Results 111 to 120 of about 60,266 (237)

Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles

, 2009
We have studied the electron transport in SiO${}_2$(Co)/GaAs and SiO${}_2$(Co)/Si heterostructures, where the SiO${}_2$(Co) structure is the granular SiO${}_2$ film with Co nanoparticles.
A. A. Abrikosov, A. I. Stognij, A. S. Kyuregyan, B. Chapman, L. V. Lutsev, N. N. Novitskii, V. S. Fomenko, W. A. Harrison, Yu. A. Izyumov, Yu. P. Raizer   +9 more
core   +1 more source

Strain‐Assembled Crystalline SrRuO3 Microtube and Emergent Curvilinear Magnetism

Advanced Science, EarlyView.
The interfacial‐strain assembly based on planar nanomembranes presents a promising approach for constructing novel magnetic microstructures. By employing the perpendicular magnetic anisotropic SrRuO3 freestanding nanomembrane as a model system, we exploit the interfacial strain effect within the crystalline SrTiO3/SrRuO3 bilayer, and successfully ...
Lei Gao, Yuqian Wang, Xiangyu Lyu, Pengyu Liu, Mingtong Zhu, Jin Liu, Mengcheng Li, Ailing Ji, Qinghua Zhang, Lin Gu, Libo Ma, Zexian Cao, Nianpeng Lu   +12 more
wiley   +1 more source

Improved Magnetoresistance of Tungsten Telluride and Silver Telluride Composites

Advanced Electronic Materials
Tungsten telluride (WTe2) and silver telluride (Ag2Te) are recently developed magnetoresistive materials, and bulk composites of these materials would be extremely advantageous in improving the magnetoresistance characteristics of the individual ...
Mingxing Cao, Zhigao Zhang, Jian He, Ruifen Hou, Wenjie Gong, Zhihong Wang   +5 more
doaj   +1 more source

Intrinsic Negative Magnetoresistance and Broadband Photoresponse in Magnetic van der Waals Crystal TaFeTe2

Advanced Science, EarlyView.
2D van der Waals (vdW) materials MM′Te2 with broken symmetry attract great interest for unique magnetic structures and optical‐phonon‐induced phase transitions. We report mechanically exfoliable TaFeTe2 single crystals, exhibiting spin‐glass behavior, intrinsic unsaturated negative magnetoresistance up to 9 T, self‐powered internal photocurrent, and ...
Changcun Li, Jiazhen Wu, Sirong Lu, Lei Liang, Wenying Zhou, Bingke Zhang, Degang Zhao, Fucai Liu   +7 more
wiley   +1 more source

Emergent Spin Fluctuation and Structural Metastability in Self‐Intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ Compounds

Advanced Electronic Materials, EarlyView.
Metastable superstructure and emergent spin fluctuation in self‐intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ ABSTRACT Intercalated van der Waals (vdW) magnetic materials host unique magnetic properties due to the interplay of competing interlayer and intralayer exchange couplings, which depend on the intercalant concentration within the van der ...
Clayton Conner, Ali Sarikhani, Theo Volz, Mathew Pollard, Mitchel Vaninger, Xiaoqing He, Steven Kelley, Jacob Cook, Avinash Sah, John Clark, Hunter Lucker, Cheng Zhang, Paul Miceli, Yew San Hor, Xiaoqian Zhang, Guang Bian   +15 more
wiley   +1 more source

Enhanced magnetoresistance induced collaboratively by spin and orbital currents

AIP Advances
Orbital currents in light metals or metal oxides without the strong spin–orbit coupling have become an important means to achieve low-power magnetization switching in spin–orbitronic devices.
Shuyi Yang, Jinnan Liu, Huan Liu, Yongji Li, Wei Zhang, Zhongming Zeng, Zhiyong Quan   +6 more
doaj   +1 more source

Flexible Memory: Progress, Challenges, and Opportunities

Advanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan, Sen Chen, Minghui Guo, Ziliang Cui, Yujie Du, Jing Liu   +5 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Machine Learning‐Assisted Second‐Order Perturbation Theory for Chemical Potential Correction Toward Hubbard U Determination

Advanced Intelligent Discovery, EarlyView.
In this work, the Doubao large language model (LLM) is involved in the formula derivation processes for Hubbard U determination regarding the second‐order perturbations of the chemical potential. The core ML tool is optimized for physical domain knowledge, which is not limited to parameter prediction but rather serves as an interactive physical theory ...
Mingzi Sun, Tong Wu, Baian Chen, Zikang Li, Qiuyang Lu, Lu Lu, Hon Ho Wong, Cheuk Hei Chan, Bolong Huang   +8 more
wiley   +1 more source

Anisotropic magnetoresistance in altermagnetic MnTe

npj Spintronics
Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect.
Ruben Dario Gonzalez Betancourt, Jan Zubáč, Kevin Geishendorf, Philipp Ritzinger, Barbora Růžičková, Tommy Kotte, Jakub Železný, Kamil Olejník, Gunther Springholz, Bernd Büchner, Andy Thomas, Karel Výborný, Tomas Jungwirth, Helena Reichlová, Dominik Kriegner   +14 more
doaj   +1 more source