Results 101 to 110 of about 2,144,114 (251)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Dongara Flour Mill, Western Australia, ca. 1970 [transparency] /

, 1970
Title devised by cataloguer from external sources.; Inscriptions: "Relic of early days, Clinch's Mill near Dongarra WA, History"--In ink on slide mount.; In: Collection of slides of Western Australia and the Australian Capital Territory, ca.
Scott Memory, R.
core  

Decoupling polarization and coercive field in AlScN/AlN/AlScN stack for enhanced performance in ferroelectric thin-film transistors

Nature Communications
AlScN emerges as a promising material for ferroelectric field-effect transistors due to its high coercive field (>6 MV/cm). However, its high remanent polarization (>100 μC/cm2) can degrade memory window and retention, limiting its use in memory ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Suk Hyun Lee, Wonho Choi, Yunjae Kim, Jung-Hae Choi, Tianjiao Xin, Yan Cheng, Cheol Seong Hwang   +9 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Suffering in silence: the politics of shaping cultural memory in the context of narratives around Korean “comfort women” in South Korea

, 2016
In Tangled Memories: The Vietnam War, the Aids Epidemic, and the Politics of Remembering, Marita Sturken discusses the shaping of cultural memory in the U.S. in the context of the Vietnam War and the AIDS epidemic.
Song, Hankyul
core  

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Sir Richard Trowbridge, the new State Governor, on St. George Terrace Perth, Western Australia, 25th November 1980 [transparency] /

, 1980
Title devised by cataloguer based on inscription.; Inscriptions: "Sir Richard Trowbridge reaches St. Geo Terrace. Perth as new State Governor. Police escort about to fall in Nov.
Scott Memory, R.
core  

Expanding window fountain codes for unequal error protection [PDF]

, 2007
A novel approach to provide unequal error protection (UEP) using rateless codes over erasure channels, named Expanding Window Fountain (EWF) codes, is developed and discussed.
Vukobratovic, D, Senk, Vojin, Dejan Vukobratovic, Piechocki, RJ, Sejdinovic, D, Vukobratovic, Dejan, Dino Sejdinovic, Angela Doufexi, Doufexi, A, Vojin Senk, Robert J. Piechocki, Senk, V   +11 more
core   +1 more source

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

Advanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo, Xiaotao Wang, Guannan Mu, Proloy Taran Das, Igor Veremchuk, Conrad Schubert, Aaron D. Cross, Yevhen Zabila, Xuan Peng, Larysa Baraban, Denys Makarov   +10 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source