Results 251 to 260 of about 13,024,848 (326)
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, 2021
Chemical mechanical polishing (CMP) is one of the most powerful technologies to achieve global planarization for precision machining of the wafer surface. CMP contributes to intelligent manufacturing in Industry 4.0.
Jiusi Zhang +3 more
semanticscholar +1 more source
Chemical mechanical polishing (CMP) is one of the most powerful technologies to achieve global planarization for precision machining of the wafer surface. CMP contributes to intelligent manufacturing in Industry 4.0.
Jiusi Zhang +3 more
semanticscholar +1 more source
A novel material removal rate model based on single grain force for robotic belt grinding
, 2021Modelling of grinding force and material removal rate (MRR) has been widely investigated for wheel grinding which often has a preset cutting depth, but is rather lacking for sand belt grinding.
Lufeng Li +4 more
semanticscholar +1 more source
Material Removal Rate in Flat Lapping
Journal of Manufacturing Processes, 1999Abstract Lapping is a critical technology in a number of precision manufacturing applications. Previous research has focused primarily on mechanisms of material removal and the effects of input variables on material removal rate (MRR). The behavior of MRR in lapping processes when the standard input variables-workpiece pressure, relative velocity of ...
Xiaobin Le, M.L. Peterson
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Study of Material Removal Rate Process Parameter in WEDM
International Journal of Materials Manufacturing and Sustainable Technologies, 2022Wire cut Electrical Discharge Machining is known as nontraditional machining process. It has broad application in complex part or geometry machining. It is known as a non-contact process. The main objective of this research work is to investigate the influence of process parameters of Wire cut Electrical-Discharge Machining in material removal rate ...
Amit Kumar +4 more
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Ablative material removal with a preset removal rate or volume or depth [PDF]
, 2008 The present invention includes a method of surgical material removal from a body by optical-ablation with controlled pulse energy from an amplifier including inputting an ablation-threshold-pulse-energy-for-material-being-ablated signal; controlling the ...
STOLTZ RICHARD, DELFYETT PETER J
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Material removal rate in polishing anisotropic monocrystalline materials for optoelectronics
Journal of Superhard Materials, 2016Based on investigations of the mechanism of precision surface formation in workpieces of anisotropic monocrystalline materials for optoelectronics, a generalized model of material removal in polishing with suspensions of polishing powders has been constructed.
O. Yu. Filatov +4 more
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Assist control for finishing process considering material removal rate
2011 15th International Conference on Advanced Robotics (ICAR), 2011In high-variety low-volume manufacturing, parts are typically processed by handwork in order to minimize production cost and lead time. However, when a precise finishing process is required, handwork has problems of processing error and insufficient processing accuracy.
Ken'ichi Yano +2 more
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, 2020
Although the pressure and shear stress are motivations of the material removal of optical component surface in magnetorheological finishing, pressure is often ignored as the shear stress is the dominant factor in the removal rate prediction. To develop a
Jia-Bao Liu +5 more
semanticscholar +1 more source
Although the pressure and shear stress are motivations of the material removal of optical component surface in magnetorheological finishing, pressure is often ignored as the shear stress is the dominant factor in the removal rate prediction. To develop a
Jia-Bao Liu +5 more
semanticscholar +1 more source
The Material Removal Rate of Metal Polishing Process
2009The objective of this research is to better understand the mechanisms of material removal in the polishing process. This study is aimed to establish a material removal rate model for metal polishing to predict the result of metal polishing process.
Yeau-Ren Jeng, Pay-Yau Huang
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Chemical Effect on the Material Removal Rate in the CMP of Silicon Wafers
Advanced Materials Research, 2010This paper investigates the effects of some chemical factors on the material removal rate (MRR) in chemo-mechanical polishing (CMP) of Si (100) wafers. The CMP was carried out in alkaline slurry using alumina and ceria particles with hydrogen peroxide.
Y.G. Wang, L.C. Zhang, A. Biddut
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