Results 131 to 140 of about 36,882 (315)

Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2‐Based Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu   +8 more
wiley   +1 more source

Reconfigurable, Non‐Volatile Switching in WO3 Film for Resistive Memory and Multistate Programming Toward Energy‐Efficient Neuromorphic Computing Applications

open access: yesAdvanced Electronic Materials, EarlyView.
WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal   +2 more
wiley   +1 more source

memristor

open access: yes
Citation: 'memristor' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.08840 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms.
openaire   +1 more source

Tunable Electronic and Optoelectronic Properties of MoS2 Through Molecular Coverage‐Controlled Polyoxometalate Doping

open access: yesAdvanced Electronic Materials, EarlyView.
Molecular charge transfer at the V12‐DyPc/MoS2 interface stabilizes trions, suppressing neutral A‐exciton emission and enabling controlled modulation of the A–‐trion population, bridging excitonic physics with polyoxometalate charge‐transport functionality.
Jean‐Pierre Glauber   +10 more
wiley   +1 more source

Electrode‐Engineered Dual‐Mode Multifunctional Lead‐Free Perovskite Optoelectronic Memristors for Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
A lead‐free perovskite memristive solar cell structure that call emulate both synaptic and neuronal functions controlled by light and electric fields depending on top electrode type. ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb ...
Michalis Loizos   +4 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Triboelectric Tactile Transducers for Neuromorphic Sensing and Synaptic Emulation: Materials, Architectures, and Interfaces

open access: yesAdvanced Energy and Sustainability Research, EarlyView.
Triboelectric nanogenerators are vital for sustainable energy in future technologies such as wearables, implants, AI, ML, sensors and medical systems. This review highlights improved TENG neuromorphic devices with higher energy output, better stability, reduced power demands, scalable designs and lower costs.
Ruthran Rameshkumar   +2 more
wiley   +1 more source

Designing Memristive Materials for Artificial Dynamic Intelligence

open access: yesAdvanced Intelligent Discovery, EarlyView.
Key characteristics required of memristors for realizing next‐generation computing, along with modeling approaches employed to analyze their underlying mechanisms. These modeling techniques span from the atomic scale to the array scale and cover temporal scales ranging from picoseconds to microseconds. Hardware architectures inspired by neural networks
Youngmin Kim, Ho Won Jang
wiley   +1 more source

Flexible Memory: Progress, Challenges, and Opportunities

open access: yesAdvanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan   +5 more
wiley   +1 more source

Toward Environmentally Friendly Hydrogel‐Based Flexible Intelligent Sensor Systems

open access: yesAdvanced Intelligent Discovery, EarlyView.
This review summarizes environmentally and biologically friendly hydrogel‐based flexible sensor systems focusing on physical, chemical, and physiological sensors. Furthermore, device concepts moving forward for the practical application are discussed about wireless integration, the interface between hydrogel and dry electronics, automatic data analysis
Sudipta Kumar Sarkar, Kuniharu Takei
wiley   +1 more source

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