Results 101 to 110 of about 36,882 (315)
Recent advances in materials and device engineering enable continuous, real‐time monitoring of muscle activity via wearable and implantable systems. This review critically summarizes emerging technologies for tracking electrophysiological, biomechanical, and oxygenation signals, outlines fundamental principles, and highlights key challenges and ...
Zhengwei Liao +4 more
wiley +1 more source
On the fractional domain generalization of memristive parametric oscillators
In this research, we generalize a family of electronic parametric oscillators in the fractional domain by using a state of the art circuit element namely fractional memristor. Such family of parametric oscillators is the memristor based Wien family which
Rawid Banchuin
doaj +1 more source
Optical memristors represent a monumental leap in the fusion of photonics and electronics, heralding a new era of applications from neuromorphic computing to artificial intelligence. However, current technologies are hindered by complex fabrication, limited endurance, high optical loss or low modulation depth.
Chenlei Li +15 more
openaire +2 more sources
A neuromorphic computing platform using spin‐orbit torque‐controlled magnetic textures is reported. The device implements bio‐inspired synaptic functions and achieves high performance in both pattern recognition (>93%) and combinatorial optimization (>95%), enabling unified processing of cognitive and optimization tasks.
Yifan Zhang +13 more
wiley +1 more source
Artificial Neuron Based on Electrical Anisotropy from WSe2 Field Effect Transistors
An artificial neuron was realized based on the anisotropic mobility of WSe2. Dendritic and axon‐multisynaptic performance of a neuron was achieved with optical and voltage pulses. Recognition accuracy of handwritten digits was obtained to 97% based on the synaptic weight of an artificial neuron.
Qi Sun +10 more
wiley +1 more source
Heteroysynaptic memtransistors are fabricated using a combination of π‐conjugated organic semiconductor TCTA and TMDC MoS2 heterostructure with bottom‐contact architecture. Non‐volatile heterosynaptic and homosynaptic functions such as long‐term plasticity and spike‐timing‐dependent plasticity are emulated by drain and gate pulses based on conduction ...
Taek Joon Kim +5 more
wiley +1 more source
Dual Bipolar Resistive Switching in Wafer‐Scalable 2D Perovskite Oxide Nanosheets‐Based Memristor
A wafer‐scalable memristor based on 2D Sr2Nb3O₁₀ perovskite oxide nanosheets exhibits dual bipolar resistive switching through controllable oxygen ion migration and redox reactions. This single device enables both STDP and anti‐STDP synaptic functions, achieving 86.4% MNIST accuracy in supervised spiking neural networks, offering a compact, energy ...
Sohwi Kim +11 more
wiley +1 more source
Ultrafast Multilevel Switching and Synaptic Behavior in a Planar Quantum Topological Memristor
Dry‐transferred Bi2Te3 layers enable a planar quantum topological memristor framework. In‐plane topological surface states facilitate ultrafast & low‐power operations. Coexisting analog and digital modes support current‐controlled multilevel states. PQTM exhibits 105 s retention, 103 cycles endurance, and reproducibility across 24 devices.
Mamoon Ur Rashid +12 more
wiley +1 more source
We demonstrate a hybrid WS2/CuInP2S6/graphene heterostructure integrated on a silicon nitride microring resonator for non‐volatile optical phase modulation with ultra‐low energy consumption and low insertion loss. While CIPS alone does not provide efficient optical index modulation, the engineered proposed device structure converts ferroelctric domain ...
Lalit Singh +10 more
wiley +1 more source
Cation‐Driven Valence Change Mechanism in 2D AgCrS2 for Ultralow‐Power and Reliable Memristors
A 2D AgCrS2 volatile memristor is shown to switch via a cation‐driven valence change mechanism, where Ag+ reversibly intercalates into tetrahedral vacancies between CrS2 layers to form a conductive Ag2CrS2 pathway without elemental Ag metallization. The device exhibits 0.2 V switching, nA‐compliance power down to 200 pW, and endurance beyond 3 × 105 ...
Yueqi Su +8 more
wiley +1 more source

