Results 51 to 60 of about 13,297 (272)
Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements [PDF]
, 2013 The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop.
Biolek, Dalibor +2 more
core +1 more source
Memristor Crossbar-based Hardware Implementation of IDS Method
, 2010 Ink Drop Spread (IDS) is the engine of Active Learning Method (ALM), which is the methodology of soft computing. IDS, as a pattern-based processing unit, extracts useful information from a system subjected to modeling. In spite of its excellent potential
Bagheri-Shouraki, Saeed +2 more
core +1 more source
Advanced Functional Materials, EarlyView.This study demonstrates an artificial polymodal nociceptor whose firing threshold is actively modulated by temperature. A volatile TiN/TiOx/ZnO/TiOx/ITO memristor shows interfacial ion–driven resistive switching and membrane‐potential‐like dynamics, enabling temperature‐dependent nociceptive behavior.
Chanmin Hwang +3 more
wiley +1 more source
Halide perovskite memristors as flexible and reconfigurable physical unclonable functions
Nature Communications, 2021 Despite the impressive demonstrations with silicon and oxide memristors, realizing efficient roots of trust for resource-constrained hardware remains a challenge.
Rohit Abraham John +8 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
Advancing Logic Circuits With Halide Perovskite Memristors for Next‐Generation Digital Systems
SmartMatThe potential of all‐inorganic halide perovskite‐based memristors as a solution to the limitations of traditional memory systems, particularly in the context of edge computing and next‐generation digital architectures, is investigated.
Mostafa Shooshtari +7 more
doaj +1 more source
Phase Transitions and Duality in Adiabatic Memristive Networks
, 2016 The development of neuromorphic systems based on memristive elements - resistors with memory - requires a fundamental understanding of their collective dynamics when organized in networks.
Di Ventra, Massimiliano +1 more
core +1 more source
Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems
Advanced Functional Materials, EarlyView.MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Advanced Functional Materials, EarlyView.Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
Applied Physics Letters, 2017 Based on the differential conformal transformation in the fractional order, we defined the fractional memristor in contrast to the traditional (integer-order) memristor. As an example, a typical spin-transfer torque (STT) memristor (with the asymmetric resistance hysteresis) was proved to be a 0.8 fractional memristor.
Frank Z. Wang +4 more
openaire +2 more sources