Results 41 to 50 of about 5,925 (208)

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Measuring the Hall Effect in Hysteretic Materials

Advanced Materials, EarlyView.
The authors highlight common pitfalls in measuring the Hall effect: in hysteretic magnets, improper data processing can create signals that look exotic but are not real. This Perspective explains the origin of these artifacts and presents practical measurement strategies that help researchers identify reliable Hall responses in complex magnetic ...
Jaime M. Moya, Anthony Voyemant, Sudipta Chatterjee, Scott B. Lee, Grigorii Skorupskii, Connor J. Pollak, Leslie M. Schoop   +6 more
wiley   +1 more source

Theory of Tunnel Magnetoresistance

Journal of the Magnetics Society of Japan, 1998
We present a review of theories of tunnel magnetoresistance (TMR) putting an emphasis on the role of electron scattering due to randomness. We adopt the linear response theory and generalize the conductance formula to calculate the electrical conductance in layered structures.
Inoue, Jun-ichiro, Itoh, Hiroyoshi
openaire   +3 more sources

Why Is the Mechanism Underlying the Chiral‐Induced Selectivity Effect Still Challenging?

Advanced Materials, EarlyView.
The chiral‐induced spin selectivity (CISS) effect is observed in many experimental configurations and for different materials. However, there are theoretical challenges in attempting to explain those results. A qualitative framework for explaining all the results is presented.
Ron Naaman, Yossi Paltiel
wiley   +1 more source

Observation of Linear Magnetoresistance in MoO₂

Nanomaterials
Magnetoresistance, the change in resistance with applied magnetic fields, is crucial to the magnetic sensor technology. Linear magnetoresistance has been intensively studied in semimetals and semiconductors.
Yulong Su, Zhibin He, Ruizheng Jiang, Jundong Zhang   +3 more
doaj   +1 more source

Weak In‐Plane Ferromagnetism and Electronic Nematicity in the Distorted Triple‐Q Magnetic Phase of Co1/3TaS2

Advanced Materials, EarlyView.
Co1/3TaS2${\rm Co}_{1/3}{\rm TaS}_{2}$ hosts a triple‐Q noncoplanar antiferromagnetic state with coexisting Z3${\rm Z}_3$ electronic nematicity. We report rotational hysteresis observed in both magnetoresistance and magnetic torque, revealing strongly pinned in‐plane weak ferromagnetic moments in the triple‐Q phase and the magnetism‐driven nature of ...
Joonyoung Choi, Woonghee Cho, Pyeongjae Park, Woun Kang, Je‐Geun Park, Younjung Jo   +5 more
wiley   +1 more source

Ferromagnetism of Molecular Beam Epitaxy‐grown Ultra‐thin Cr2Ge2Te6 Films Down to the Monolayer Limit on Si Substrates

Advanced Materials, EarlyView.
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji, Ruixuan Liu, Tianchen Zhu, Yang Chen, Yitian Tong, Jinxuan Liang, Yunhe Bai, Yunyi Zang, Zuhan Geng, Fangting Chen, Xiyu Hong, Jiatong Zhang, Luyi Yang, Qi‐Kun Xue, Ke He, Xiao Feng   +15 more
wiley   +1 more source

Light-induced magnetoresistance in solution-processed planar hybrid devices measured under ambient conditions

Beilstein Journal of Nanotechnology, 2017
We report light-induced negative organic magnetoresistance (OMAR) measured in ambient atmosphere in solution-processed 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) planar hybrid devices with two different device architectures.
Sreetama Banerjee, Daniel Bülz, Danny Reuter, Karla Hiller, Dietrich R. T. Zahn, Georgeta Salvan   +5 more
doaj   +1 more source

Magnetoresistance effect in a vertical spin valve fabricated with a dry-transferred CVD graphene and a resist-free process

Materials Research Express, 2020
One of the most prominent and effective applications of graphene in the field of spintronics is its use as a spacer layer between ferromagnetic metals in vertical spin valve devices, which are widely used as magnetic sensors.
Pradeep Raj Sharma, Praveen Gautam, Jungtae Nam, Keun Soo Kim, Hwayong Noh   +4 more
doaj   +1 more source

Magnetic‐Field Modulation of Charge Transport in Non‐Fullerene Semiconductors for Enhanced Hydrogen Evolution

Advanced Materials Interfaces, EarlyView.
ABSTRACT This study demonstrates that weak magnetic fields (16–40 mT) increase the efficiency of the hydrogen evolution reaction (HER) in electrocatalysts based on non‐fullerene acceptor (NFA) derivatives IT‐4Cl and Y6. Electrochemical measurements reveal that the application of the magnetic field reduces the onset potential and increases the current ...
João Paulo Araujo Souza, Marlus Koehler, John Fredy Ricardo Marroquin, Jorlandio Francisco Felix, Thanh‐Tuân Bui, Paulo Eduardo Narcizo de Souza, Sebastião William da Silva, Luana Wouk   +7 more
wiley   +1 more source