Results 111 to 120 of about 3,154,535 (299)

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Highly Parallel Regular Expression Matching Using a Real Processing-in-Memory System

IEEE Access
Processing-in-Memory (PIM) is an emerging computing paradigm exploiting a cutting-edge memory device (PIM device) that integrates hundreds to thousands of processing units with the memory modules. A data-intensive application running in a host system can
Jeonghyeon Joo, Hyojune Kim, Hyuck Han, Eul Gyu Im, Sooyong Kang   +4 more
doaj   +1 more source

Improved Uniformity of TaO_x-Based Resistive Switching Memory Device by Inserting Thin SiO₂ Layer for Neuromorphic System. [PDF]

Materials (Basel), 2023
Ju D, Kim S, Jang J, Kim S.
europepmc   +1 more source

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

High Performance Network Worm Detection Engine Using Memory Efficient Circular Buffer. [PDF]

, 2007
This paper presents the implementation of a memory efficient circular buffer to ensure a high performance network worm detection engine.
Pasha, Muhammad Fermi, Budiarto, Rahmat, Manasrah, Ahmad, Supramaniam, Saravanesh, Ramadass, Sureswaran   +4 more
core   +1 more source

Quantum memory device

, 2006
A photon is absorbed by a quantum dot memory device thus generating an exciton trapped by the quantum dot. One of the carriers of the exciton is removed from the quantum dot by applying a suitable bias whereas the other carrier of the exciton is ...
Young, Robert James, Shields, Andrew J.
core   +4 more sources

HfO₂-based ferroelectric thin film and memory device applications in the post-Moore era: A review. [PDF]

Fundam Res, 2023
Liao J, Dai S, Peng RC, Yang J, Zeng B, Liao M, Zhou Y.   +6 more
europepmc   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Low interface state density and large capacitive memory window using RF sputtered NiO nanoparticles decorated MgZnO thin film

Scientific Reports
NiO nanoparticles (NPs) synthesized using glancing angle deposition (GLAD) technique over MgZnO thin film was used to design a novel memory device. The NiO NPs with average diameter ~ 9.5 nm was uniformly distributed over the MgZnO thin film surface. The
Mritunjay Kumar, Jay Chandra Dhar
doaj   +1 more source

Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri₂ Perovskite. [PDF]

Materials (Basel), 2021
Ke W, Yang X, Liu T.
europepmc   +1 more source