Results 51 to 60 of about 36,882 (315)

Memristor-based genetic algorithm for image restoration

Journal of Electronic Science and Technology, 2022
This paper explores a way of deploying the classical algorithm named genetic algorithm (GA) with the memristor. The memristor is a type of circuit device with both characteristics of storage and computing, which provides the similarity between electronic
Yong-Bin Yu, Chen Zhou, Quan-Xin Deng, Yuan-Jing-Yang Zhong, Man Cheng, Zheng-Fei Kang   +5 more
doaj   +1 more source

A Survey of Memristive Threshold Logic Circuits

, 2016
In this paper, we review the different memristive threshold logic (MTL) circuits that are inspired from the synaptic action of flow of neurotransmitters in the biological brain.
James, Alex Pappachen, Jayadevi, Deepthi Anirudhan, Maan, Akshay Kumar   +2 more
core   +1 more source

Hardware implementation of memristor-based artificial neural networks

Nature Communications
Artificial Intelligence (AI) is currently experiencing a bloom driven by deep learning (DL) techniques, which rely on networks of connected simple computing units operating in parallel.
F. Aguirre, A. Sebastian, M. Le Gallo, Wenhao Song, Tong Wang, J. J. Yang, Wei D. Lu, Meng-Fan Chang, D. Ielmini, Yuch-Chi Yang, Adnan Mehonic, Anthony J. Kenyon, M. A. Villena, J. Roldán, Yuting Wu, Hung-Hsi Hsu, N. Raghavan, J. Suñé, Enrique Miranda, A. Eltawil, Gianluca Setti, Kamilya Smagulova, K. Salama, O. Krestinskaya, Xiaobing Yan, K. Ang, Samarth Jain, Sifan Li, O. Alharbi, S. Pazos, M. Lanza   +30 more
semanticscholar   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Advanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang, Rohan Dhall, Matthew M. Schneider, Cun Li, Chengyu Song, Sundar Kunwar, Hongyi Dou, Natanii R. Yazzie, Henry Tran, Daniel Appuing, Jim Ciston, Nicholas G. Cucciniello, Pinku Roy, Michael T. Pettes, John Watt, Winson Kuo, Haiyan Wang, Ye Cao, Rodney J. McCabe, Aiping Chen   +19 more
wiley   +1 more source

Effect of Oxygen Vacancy on the Conduction Modulation Linearity and Classification Accuracy of Pr_0.7Ca_0.3MnO₃ Memristor

Nanomaterials, 2021
An amorphous Pr0.7Ca0.3MnO3 (PCMO) film was grown on a TiN/SiO2/Si (TiN–Si) substrate at 300 °C and at an oxygen pressure (OP) of 100 mTorr. This PCMO memristor showed typical bipolar switching characteristics, which were attributed to the generation and
Yeon Pyo, Jong-Un Woo, Hyun-Gyu Hwang, Sahn Nahm, Jichai Jeong   +4 more
doaj   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

Advanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

Memristor Neural Network Training with Clock Synchronous Neuromorphic System

Micromachines, 2019
Memristor devices are considered to have the potential to implement unsupervised learning, especially spike timing-dependent plasticity (STDP), in the field of neuromorphic hardware research.
Sumin Jo, Wookyung Sun, Bokyung Kim, Sunhee Kim, Junhee Park, Hyungsoon Shin   +5 more
doaj   +1 more source

Reconfigurable neuromorphic memristor network for ultralow-power smart textile electronics

Nature Communications, 2022
Neuromorphic computing memristors are attractive to construct low-power- consumption electronic textiles due to the intrinsic interwoven architecture and promising applications in wearable electronics.
Tianyu Wang, Jialin Meng, Xufeng Zhou, Yue Liu, Zhenyu He, Qi Han, Qingxuan Li, Jiajie Yu, Zhenhai Li, Yongkai Liu, Hao Zhu, Q. Sun, David Wei Zhang, Peining Chen, Huisheng Peng, Lin Chen   +15 more
semanticscholar   +1 more source

A Van der Waals Optoelectronic Synapse with Tunable Positive and Negative Post‐Synaptic Current for Highly Accurate Spiking Neural Networks

Advanced Functional Materials, EarlyView.
A van der Waals optoelectronic synaptic device based on a ReS2/WSe2 heterostructure and oxygen‐treated h‐BN is presented, which enables both positive and negative PSCs through photocarrier polarity reversal. Bidirectional plasticity arises from gate‐tunable band bending and charge trapping‐induced quasi‐doping.
Hyejin Yoon, Soeun Park, Yeong Kwon Kim, Juhwan Baek, Ki Han Kim, Seongil Yun, Hyeonchang Son, Jeongeun Choi, Byung Chul Jang, Dong‐Ho Kang   +9 more
wiley   +1 more source

Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines [PDF]

, 2010
Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems.
Derek Abbott, Kamran Eshraghian, Kyoung-rok Cho, Omid Kavehei, Soon-ku Kang, Student Member, Sung-mo Steve Kang   +6 more
core