Results 91 to 100 of about 167,971 (313)

Memory window in ferroelectric PVDF copolymer gate integrated MOSFET devices for nondestructive readout memory application

, 2007
Metal-Ferroelectric-Oxide-Si (MFEOS) field effect transistor (FET) with ferroelectric polyvinylidene fluoride trifluoroethylene copolymer (PVDF-TrFE) gate for nonvolatile memory application is demonstrated.
Seshu B Desu, Alok C Rastogi, Sang-Hyun Lim   +2 more
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Decoupling polarization and coercive field in AlScN/AlN/AlScN stack for enhanced performance in ferroelectric thin-film transistors

Nature Communications
AlScN emerges as a promising material for ferroelectric field-effect transistors due to its high coercive field (>6 MV/cm). However, its high remanent polarization (>100 μC/cm2) can degrade memory window and retention, limiting its use in memory ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Suk Hyun Lee, Wonho Choi, Yunjae Kim, Jung-Hae Choi, Tianjiao Xin, Yan Cheng, Cheol Seong Hwang   +9 more
doaj   +1 more source

Histories of Color in Critical Pedagogy: The Collective Re-Memory of Trauma and Resistance

, 2014
In this paper I analyze learning communities of color of the past and present and how they resist the dominant White narratives of racial progress and consensus in their social studies teaching, both in curricula and in praxis/structure.
Poole, Thomas
core  

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

Advanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo, Xiaotao Wang, Guannan Mu, Proloy Taran Das, Igor Veremchuk, Conrad Schubert, Aaron D. Cross, Yevhen Zabila, Xuan Peng, Larysa Baraban, Denys Makarov   +10 more
wiley   +1 more source

Temporal properties of cerebellar-dependent memory consolidation

, 2004
Classical conditioning of the nictitating membrane response in rabbits is a well defined model of cerebellar-dependent motor memory. This memory undergoes a period of consolidation after the training session, when it is sensitive to reversible ...
Yeo, CH, Attwell, PJE, Cooke, SF
core  

Investigation of silicon NC memory with improved threshold voltage window

, 2008
Memory capacitors with the structure of thin tunneling oxide layer/silicon nanocrystal (NC) layer/thick controlling oxide layer were fabricated by both LPCVD method and low energy ion implantation method.
null Yan Li, null Dake Wu, null Ruyan Tang, Li, Yan, null Zhe Yu, Yu, Zhe, Kuang, Yongbian, null Yongbian Kuang, null Ru Huang, Wu, Dake, Tang, Ruyan, Huang, Ru   +11 more
core   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Updating appetitive memory during reconsolidation window: critical role of cue-directed behavior and amygdala central nucleus.

Frontiers in Behavioral Neuroscience, 2013
When presented with a light cue followed by food, some rats simply approach the foodcup (Nonorienters), while others first orient to the light in addition to displaying the food-cup approach behavior (Orienters).
Megan E Olshavsky, Bryan eSong, Daniel J Powell, Carolyn E Jones, Marie H Monfils, Marie H Monfils, Hongjoo Joanne Lee   +6 more
doaj   +1 more source