Effect of Cr Dopingin Mn Site on Low Field Magnetoresistance of Manganite La0.7Ca0.3MnO3
Journal of Harbin University of Science and Technology, 2019 In order to study the magnetoresistance effect of perovskite manganite in low magnetic fields, manganite polycrystalline samples La0.7Ca0.3Mn1-xCrxO3(x=0, 0.1) were prepared by solid-state reaction technique Resistance-temperature curves and ...
ZHANG Guang-yu, LIU Lin-jing
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Engineering of Advanced Materials for High Magnetic Field Sensing: A Review
Sensors, 2023 Advanced scientific and industrial equipment requires magnetic field sensors with decreased dimensions while keeping high sensitivity in a wide range of magnetic fields and temperatures.
Nerija Žurauskienė
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Magnetoresistance of Ge-Si Whiskers in the Vicinity to Metal– Insulator Transition
Фізика і хімія твердого тіла, 2018 The magnetoresistance of GeхSi1-х (x = 0.002 ¸ 0.11) whiskers with an acceptor concentration(Na = 3.1018 ¸ 2.1019 cm-3) near the metal-insulator transition (MIT) was studied at low temperatures (4.2 - 77 K)in magnetic fields up to 14 T.
A. Druzhynin +3 more
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Angular evolution of thickness-related unidirectional magnetoresistance in Co/Pt multilayers
AIP Advances, 2019 We report the magnetoresistance of Co/Pt superlattices having thickness gradients at different orientations relative to an applied current. We measure the magnetoresistance at a fixed field as a function of the out-of-plane field angle, and find a ...
Junseok Oh +4 more
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Large magnetoresistance effect in nitrogen-doped silicon
AIP Advances, 2017 In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating
Tao Wang +6 more
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Interfacial quality to control tunnelling magnetoresistance
Frontiers in Physics, 2022 Theoretically, coherent tunnelling through an MgO barrier can achieve over 1,000% magnetoresistance at room temperature. To date, this has not been demonstrated experimentally.
Atsufumi Hirohata +4 more
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Huge linear magnetoresistance due to open orbits in γ-PtBi_{2}
Physical Review Research, 2020 Some single-crystalline materials present an electrical resistivity which decreases between room temperature and low temperatures at zero magnetic field as in a good metal and switches to a nearly semiconductinglike behavior at low temperatures with the ...
Beilun Wu +3 more
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Large-field magnetoresistance of nanometer scale nickel films grown on molybdenum disulfide
AIP Advances, 2022 The magnetoresistance of thin nickel films grown on molybdenum disulfide was measured in perpendicular magnetic fields as high as 90 kOe. Films with thicknesses of 20 nm provided continuous surfaces for measurement.
Timothy E. Kidd +6 more
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Effect of Annealing on Structural-phase State and Three-layered Film Magnetoresistance Systems Based on Ni and V as well as Ni and Au or Ag [PDF]
Журнал нано- та електронної фізики, 2016 The structural-phase state and magnetoresistive properties of three-layer film systems based on Ni and V and Ni and Au or Ag total thickness d = 25-55 nm thick steel spacer ds = 5 nm. Experimentally tested the influence of annealing temperatures from 300
T.M. Grychanovs’ka +3 more
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Exchange Field Induced Magnetoresistance in Colossal Magnetoresistance Manganites [PDF]
Physical Review Letters, 2001 Physical Review ...
Krivorotov, I. N. +4 more
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