Results 51 to 60 of about 31,419 (268)

Optimal Control Drives Ultrafast and Energy‐Efficient Magnetization Switching in Van der Waals Magnets

Advanced Materials, EarlyView.
ABSTRACT The accelerating expansion of data‐centric technologies is sharply increasing the energy burden of information storage, placing unprecedented pressure on the efficiency of magnetic switching. Conventional field‐driven reversal, once the foundation of magnetic memory, has become impractical in modern architectures due to its high energy cost ...
Mohammad H. Badarneh, PeiYu Cai, Elton J. G. Santos   +2 more
wiley   +1 more source

Magnetoresistance and ion bombardment induced magnetic patterning [PDF]

, 2008
Höink V. Magnetoresistance and ion bombardment induced magnetic patterning. Bielefeld (Germany): Bielefeld University; 2008.In this thesis the combination of the magnetic patterning of the unidirectional anisotropy and the tunnel magnetoresistance effect
Höink, Volker
core  

Evidence of weak Anderson localization revealed by the resistivity, transverse magnetoresistance and Hall effect measured on thin Cu films deposited on mica

Scientific Reports, 2021
We report the resistivity of 5 Cu films approximately 65 nm thick, measured between 5 and 290 K, and the transverse magnetoresistance and Hall effect measured at temperatures 5 K 
Eva Díaz, Guillermo Herrera, Simón Oyarzún, Raul C. Munoz   +3 more
doaj   +1 more source

Measuring the Hall Effect in Hysteretic Materials

Advanced Materials, EarlyView.
The authors highlight common pitfalls in measuring the Hall effect: in hysteretic magnets, improper data processing can create signals that look exotic but are not real. This Perspective explains the origin of these artifacts and presents practical measurement strategies that help researchers identify reliable Hall responses in complex magnetic ...
Jaime M. Moya, Anthony Voyemant, Sudipta Chatterjee, Scott B. Lee, Grigorii Skorupskii, Connor J. Pollak, Leslie M. Schoop   +6 more
wiley   +1 more source

Specific features of temperature dependence of colossal and tunneling magnetoresistance in manganite films

Российский технологический журнал
Objectives. This work aims to theoretically and experimentally investigate the specific features of magnetoresistance temperature dependence in nanostructured films of doped manganites.
T. N. Bakhvalova, A. N. Yurasov, M. M. Yashin, V. A. Bessonova   +3 more
doaj   +1 more source

Why Is the Mechanism Underlying the Chiral‐Induced Selectivity Effect Still Challenging?

Advanced Materials, EarlyView.
The chiral‐induced spin selectivity (CISS) effect is observed in many experimental configurations and for different materials. However, there are theoretical challenges in attempting to explain those results. A qualitative framework for explaining all the results is presented.
Ron Naaman, Yossi Paltiel
wiley   +1 more source

Weak In‐Plane Ferromagnetism and Electronic Nematicity in the Distorted Triple‐Q Magnetic Phase of Co1/3TaS2

Advanced Materials, EarlyView.
Co1/3TaS2${\rm Co}_{1/3}{\rm TaS}_{2}$ hosts a triple‐Q noncoplanar antiferromagnetic state with coexisting Z3${\rm Z}_3$ electronic nematicity. We report rotational hysteresis observed in both magnetoresistance and magnetic torque, revealing strongly pinned in‐plane weak ferromagnetic moments in the triple‐Q phase and the magnetism‐driven nature of ...
Joonyoung Choi, Woonghee Cho, Pyeongjae Park, Woun Kang, Je‐Geun Park, Younjung Jo   +5 more
wiley   +1 more source

Investigation of carbon nanotube quantum dots connected to ferromagnetic leads [PDF]

, 2015
The implementation of ferromagnetic contacts in complex nanoelectronic devices, e.g. in spin-valves bears great potential for applications and fundamental investigations. Spin-valves are structures with two magnetic contacts and a non-magnetic medium (
Samm, Julia
core   +1 more source

Silicon spin diffusion transistor: materials, physics and device characteristics

, 2005
The realisation that eaveryday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on GMR and tunnel magnetoresistance, the technology has ...
Tiusan, C, C.V. Tiusan, Gregg, John, S.M. Thompson, Ensell, G, Thompson, SM, Thompson, S M, Gregg, J F, Dennis, CL, Tiusan, CV, Ensell, GJ, Gregg, JF, C.L. Dennis, J.F. Gregg, G.J. Ensell, Dennis, C L   +15 more
core   +2 more sources

Magnetoresistance effect in a vertical spin valve fabricated with a dry-transferred CVD graphene and a resist-free process

Materials Research Express, 2020
One of the most prominent and effective applications of graphene in the field of spintronics is its use as a spacer layer between ferromagnetic metals in vertical spin valve devices, which are widely used as magnetic sensors.
Pradeep Raj Sharma, Praveen Gautam, Jungtae Nam, Keun Soo Kim, Hwayong Noh   +4 more
doaj   +1 more source