Results 31 to 40 of about 31,419 (268)

Anisotropic Magnetoresistance of Gamnas:Be

Semiconductor Physics, Quantum Electronics and Optoelectronics, 2023
The effect of co-doping with Be on the magnetic anisotropy in Ga0.972Mn0.028As epitaxial layers has been studied by magnetoresistance measurements. Co-doping with Be has been shown to lead to reorientation of both easy and hard magnetic axes in GaMnAs.
Parchinskiy, P.B., Gazizulina, A.S., Nasirov, A.A., Yuldashev, Sh.U.   +3 more
openaire   +2 more sources

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

Advanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo, Xiaotao Wang, Guannan Mu, Proloy Taran Das, Igor Veremchuk, Conrad Schubert, Aaron D. Cross, Yevhen Zabila, Xuan Peng, Larysa Baraban, Denys Makarov   +10 more
wiley   +1 more source

2D transport and weak antilocalization effect in topological semimetal PtBi2 nanoflakes

AIP Advances
The striking anisotropic magnetoresistance and linear magnetoresistance observed in topological semimetals have attracted immense attention owing to their potential in magnetoresistance devices. We investigated the magnetotransport properties of trigonal
Ankang Zhu, Cheng Wang, Lei Tong, Di Liu, Li Xu, Yu Zhou, Hui Gao, Li Li, Qingqing Wang, Li Wang, Hao Gong   +10 more
doaj   +1 more source

Architecture‐Driven Functional Coupling in Vertically Aligned Nanocomposites

Advanced Functional Materials, EarlyView.
Vertically aligned nanocomposites define a growth‐engineered architecture in which vertical interfaces, strain fields, defect pathways, and phase connectivity are created simultaneously. This review shows how these architectural features couple ferroic, optical, ionic, electrochemical, and device responses, establishing design rules and open challenges
Md Shatil Islam‐Shanto, Javier Zamudio‐García, Abraham Sánchez‐Caballero, David Marrero‐López, Vincenzo Esposito   +4 more
wiley   +1 more source

Spin splitting and electric field modulated electron-hole pockets in antimonene nanoribbons

npj Quantum Materials, 2017
One-dimensional nanoribbons: A platform for probing exotic magnetoresistance Electrically-tunable electron-hole pockets could make antimonene nanoribbons a platform for probing unusual magnetoresistance effects.
Yan Song, Xiaocha Wang, Wenbo Mi
doaj   +1 more source

Current‐Driven Chirality Detection of Magnetic Textures in Cylindrical Nanowires

Advanced Functional Materials, EarlyView.
Current‐assisted anisotropic magnetoresistance measurements in individual Ni/Au cylindrical nanowires enable detection of vortex chirality near Au segments and selective magnetic reversal in defined wire sections at magnetic fields lower than the propagation field. This approach provides a simple, cost‐effective, and non‐invasive method for probing and
Javier Rial, Alejandro Rivelles, Sofia Caspani, Célia T. Sousa, Rodrigo Guedas, José Luis Prieto, Mariana P. Proença   +6 more
wiley   +1 more source

Design, fabrication, and characterization of magnetic nanostructures

, 2008
For several years, thin films of ferromagnetic materials with metallic spacer layers showing giant magnetoresistance (GMR) were the technological basis used in the read-heads of hard disk drives. Similarly, tunnelling magnetoresistance (TMR), which is an
Claudio Gonzalez, David
core   +2 more sources

Mesoscopic tunneling magnetoresistance [PDF]

Physical Review B, 2001
5 pages, 3 eps figures included using epsf.sty. Revised text and improved notation, fig.
Usaj, Gonzalo, Baranger, Harold. U.
openaire   +2 more sources

Magneto‐Ionic Devices With Polymer‐Based Electrolytes

Advanced Functional Materials, EarlyView.
Polymer electrolytes are introduced for magneto‐ionic devices based on hydroxide and hydrogen ions. The magneto‐ionic effect results in a pronounced voltage‐controlled variation of coercivity in both devices. The switching speed is in the range of 100 ms.
Markus Gößler, Richard Weber, Michael Sommer, Karin Leistner   +3 more
wiley   +1 more source

Low-resistance spin-dependent tunnel junctions with HfAlOx barriers for high-density recording-head application [PDF]

, 2002
Spin-dependent tunnel junctions with the structure (Ta 70 /spl Aring//NiFe 70 /spl Aring//MnIr 80 /spl Aring//CoFe 35 /spl Aring//HfAlO/sub x//CoFe 35 /spl Aring//NiFe 40 /spl Aring//TiW(N) 150 /spl Aring/) were fabricated on top of 600-/spl Aring/-thick
Snoeck, E., Cuadra, J., Wang, Jianguo, Batlle Gelabert, Xavier, Freitas, P. P.   +4 more
core   +1 more source