Results 11 to 20 of about 60,393 (180)
Proceedings of the National Academy of Sciences, 2013 Scientists have known for more than 150 years that a magnetic field can change electrical resistance in a material, ever since Scottish physicist William Thomson (Lord Kelvin) first measured the effect in iron. That phenomenon, magnetoresistance, can be tweaked according to the strength and orientation of the field, and has made it possible for ...
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Mesoscopic tunneling magnetoresistance [PDF]
Physical Review B, 2001 5 pages, 3 eps figures included using epsf.sty. Revised text and improved notation, fig.
Usaj, Gonzalo, Baranger, Harold. U.
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Molecular anisotropic magnetoresistance [PDF]
Physical Review B, 2015 Using density functional theory calculations, we demonstrate that the effect of anisotropic magnetoresistance (AMR) can be enhanced by orders of magnitude with respect to conventional bulk ferromagnets in junctions containing molecules sandwiched between ferromagnetic leads.
Otte, Fabian +2 more
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Exchange Field Induced Magnetoresistance in Colossal Magnetoresistance Manganites [PDF]
Physical Review Letters, 2001 Physical Review ...
Krivorotov, I. N. +4 more
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Engineering of Advanced Materials for High Magnetic Field Sensing: A Review
Sensors, 2023 Advanced scientific and industrial equipment requires magnetic field sensors with decreased dimensions while keeping high sensitivity in a wide range of magnetic fields and temperatures.
Nerija Žurauskienė
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Scientific Reports, 2017 Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-current, I dc .
R. L. Samaraweera +5 more
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Effect of Cr Dopingin Mn Site on Low Field Magnetoresistance of Manganite La0.7Ca0.3MnO3
Journal of Harbin University of Science and Technology, 2019 In order to study the magnetoresistance effect of perovskite manganite in low magnetic fields, manganite polycrystalline samples La0.7Ca0.3Mn1-xCrxO3(x=0, 0.1) were prepared by solid-state reaction technique Resistance-temperature curves and ...
ZHANG Guang-yu, LIU Lin-jing
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Magnetoresistance of Ge-Si Whiskers in the Vicinity to Metal– Insulator Transition
Фізика і хімія твердого тіла, 2018 The magnetoresistance of GeхSi1-х (x = 0.002 ¸ 0.11) whiskers with an acceptor concentration(Na = 3.1018 ¸ 2.1019 cm-3) near the metal-insulator transition (MIT) was studied at low temperatures (4.2 - 77 K)in magnetic fields up to 14 T.
A. Druzhynin +3 more
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Interfacial quality to control tunnelling magnetoresistance
Frontiers in Physics, 2022 Theoretically, coherent tunnelling through an MgO barrier can achieve over 1,000% magnetoresistance at room temperature. To date, this has not been demonstrated experimentally.
Atsufumi Hirohata +4 more
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Large magnetoresistance effect in nitrogen-doped silicon
AIP Advances, 2017 In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating
Tao Wang +6 more
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