Results 51 to 60 of about 7,847 (301)

Modelling of memristor networks and the effective memristor

Automatica
zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Anne-Men Huijzer, Arjan van der Schaft, Bart Besselink   +2 more
openaire   +1 more source

Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence

Science and Technology of Advanced Materials, 2021
The state-of-the-art artificial intelligence technologies mainly rely on deep learning algorithms based on conventional computers with classical von Neumann computing architectures, where the memory and processing units are separated resulting in an ...
Jingrui Wang, Xia Zhuge, Fei Zhuge
doaj   +1 more source

Neuromorphic applications using MOx-based memristors

, 2022
International audienceIn this chapter, we discuss the emerging computing concepts in the field of neuromorphic engineering involving MOx-based memristors.
Brivio, S., E. Vianello, S. Brivio, Vianello, E.   +3 more
core   +1 more source

Memristors and nonequilibrium stochastic multistable systems

, 2022
The main aim of this special issue is to report the recent advances and new trends in memristors and nonequilibrium stochastic multistable systems, both theoretically and experimentally, within an interdisci-plinary context. In particular, memristors are
Dubkov, AA, Valenti, D, Carollo, A, Spagnolo, B   +3 more
core   +1 more source

Advances in Metal Halide Perovskite Memristors: A Review from a Co‐Design Perspective

Advanced Science
The memristor has recently demonstrated considerable potential in the field of large‐scale data information processing. Metal halide perovskites (MHPs) have emerged as the leading contenders for memristors due to their sensitive optoelectronic response ...
Bowen Jiang, Xiang Chen, Xiaoxin Pan, Li Tao, Yuangqiang Huang, Jiahao Tang, Xiaoqing Li, Peixiong Wang, Guokun Ma, Jun Zhang, Hao Wang   +10 more
doaj   +1 more source

Comprehensive Study of SDC Memristors for Resistive RAM Applications

Energies
Memristors have garnered considerable attention within the scientific community as devices for emerging construction of Very Large Scale Integration (VLSI) systems.
Bartłomiej Garda, Karol Bednarz
doaj   +1 more source

The Ouroboros of Memristors: Neural Networks Facilitating Memristor Programming

Proceedings of the Neuronics Conference, 2023
arXiv (2024).
Yu, Zhenming, Yang, Ming-Jay, Finkbeiner, Jan, Siegel, Sebastian, Strachan, John Paul, Neftci, Emre   +5 more
openaire   +3 more sources

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Special Memristor and Memristor-Based Compact Neuron Circuit

Journal of Circuits, Systems and Computers, 2023
Implementing neuron circuit using memristor can be more effective thanks to some properties of memristor such as nonlinearity. For this reason, many memristor-based neuron circuits have been found in the literature. This study presents a memristor-based floating neuron circuit that exhibits different types of spikes.
Altan, Muhammet Alper, Orman, Kamil, Babacan, Yunus, Yeşil, Abdullah, Yeşil, Abdullah   +4 more
openaire   +2 more sources

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source