Results 131 to 140 of about 3,154,535 (299)

Clinton League members looking at Memory Book

, 1946
Photograph showing charter members of the Clinton League looking at group's "Memory Book" covering the years 1912-1938. The women are identified as Mrs. Pierson, Mrs. Cottrell and Mrs. H.C. Marshall. This image was included in a "Memory Book" compiled by

core  

An Organic/Inorganic Nanomaterial and Nanocrystal Quantum Dots-Based Multi-Level Resistive Memory Device. [PDF]

Nanomaterials (Basel), 2021
Kim SW, Kwon J, Lee JS, Kang BH, Lee SW, Jung DG, Lee JY, Han M, Kim OG, Saianand G, Jung D.   +10 more
europepmc   +1 more source

Disorder‐Broadened Topological Hall Phase and Anomalous Hall Scaling in FeGe

Advanced Functional Materials, EarlyView.
By systematically introducing defects into FeGe via ion‐beam modification, we demonstrate that disorder broadens the temperature regime over which the topological Hall effect ‐ a signature of skyrmions or other chiral textures — appears, while also increasing its magnitude.
Chaman Gupta, Chris Matsumura, Hongbin Yang, Sarah Edwards, Rebeca M. Gurrola, Jiun‐Haw Chu, Hanjong Paik, Yongqiang Wang, David A. Muller, Robert Streubel, Tzu‐Ming Lu, Serena Eley   +11 more
wiley   +1 more source

A Comparative Study of Digital Memristor‐Based Processing‐In‐Memory from a Device and Reliability Perspective

Advanced Electronic Materials
As data‐intensive applications increasingly strain conventional computing systems, processing‐in‐memory (PIM) has emerged as a promising paradigm to alleviate the memory wall by minimizing data transfer between memory and processing units.
Thomas Neuner, Henriette Padberg, Lior Kornblum, Eilam Yalon, Pedram Khalili Amiri, Shahar Kvatinsky   +5 more
doaj   +1 more source

Correction: Chen et al. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. Materials 2022, 15, 3640. [PDF]

Materials (Basel), 2022
Chen YY, Lin SJ, Chang SY.
europepmc   +1 more source

Discovery of Energy‐Localized Trap States via Opto‐Electrical Spectroscopy in UWBG Perovskite La:SrSnO3 FETs

Advanced Functional Materials, EarlyView.
Combined UV–vis transmittance and wavelength‐dependent photo‐assisted DC I–V analyses reveal defect‐induced optical instability and a high density of deep donor‐like subgap traps in La‐doped SrSnO3. The resulting MOSFET achieves one of the highest on/off ratios reported for ABO3 perovskite devices, demonstrating the promise of stannate perovskites as ...
Sojin Jung, Junghyun Koo, Hongseung Lee, Donghwan Kim, Dongho Won, Weideng Sun, Jaewook Yoo, Minah Park, Seohyeon Park, Seongbin Lim, Joonsung Lee, Sungjune Park, Sangmoon Yoon, Tae Wan Kim, Bharat Jalan, Gang Qiu, Kiyoung Lee, Hagyoul Bae   +17 more
wiley   +1 more source

Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO₂/WTe₂) Exhibiting Stable Resistive Switching. [PDF]

Materials (Basel), 2021
Dastgeer G, Afzal AM, Aziz J, Hussain S, Jaffery SHA, Jaffery SHA, Kim DK, Imran M, Assiri MA.   +8 more
europepmc   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Microwave quantum memcapacitor effect

Communications Materials
Developing the field of neuromorphic quantum computing necessitates designing scalable quantum memory devices. Here, we propose a superconducting quantum memory device in the microwave regime, termed a microwave quantum memcapacitor.
Xinyu Qiu, Shubham Kumar, Francisco A. Cárdenas-López, Gabriel Alvarado Barrios, Enrique Solano, Francisco Albarrán-Arriagada   +5 more
doaj   +1 more source

Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs₂AgBiBr₆-Based Memory Device. [PDF]

Nanomaterials (Basel), 2021
Lv F, Zhong T, Qin Y, Qin H, Wang W, Liu F, Kong W.   +6 more
europepmc   +1 more source