Results 231 to 240 of about 5,069,691 (283)

Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki   +7 more
wiley   +1 more source

Adaptive 4D‐Printed Vascular Stents With Low‐Temperature‐Activated and Intelligent Deployment

open access: yesAdvanced Functional Materials, EarlyView.
Microarchitected coronary artery stents were fabricated using a polycaprolactone (PCL)‐based shape memory polymer (SMP) composite via projection micro‐stereolithography (PµSL) 4D printing. By incorporating diethyl phthalate (DEP) as a plasticizer, the thermal transition temperature (Ttran) was modulated to about 37°C, enabling rapid and autonomous ...
Yannan Li   +12 more
wiley   +1 more source

Structure–Transport–Ion Retention Coupling for Enhanced Nonvolatile Artificial Synapses

open access: yesAdvanced Functional Materials, EarlyView.
Nitrogen incorporation into the conjugated backbone of donor–acceptor polymers enables efficient charge transfer and deep ion embedding in organic electrochemical synaptic transistors (OESTs). This molecular‐level design enhances non‐volatile synaptic properties, providing a new strategy for developing high‐performance and reliable neuromorphic devices.
Donghwa Lee   +5 more
wiley   +1 more source

Understanding and Tuning Mobile Interfaces in Ferroelectric Hf0.5Zr0.5O2 Thin Films in Relation to Microstructure

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker   +11 more
wiley   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

open access: yesAdvanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak   +14 more
wiley   +1 more source

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