Results 101 to 110 of about 13,297 (272)

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

Molecular Crystal Memristor

Nature Nanotechnology
Abstract The emergence of memristors offers a revolutionary solution for achieving in-memory computing at the hardware level. However, existing memristors suffer from the inherent channel materials damage during cyclical resistive switching, rendering excessive energy consumption and poor endurance.
Lanhao Qin, Pengfei Guan, Jiefan Shao, Yu Xiao, Yimeng Yu, Jie Su, Conghui Zhang, Yanyong Li, Shenghong Liu, Pengyu Li, Decai Ouyang, Wenke He, Fenghao Liu, Kaichen Zhu, Kailang Liu, Zhenpeng Yao, Jinsong Wu, Yinghe Zhao, Huiqiao Li, Fei Hui, Peng Lin, Mario Lanza, Yuan Li, Tianyou Zhai   +23 more
openaire   +1 more source

Filamentary-based organic memristors for wearable neuromorphic computing systems

Neuromorphic Computing and Engineering
A filamentary-based organic memristor is a promising synaptic component for the development of neuromorphic systems for wearable electronics. In the organic memristors, metallic conductive filaments (CF) are formed via electrochemical metallization under
Chang-Jae Beak, Jihwan Lee, Junseok Kim, Jiwoo Park, Sin-Hyung Lee   +4 more
doaj   +1 more source

Electrode‐Engineered Dual‐Mode Multifunctional Lead‐Free Perovskite Optoelectronic Memristors for Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
A lead‐free perovskite memristive solar cell structure that call emulate both synaptic and neuronal functions controlled by light and electric fields depending on top electrode type. ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb ...
Michalis Loizos, Konstantinos Rogdakis, Konstantinos Chatzimanolis, Katerina Anagnostou, Emmanuel Kymakis   +4 more
wiley   +1 more source

Ultra-fast switching memristors based on two-dimensional materials

Nature Communications
The ability to scale two-dimensional (2D) material thickness down to a single monolayer presents a promising opportunity to realize high-speed energy-efficient memristors. Here, we report an ultra-fast memristor fabricated using atomically thin sheets of
S. S. Teja Nibhanupudi, Anupam Roy, Dmitry Veksler, Matthew Coupin, Kevin C. Matthews, Matthew Disiena, Ansh, Jatin V. Singh, Ioana R. Gearba-Dolocan, Jamie Warner, Jaydeep P. Kulkarni, Gennadi Bersuker, Sanjay K. Banerjee   +12 more
doaj   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors

Advanced Electronic Materials, EarlyView.
Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko, Alon Ascoli, Fernando Corinto, Yuriy V. Pershin   +3 more
wiley   +1 more source

Perovskite‐Nanowire‐Array‐Based Continuous‐State Programmable Artificial Synapse for Neuromorphic Computing

Advanced Intelligent Systems
Perovskite‐based memristors with tunable nonvolatile states are developed to mimic the synaptic interconnects of biological nervous systems and map neuromorphic computing networks to integrated circuits.
Yuting Zhang, Zichao Ma, Zhesi Chen, Swapnadeep Poddar, Yudong Zhu, Bing Han, Chak Lam Jonathan Chan, Yucheng Ding, Xiangpeng Kong, Zhiyong Fan   +9 more
doaj   +1 more source

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Electrochemical anodic oxidation assisted fabrication of memristors

International Journal of Extreme Manufacturing
Owing to the advantages of simple structure, low power consumption and high-density integration, memristors or memristive devices are attracting increasing attention in the fields such as next generation non-volatile memories, neuromorphic computation ...
Shuai-Bin Hua, Tian Jin, Xin Guo
doaj   +1 more source