Results 61 to 70 of about 36,882 (315)

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Characterizing a standard cell library for large scale design of memristive based signal processing

IET Circuits, Devices and Systems, 2022
In recent years, the use of memristors in circuits design has rapidly increased and attracted research interest. Advances have been made to both the size and the complexity of memristor designs.
Abubaker Sasi, Arash Ahmadi, Majid Ahmadi   +2 more
doaj   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

Advanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak, Ryun‐Han Koo, Youngchan Cho, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jong‐Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin, Daewoong Kwon   +14 more
wiley   +1 more source

Fractional memristor [PDF]

Applied Physics Letters, 2017
Based on the differential conformal transformation in the fractional order, we defined the fractional memristor in contrast to the traditional (integer-order) memristor. As an example, a typical spin-transfer torque (STT) memristor (with the asymmetric resistance hysteresis) was proved to be a 0.8 fractional memristor.
Frank Z. Wang, Luping Shi, Huaqiang Wu, Na Helian, Leon O. Chua   +4 more
openaire   +2 more sources

Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures

Advanced Functional Materials, EarlyView.
The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji, Zi'Ang Gao, Shiva Prasad Poudel, Rui‐Qi Cao, Tianzhe Chen, Luxin Li, Chong Liu, Salvador Barraza‐Lopez, Stuart S. P. Parkin, Kai Chang   +9 more
wiley   +1 more source

Design and simulation of high-pass filter based on improved memristor

Gong-kuang zidonghua, 2013
In view of problem that traditional memristor model cannot conform to resistance variation characteristics of the memristor of physical model proposed by HP laboratory, the paper proposed an improved memristor model with threshold voltage.
YANG Biao, PAN Lia
doaj  

Design of chaotic circuit based on Knowm memristor

Electronics Letters
Most previous works in the field of nonlinear memristive chaotic systems mainly focus on non‐material memristor while seldom on material memristor.
Fuping Wang, Faqiang Wang
doaj   +1 more source

Designing Asymmetric Memristive Behavior in Proton Mixed Conductors for Neuromorphic Applications

Advanced Functional Materials, EarlyView.
Protonic devices that couple ionic and electronic transport are demonstrated as bioinspired neuromorphic elements. The devices exhibit rubber‐like asymmetric memristive behavior with slow voltage‐driven conductance increase and rapid relaxation, enabling simplified read–write operation.
Nada H. A. Besisa, Masaki Tsuji, Yoshihiro Furue, Yifan Geng, Satya P. Pati, Satoshi Hamasuna, Takeaki Yajima   +6 more
wiley   +1 more source

Memory circuit elements: from systems to applications

, 2010
In this paper, we briefly review the concept of memory circuit elements, namely memristors, memcapacitors and meminductors, and then discuss some applications by focusing mainly on the first class.
Di Ventra, M., Martinez-Rincon, J., Pershin, Y. V.   +2 more
core   +1 more source

Conductance‐Dependent Photoresponse in a Dynamic SrTiO3 Memristor for Biorealistic Computing

Advanced Functional Materials, EarlyView.
A nanoscale SrTiO3 memristor is shown to exhibit dynamic synaptic behavior through the interaction of local electrical and global optical signals. Its photoresponse depends quantitatively on the conductance state, which evolves and decays over tunable timescales, enabling ultralow‐power, biorealistic learning mechanisms for advanced in‐memory and ...
Christoph Weilenmann, Hanglin He, Marko Mladenović, Till Zellweger, Kevin Portner, Klemens Bauer, Guillaume Bellec, Mathieu Luisier, Alexandros Emboras   +8 more
wiley   +1 more source