Results 61 to 70 of about 19,562 (279)

Intrinsic Nanopore‐Assisted SnP2S6 Memristors With Ti Ion Dynamics for Compact Logic‐In‐Memory Hardware

open access: yesAdvanced Functional Materials, EarlyView.
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun   +7 more
wiley   +1 more source

Molecularly Engineered Highly Stable Memristors with Ultra‐Low Operational Voltage: Integrating Synthetic DNA with Quasi‐2D Perovskites

open access: yesAdvanced Functional Materials, EarlyView.
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane   +9 more
wiley   +1 more source

Hybrid Dislocated Control and General Hybrid Projective Dislocated Synchronization for Memristor Chaotic Oscillator System

open access: yesAdvances in Mathematical Physics, 2014
Some important dynamical properties of the memristor chaotic oscillator system have been studied in the paper. A novel hybrid dislocated control method and a general hybrid projective dislocated synchronization scheme have been realized for memristor ...
Junwei Sun, Chun Huang, Guangzhao Cui
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Fractional Order Memristor No Equilibrium Chaotic System with Its Adaptive Sliding Mode Synchronization and Genetically Optimized Fractional Order PID Synchronization

open access: yesComplexity, 2017
This paper introduces a fractional order memristor no equilibrium (FOMNE) chaotic system and investigates its adaptive sliding mode synchronization. Firstly the dynamic properties of the integer order memristor no equilibrium system are analyzed.
Karthikeyan Rajagopal   +4 more
doaj   +1 more source

Compensating Circuit to Reduce the Impact of Wire Resistance in a Memristor Crossbar-Based Perceptron Neural Network

open access: yesMicromachines, 2019
Wire resistance in metal wire is one of the factors that degrade the performance of memristor crossbar circuits. In this paper, an analysis of the impact of wire resistance in a memristor crossbar is performed and a compensating circuit is proposed to ...
Son Ngoc Truong
doaj   +1 more source

Efficient combinatorial optimization by quantum-inspired parallel annealing in analogue memristor crossbar

open access: yesNature Communications, 2023
Combinatorial optimization problems are prevalent in various fields, but obtaining exact solutions remains challenging due to the combinatorial explosion with increasing problem size.
Mingrui Jiang   +3 more
doaj   +1 more source

Memcapacitive Devices in Logic and Crossbar Applications [PDF]

open access: yes, 2017
Over the last decade, memristive devices have been widely adopted in computing for various conventional and unconventional applications. While the integration density, memory property, and nonlinear characteristics have many benefits, reducing the energy
Teuscher, Christof, Tran, Dat
core   +2 more sources

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav   +6 more
wiley   +1 more source

Effects of Parasitic Fractional Elements to the Dynamics of Memristor

open access: yesJournal of Electrical and Computer Engineering, 2019
In this research, we study the effects of the parasitic fractional elements to the dynamic of the memristor where both flux- and charge-controlled memristors have been considered. For doing so, the fractional differential equation-based approach has been
Rawid Banchuin
doaj   +1 more source

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