Results 111 to 120 of about 60,446 (233)

Features of Modeling of the Magnetorefractive Effect in Multilayered Metal Nanostructures

Российский технологический журнал, 2019
The magnetorefractive effect (MRE) is important and interesting from both fundamental and practical points of view. This effect consists in a change in the reflection coefficient or the passage of an electromagnetic wave from magnetized structures with ...
A. A. Mokrushina, A. N. Yurasov
doaj   +1 more source

Flexible Memory: Progress, Challenges, and Opportunities

Advanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan, Sen Chen, Minghui Guo, Ziliang Cui, Yujie Du, Jing Liu   +5 more
wiley   +1 more source

Improved Magnetoresistance of Tungsten Telluride and Silver Telluride Composites

Advanced Electronic Materials
Tungsten telluride (WTe2) and silver telluride (Ag2Te) are recently developed magnetoresistive materials, and bulk composites of these materials would be extremely advantageous in improving the magnetoresistance characteristics of the individual ...
Mingxing Cao, Zhigao Zhang, Jian He, Ruifen Hou, Wenjie Gong, Zhihong Wang   +5 more
doaj   +1 more source

Negative Magnetoresistance in the Nearest-neighbor Hopping Conduction

, 1997
We propose a size effect which leads to the negative magnetoresistance in granular metal-insulator materials in which the hopping between two nearest neighbor clusters is the main transport mechanism.
Belevtsev B. I., Böttger H., Landau L. D., Maksym P. A., Nguyen V. L., Nguyen V. L., Nguyen V. L., Pakhomov A. B., Pakhomov A. B., Ping Sheng, Pippard A. B., Shapir Y., Sheng P., Shklovskii B. I., Shklovskii B. I., X. C Xie, X. R Wang   +16 more
core   +3 more sources

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Machine Learning‐Assisted Second‐Order Perturbation Theory for Chemical Potential Correction Toward Hubbard U Determination

Advanced Intelligent Discovery, EarlyView.
In this work, the Doubao large language model (LLM) is involved in the formula derivation processes for Hubbard U determination regarding the second‐order perturbations of the chemical potential. The core ML tool is optimized for physical domain knowledge, which is not limited to parameter prediction but rather serves as an interactive physical theory ...
Mingzi Sun, Tong Wu, Baian Chen, Zikang Li, Qiuyang Lu, Lu Lu, Hon Ho Wong, Cheuk Hei Chan, Bolong Huang   +8 more
wiley   +1 more source

Enhanced magnetoresistance induced collaboratively by spin and orbital currents

AIP Advances
Orbital currents in light metals or metal oxides without the strong spin–orbit coupling have become an important means to achieve low-power magnetization switching in spin–orbitronic devices.
Shuyi Yang, Jinnan Liu, Huan Liu, Yongji Li, Wei Zhang, Zhongming Zeng, Zhiyong Quan   +6 more
doaj   +1 more source

Device‐Level Implementation of Reservoir Computing With Memristors

Advanced Intelligent Systems, EarlyView.
Reservoir computing (RC) is an emerging computing scheme that employs a reservoir and a single readout layer, which can be actualized in the nanoscale with memristors. As a comprehensive overview, the principles of RC and the switching mechanisms of memristors are discussed, followed by actual demonstrations of memristor‐based RC and the remaining ...
Sunbeom Park, Hyojung Kim, Ho Won Jang
wiley   +1 more source

Feature Disentangling and Combination Implemented by Spin–Orbit Torque Magnetic Tunnel Junctions

Advanced Intelligent Systems, EarlyView.
Spin–orbit torque magnetic tunnel junctions (SOT‐MTJs) enable efficient feature disentangling and integration in image data. A proposed algorithm leverages SOT‐MTJs as true random number generators to disentangle and recombine features in real time, with experimental validation on emoji and facial datasets.
Xiaohan Li, Yingqian Xu, Caihua Wan, Ran Zhang, Meike Hindenberg, Raik Hoffmann, Shiqiang Liu, Tianyi Zhang, Shilong Xiong, Dehao Kong, Jihao Xia, Fangshuo Gao, Zhuyang Nie, Thomas Kämpfe, Guoqiang Yu, Xiufeng Han   +15 more
wiley   +1 more source

Anisotropic magnetoresistance in altermagnetic MnTe

npj Spintronics
Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect.
Ruben Dario Gonzalez Betancourt, Jan Zubáč, Kevin Geishendorf, Philipp Ritzinger, Barbora Růžičková, Tommy Kotte, Jakub Železný, Kamil Olejník, Gunther Springholz, Bernd Büchner, Andy Thomas, Karel Výborný, Tomas Jungwirth, Helena Reichlová, Dominik Kriegner   +14 more
doaj   +1 more source