Results 91 to 100 of about 3,154,535 (299)

Enhancing the Capacitive Memory Window of HZO FeCap Through Nanolaminate Stack Design

Advanced Electronic Materials
Recently, a capacitive array based on Hf0.5Zr0.5O2 (HZO) has been proposed as an alternative to conventional resistive crossbar arrays for compute‐in‐memory (CIM). This array operates through a capacitive memory window (CMWε).
Mostafa Habibi, Alireza Kashir, Seungyeol Oh, Hojung Jang, Hyunsang Hwang   +4 more
doaj   +1 more source

Implantable Ionic Memristors Based on Natural Polymer Heterojunctions

Advanced Functional Materials, EarlyView.
We report an implantable natural polymer‐based ionic memristor composed of hyaluronic acid, chitosan, and PDMS. The device achieved 98.94% accuracy in MNIST classification while reducing training time by 36.8% compared with a conventional artificial neural network (ANN).
Dong‐yup Lee, Byung Ik Park, Gihyeon Yim, Hyunjae Yoo, Sangjun Ma, Jundong Park, Jeong‐Yun Sun   +6 more
wiley   +1 more source

A self-rectifying HfO x-based unipolar RRAM with Nisi electrode

, 2012
10.1109/LED.2011.2181971IEEE Electron Device Letters334585 ...
Kang, J.F., Zhu, W. G., Yeo, Y.C., Tran, Xuan Anh, Liu, W.J., Gao, B., Nguyen, B. Y., Kang, J. F., Gao, Bin, Yeo, Y. C., Wang, Z.R., Tran, X.A., Yu, H.Y., Tran, X. A., Yu, H. Y., Nguyen, B.Y., Liu, W. J., Wang, Z. R., Li, M.F., Li, M. F., Yu, Hongyu, Zhu, W.G., Fang, Z.   +22 more
core   +1 more source

Design Flash Memory Programmer Device [PDF]

, 2006
The purpose of this research is to design a flash memory programmer device consisting of a set of Integrated Circuits (ICs) to meet the needs. These circuits have been connected according to operations (defining, reading, programming and erasing) run on ...
Dhuha Abdullah, Reyath Mahmood
core   +1 more source

Double-Forming Mechanism of TaO_x-Based Resistive Memory Device and Its Synaptic Applications. [PDF]

Materials (Basel), 2023
Ju D, Kim S, Lee S, Kim S.
europepmc   +1 more source

Embedded Ferroelectric Nanoclusters Can Drive Polarization Reversal in a Non‐Ferroelectric Polar Film via the Proximity Effect

Advanced Functional Materials, EarlyView.
Ferroelectric nanoclusters create local internal fields in a normally non‐switchable polar film because of polarization mismatch at their interfaces. That field opposes polarization in the regions with larger polarization and reinforces polarization in the regions with smaller polarization.
Anna N. Morozovska, Eugene A. Eliseev, Sergei V. Kalinin, Long‐Qing Chen, Dean R. Evans, Venkatraman Gopalan   +5 more
wiley   +1 more source

Non-Electroneutrality Generated by Bacteriorhodopsin-Incorporated Membranes Enhances the Conductivity of a Gelatin Memory Device. [PDF]

Gels, 2023
Chiu UT, Lee BF, Ko LN, Yang CS, Chao L.
europepmc   +1 more source

Biodegradable and Biocompatible Functional Polymers for Biomedical Applications

Advanced Functional Materials, EarlyView.
Biodegradable and biocompatible functional polymers integrate electrical, mechanical, and stimuli‐responsive functionalities while enabling programmed degradation under physiological conditions. This review introduces recent advances in conductive, shape‐memory, self‐healing, photocurable, and adhesive polymer systems, emphasizing material design ...
Won Bae Han, Shuvra Mondal, Sungkeun Han, Chan‐Hwi Eom, Venkata Ramesh Naganaboina, Suk‐Won Hwang   +5 more
wiley   +1 more source

The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfO_x/W Bilayer-Structured Memory Device. [PDF]

Nanomaterials (Basel), 2023
Noh M, Ju D, Cho S, Kim S.
europepmc   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source