Results 141 to 150 of about 3,154,535 (299)

Unified Phase‐Field Framework for Antiferroelectric, Ferroelectric and Dielectric Phases: Application to HZO Thin Films

Advanced Functional Materials, EarlyView.
HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj, Sandeep Sugathan, Jiyoung Kim, Si Joon Kim, Pil‐Ryung Cha   +4 more
wiley   +1 more source

NAD Memory: A Hybrid Memory Device Combined With NAND Flash Memory and DRAM

IEEE Access
Advancements in semiconductor technology have significantly improved the performance of DRAM and NAND flash, establishing them as high-speed main memory and high-capacity storage, respectively.
Sojoong Kim, Ji-Hoon Ahn, Minsuk Koo, Yoon Kim   +3 more
doaj   +1 more source

Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes. [PDF]

Nanomaterials (Basel), 2021
Wang L, Yang T, Wen D.
europepmc   +1 more source

Oxygen‐Vacancy‐Regulated Crystallization and Ferroelectric Phase Stabilization in Hf0.5Zr0.5O2 Thin Films

Advanced Functional Materials, EarlyView.
Temperature‐resolved in situ grazing‐incidence wide‐angle X‐ray scattering reveals that oxygen vacancies actively regulate crystallization in Hf0.5Zr0.5O2 thin films. By decoupling macroscopic strain from intrinsic phase evolution, a vacancy‐lean environment significantly lowers the activation energy barrier for crystallization.
Hyun Woo Jeong, Jaewook Lee, Junseong Seo, Hyojun Choi, Dong Hee Han, Seungjae Heo, Tae‐Yeol Jeon, Yunseok Kim, Younghwan Lee, Min Hyuk Park   +9 more
wiley   +1 more source

Charge Configuration Memory (CCM) Device – A Novel Approach to Memory [PDF]

Informacije MIDEM, 2021
A. Mraz, I. Vaskivskyi, R. Venturini, D. Svetin, Y. Chernolevska, D. Mihailović   +5 more
doaj   +1 more source

Bulk‐Like Spin Cycloid and Fast Switching in Freestanding BiFeO3

Advanced Functional Materials, EarlyView.
Freestanding BiFeO3 membranes overcome substrate‐induced constraints by simultaneously restoring the intrinsic bulk‐like spin cycloid and enabling ≈50% faster ferroelectric switching than substrate‐clamped epitaxial thin films. This combination of robust noncollinear antiferromagnetic order and efficient electric‐field switching establishes ...
Pratap Pal, Xiaoxi Deng, Gi‐Yeop Kim, Kyoungjun Lee, Jheng‐Cyuan Lin, Prithwijit Mandal, Jiangfeng Yang, Paul Steadman, Pascal Manuel, Roger D. Johnson, Si‐Young Choi, Paolo G. Radaelli, Chang‐Beom Eom   +12 more
wiley   +1 more source

Programmable Cryogenic Memory in a Ge/GeSi Heterostructure

Advanced Electronic Materials
Programmable memory components that operate optimally at cryogenic temperatures are essential for cryogenic computing architectures that seek to implement computing‐in‐memory.
Adelaide Bradicich, Tzu‐Ming Lu
doaj   +1 more source

Reservoir‐Driven Neuromorphic Computing Based on Composite Rare‐Earth/Transition Metal Oxide Memristor

Advanced Functional Materials, EarlyView.
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar, Haider Abbas, Muhammad Rabeel, Honggyun Kim, Ghulam Dastgeer, Muhammad Nasim, Furqan Zahoor, Yawar Abbas, Waqas Ahmad, Deok‐kee Kim   +9 more
wiley   +1 more source

Electrical Tuning of Ferrimagnetic Spin Alignment Angle and Compensation Temperature in Pt/IrMn3/CoGd Multilayers

Advanced Functional Materials, EarlyView.
Spin‐orbit torque controls the Néel vector of antiferromagnetic IrMn3, which selectively exchange‐couples with spins of Co only in the ferrimagnetic CoGd. This selective interfacial pinning induces the non‐collinear spiral spin configuration, leading to a non‐uniform distribution of local compensation temperature along the film thickness, and enabling ...
Won‐Chang Choi, Tae‐Bo Sim, Kwonjin Park, Tae‐Hwan Kim, Soobeom Lee, Bao Xuan Tran, Soojung Kim, Chun‐Yeol You, Jung‐Il Hong   +8 more
wiley   +1 more source

I device medicali intelligenti

, 2021
La questione centrale dei Device medicali intelligenti in senso ampio attiene alla responsabilità civile da danni prodotti dall’uso di tali tecnologie avanzate.
C. Perlingieri
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