Results 91 to 100 of about 9,687 (293)
Two‐dimensional Ag11 and Ag12 cluster‐assembled materials (CAMs) are synthesized, offering atomically precise platforms with tunable electronic properties. The resulting materials exhibit robust memristive switching and neuromorphic response, demonstrating their promise for advanced nanoelectronic and memory applications.
Noohul Alam +7 more
wiley +1 more source
Low-Temperature Solution-Based Molybdenum Oxide Memristors
Solution-based memristors have gained significant attention in recent years due to their potential for the low-cost, scalable, and environmentally friendly fabrication of resistive switching devices.
Asal Kiazadeh (3331272) +4 more
core +1 more source
Memristive Motion‐Streak Neuron for Spatiotemporal Multiple Object Detection
This work proposes motion‐streak neuron hardware using amorphous In–Ga–Zn–O optoelectronic memristors and dynamic memristors for spatiotemporal multiple‐object detection. The motion streak neuron array processes optical and electrical stimuli, allowing speed‐dependent filament relaxation to encode motion trajectories.
Hyungjun Park +9 more
wiley +1 more source
Abstract The emergence of memristors offers a revolutionary solution for achieving in-memory computing at the hardware level. However, existing memristors suffer from the inherent channel materials damage during cyclical resistive switching, rendering excessive energy consumption and poor endurance.
Lanhao Qin +23 more
openaire +2 more sources
Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing
Tunable volatile memristive devices can serve various neural‐inspired tasks that require different time windows of information retention. The ionic‐based volatility of the presented Pt/a‐STO/TaOx/Ta device stack can be reproducibly and controllably tuned in multiple ways.
Dimitrios Spithouris +7 more
wiley +1 more source
Stochastic compact model for memory and threshold switching memristors
Memristors are electron devices whose resistance changes according to the history of electrical signals applied to their two terminals. These resistance changes can remain for very long times or relax after a short time.
Jordi Suñé, Enrique Miranda
doaj +1 more source
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh +5 more
wiley +1 more source
Multi‐Modal Low‐Power Adaptive Braille Recognition System Based on Hf0.3Zr0.7O2 Memristor [PDF]
A multimodal adaptive perception system based on HZO ferroelectric memristor realizes efficient Braille digit recognition via reservoir computing. It delivers high recognition accuracy with ultralow‑energy analog computation, offering a promising hardware solution for environment‑robust neuromorphic assistive devices for visually impaired users ...
Xu J +9 more
europepmc +2 more sources
Models of memristors for spice simulations
— Memristors are novel devices, which can be used in applications such as memory, logic, analog circuits and neuromorphic systems. Several memristor technologies have been developed such as ReRAM (Resistive RAM), MRAM (Magnetoresistance RAM), and PCM ...
Shahar Kvatinsky +5 more
core +1 more source
Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh +9 more
wiley +1 more source

