layer between the magnetic trilayer and one of the electrodes, giving
Bass, J. +3 more
core +1 more source
Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr
Biaxial compressive strain significantly enhances magnetoresistance and critical saturation fields in thin flakes of the 2D magnet CrSBr, along all three crystallographic axes. First‐principles calculations link these effects to strain‐induced increases in exchange interactions and magnetic anisotropy.
Eudomar Henríquez‐Guerra +19 more
wiley +1 more source
Tunneling magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal invariant ...
Zhongbo Yan, Shaolong Wan
doaj +1 more source
Magetoresistance of RuO_2-based resistance thermometers below 0.3 K
We have determined the magnetoresistance of RuO_2-based resistors (Scientific Instruments RO-600) between 0.05 K and 0.3 K in magnetic fields up to 8 T. The magnetoresistance is negative around 0.5 T and then becomes positive at larger fields.
Bat'ko +16 more
core +1 more source
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam +6 more
wiley +1 more source
Theory of Tunnel Magnetoresistance
We present a review of theories of tunnel magnetoresistance (TMR) putting an emphasis on the role of electron scattering due to randomness. We adopt the linear response theory and generalize the conductance formula to calculate the electrical conductance in layered structures.
Jun-ichiro Inoue, Hiroyoshi Itoh
openaire +3 more sources
Why Is the Mechanism Underlying the Chiral‐Induced Selectivity Effect Still Challenging?
The chiral‐induced spin selectivity (CISS) effect is observed in many experimental configurations and for different materials. However, there are theoretical challenges in attempting to explain those results. A qualitative framework for explaining all the results is presented.
Ron Naaman, Yossi Paltiel
wiley +1 more source
Magnetoresistance of atomic-scale electromigrated nickel nanocontacts
We report measurements of the electron transport through atomic-scale constrictions and tunnel junctions between ferromagnetic electrodes. Structures are fabricated using a combination of e-beam lithography and controlled electromigration.
Keane, Z. K., Natelson, D., Yu, L. H.
core +1 more source

