Results 121 to 130 of about 3,154,535 (299)
Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices
Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig +3 more
wiley +1 more source
Functional fatigue in NiTi shape memory alloy wires - A comparative study [PDF]
The functional fatigue behaviour of two near equi-atomic NiTi shape memory alloy wires obtained from different sources were evaluated. Results showed that though the wires had similar transformation temperatures and mechanical properties, their ...
Ramaiah, KV +3 more
core
New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. [PDF]
Chen YY +8 more
europepmc +1 more source
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam +10 more
wiley +1 more source
A new operation scheme on oxide-based resistive-switching devices [resistive random access memory (RRAM)] is proposed to improve the controllability of switching processes in order to achieve an improved memory performance.
Liu, L. F. +19 more
core +1 more source
Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device. [PDF]
Shin HJ +5 more
europepmc +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
Exploring Design Dimensions in Flash-based Mass-memory Devices [PDF]
Mission-critical space system applications present several issues: a typical one is the design of a mass-memory device (i.e., a solid- state recorder).
Caramia, M. +4 more
core
A Novel Poly-N-Epoxy Propyl Carbazole Based Memory Device. [PDF]
Alahmadi ANM, Karimov KS.
europepmc +1 more source
A dynamically actuated reconfigurable topographical surface (DARTS) integrates contact‐mediated bactericidal nanotopography with programmable mechanical actuation to actively disrupt bacterial biofilms. Dynamic surface reconfiguration enhances bacterial killing and suppresses implant‐associated infections in vivo, providing a new strategy for active ...
Mohammad Asadi Tokmedash +4 more
wiley +1 more source

