Results 51 to 60 of about 19,562 (279)

Conductance‐Dependent Photoresponse in a Dynamic SrTiO3 Memristor for Biorealistic Computing

open access: yesAdvanced Functional Materials, EarlyView.
A nanoscale SrTiO3 memristor is shown to exhibit dynamic synaptic behavior through the interaction of local electrical and global optical signals. Its photoresponse depends quantitatively on the conductance state, which evolves and decays over tunable timescales, enabling ultralow‐power, biorealistic learning mechanisms for advanced in‐memory and ...
Christoph Weilenmann   +8 more
wiley   +1 more source

Characterizing a standard cell library for large scale design of memristive based signal processing

open access: yesIET Circuits, Devices and Systems, 2022
In recent years, the use of memristors in circuits design has rapidly increased and attracted research interest. Advances have been made to both the size and the complexity of memristor designs.
Abubaker Sasi   +2 more
doaj   +1 more source

Memory circuit elements: from systems to applications

open access: yes, 2010
In this paper, we briefly review the concept of memory circuit elements, namely memristors, memcapacitors and meminductors, and then discuss some applications by focusing mainly on the first class.
Di Ventra, M.   +2 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Fractional memristor [PDF]

open access: yesApplied Physics Letters, 2017
Based on the differential conformal transformation in the fractional order, we defined the fractional memristor in contrast to the traditional (integer-order) memristor. As an example, a typical spin-transfer torque (STT) memristor (with the asymmetric resistance hysteresis) was proved to be a 0.8 fractional memristor.
Frank Z. Wang   +4 more
openaire   +2 more sources

Bio‐Inspired Molecular Events in Poly(Ionic Liquids)

open access: yesAdvanced Functional Materials, EarlyView.
Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley   +1 more source

Design and simulation of high-pass filter based on improved memristor

open access: yesGong-kuang zidonghua, 2013
In view of problem that traditional memristor model cannot conform to resistance variation characteristics of the memristor of physical model proposed by HP laboratory, the paper proposed an improved memristor model with threshold voltage.
YANG Biao, PAN Lia
doaj  

Design of chaotic circuit based on Knowm memristor

open access: yesElectronics Letters
Most previous works in the field of nonlinear memristive chaotic systems mainly focus on non‐material memristor while seldom on material memristor.
Fuping Wang, Faqiang Wang
doaj   +1 more source

Memristive Sisyphus circuit for clock signal generation

open access: yes, 2016
Frequency generators are widely used in electronics. Here, we report the design and experimental realization of a memristive frequency generator employing a unique combination of only digital logic gates, a single-supply voltage and a realistic threshold-
Nori, Franco   +2 more
core   +2 more sources

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

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