Results 31 to 40 of about 5,980 (228)
New Journal of Physics, 2016 Tunneling magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal invariant ...
Zhongbo Yan, Shaolong Wan
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Rapid Fabrication of Self‐Propelled and Steerable Magnetic Microcatheters for Precision Medicine
Advanced Materials, EarlyView.A rapid Joule heating fabrication method for the production of self‐propelling, adaptive microcatheters, with tunable stiffness and integrated microfluidic channels is presented. Demonstrated through three microrobotic designs, including a steerable guiding catheter, an untethered wave‐crawling TubeBot, and a distal‐end propelled microcatheter, it was ...
Zhi Chen +5 more
wiley +1 more source
Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr
Advanced Materials, EarlyView.Biaxial compressive strain significantly enhances magnetoresistance and critical saturation fields in thin flakes of the 2D magnet CrSBr, along all three crystallographic axes. First‐principles calculations link these effects to strain‐induced increases in exchange interactions and magnetic anisotropy.
Eudomar Henríquez‐Guerra +19 more
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Advanced Materials, EarlyView.Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam +6 more
wiley +1 more source
Observation of Linear Magnetoresistance in MoO2
NanomaterialsMagnetoresistance, the change in resistance with applied magnetic fields, is crucial to the magnetic sensor technology. Linear magnetoresistance has been intensively studied in semimetals and semiconductors.
Yulong Su +3 more
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Advanced Materials, EarlyView.ABSTRACT The accelerating expansion of data‐centric technologies is sharply increasing the energy burden of information storage, placing unprecedented pressure on the efficiency of magnetic switching. Conventional field‐driven reversal, once the foundation of magnetic memory, has become impractical in modern architectures due to its high energy cost ...
Mohammad H. Badarneh +2 more
wiley +1 more source
Extrinsic magnetoresistance in semiconductors [PDF]
Physica B: Condensed Matter, 1995 Abstract The extrinsic magnetoresistance of a metallically doped InSb sample has been investigated. At high temperatures, where no magnetoquantum oscillations occur, an additional linear magnetoresistance (LMR) arising from a difference in the Hall voltages can be observed.
Zeitler, U., Jansen, A.G.M.
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Measuring the Hall Effect in Hysteretic Materials
Advanced Materials, EarlyView.The authors highlight common pitfalls in measuring the Hall effect: in hysteretic magnets, improper data processing can create signals that look exotic but are not real. This Perspective explains the origin of these artifacts and presents practical measurement strategies that help researchers identify reliable Hall responses in complex magnetic ...
Jaime M. Moya +6 more
wiley +1 more source
Mesoscopic tunneling magnetoresistance [PDF]
Physical Review B, 2001 5 pages, 3 eps figures included using epsf.sty. Revised text and improved notation, fig.
Usaj, Gonzalo, Baranger, Harold. U.
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Российский технологический журналObjectives. This work aims to theoretically and experimentally investigate the specific features of magnetoresistance temperature dependence in nanostructured films of doped manganites.
T. N. Bakhvalova +3 more
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