Results 71 to 80 of about 9,687 (293)

Electronic and Photoelectronic Memristors Based on 2D Materials

Advanced Electronic Materials, 2022
Next‐generation memristive devices and neuromorphic computing have many fantastic properties in breaking down the memory walls of conventional von Neumann structures.
Kai Tang, Yang Wang, Chuanhui Gong, Chujun Yin, Miao Zhang, Xianfu Wang, Jie Xiong   +6 more
doaj   +1 more source

Reservoir‐Driven Neuromorphic Computing Based on Composite Rare‐Earth/Transition Metal Oxide Memristor

Advanced Functional Materials, EarlyView.
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar, Haider Abbas, Muhammad Rabeel, Honggyun Kim, Ghulam Dastgeer, Muhammad Nasim, Furqan Zahoor, Yawar Abbas, Waqas Ahmad, Deok‐kee Kim   +9 more
wiley   +1 more source

Halide perovskite memristors as flexible and reconfigurable physical unclonable functions

Nature Communications, 2021
Despite the impressive demonstrations with silicon and oxide memristors, realizing efficient roots of trust for resource-constrained hardware remains a challenge.
Rohit Abraham John, Nimesh Shah, Sujaya Kumar Vishwanath, Si En Ng, Benny Febriansyah, Metikoti Jagadeeswararao, Chip-Hong Chang, Arindam Basu, Nripan Mathews   +8 more
doaj   +1 more source

Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors

Advanced Functional Materials, EarlyView.
An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang, Mu‐Pai Lee, Jhen‐Dong Tsai, Liang‐Ying Hsieh, Jui‐Yuan Chen, Chun‐Wei Huang, Yen‐Fu Lin, Wen‐Wei Wu   +7 more
wiley   +1 more source

Nanoscale Insights into the Dynamics of Conductive Filament Growth/Dissolution in 2D Material‐Based Memristors

Advanced Science
2D materials have drawn widespread attention as promising candidates for electrochemical metallization (ECM) memristors. However, some critical questions related to the resistance switching (RS) behaviors of 2D material‐based ECM memristors, such as the ...
Chen Li, Rui Pan, Tao Xu, Jiaxin Shen, Yatong Zhu, Mingrui Zhou, Xiaohui Hu, Kuibo Yin, Litao Sun   +8 more
doaj   +1 more source

Gallium Oxide Memristors: A Review of Resistive Switching Devices and Emerging Applications

Nanomaterials
Gallium oxide (Ga2O3)-based memristors are gaining traction as promising candidates for next-generation electronic devices toward in-memory computing, leveraging the unique properties of Ga2O3, such as its wide bandgap, high thermodynamic stability, and ...
Alfred Moore, Yaonan Hou, Lijie Li
doaj   +1 more source

Memristors and nonequilibrium stochastic multistable systems

, 2022
The main aim of this special issue is to report the recent advances and new trends in memristors and nonequilibrium stochastic multistable systems, both theoretically and experimentally, within an interdisci-plinary context. In particular, memristors are
Dubkov, AA, Valenti, D, Carollo, A, Spagnolo, B   +3 more
core   +1 more source

Architecture‐Driven Functional Coupling in Vertically Aligned Nanocomposites

Advanced Functional Materials, EarlyView.
Vertically aligned nanocomposites define a growth‐engineered architecture in which vertical interfaces, strain fields, defect pathways, and phase connectivity are created simultaneously. This review shows how these architectural features couple ferroic, optical, ionic, electrochemical, and device responses, establishing design rules and open challenges
Md Shatil Islam‐Shanto, Javier Zamudio‐García, Abraham Sánchez‐Caballero, David Marrero‐López, Vincenzo Esposito   +4 more
wiley   +1 more source

Mechanical Properties Analysis of Flexible Memristors for Neuromorphic Computing

Nano-Micro Letters
Highlights This review systematically summarizes materials system, development history, device structure, stress simulation and applications of flexible memristors.
Zhenqian Zhu, Jiheng Shui, Tianyu Wang, Jialin Meng   +3 more
doaj   +1 more source

Silk Protein Based Volatile Threshold Switching Memristors for Neuromorphic Computing

Advanced Electronic Materials, 2022
Memristors based neuromorphic devices can efficiently process complex information and fundamentally overcome the bottleneck of traditional computing based on von Neumann architecture.
Momo Zhao, Saisai Wang, Dingwei Li, Rui Wang, Fanfan Li, Mengqi Wu, Kun Liang, Huihui Ren, Xiaorui Zheng, Chengchen Guo, Xiaohua Ma, Bowen Zhu, Hong Wang, Yue Hao   +13 more
doaj   +1 more source