Results 61 to 70 of about 7,847 (301)
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Advances in memristors, memristive devices and systems
This book reports on the latest advances in and applications of memristors, memristive devices and systems. It gathers 20 contributed chapters by subject experts, including pioneers in the field such as Leon Chua (UC Berkeley, USA) and R.S.
Vaidyanathan, Sundarapandian +1 more
core +1 more source
Synaptic and Fast Switching Memristance in Porous Silicon-Based Structures
Memristors are two terminal electronic components whose conductance depends on the amount of charge that has flown across them over time. This dependence can be gradual, such as in synaptic memristors, or abrupt, as in resistive switching memristors ...
Vicente Torres-Costa +4 more
doaj +1 more source
90% yield production of polymer nano-memristor for in-memory computing
Though polymer memristors are promising for low‐power flexible edge computing applications, realizing efficient nanometer‐scale arrays remains a challenge.
Bin Zhang +17 more
doaj +1 more source
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
Flexible Memristors Fabricated through Sol-Gel Hydrolysis
Memristors were fabricated on flexible polyethylene terephthalate substrates consisting of an oxide film generated through hydrolysis of a spun-on sol-gel.
Joseph L. Tedesco +7 more
core +1 more source
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim +6 more
wiley +1 more source
Electronic and Photoelectronic Memristors Based on 2D Materials
Next‐generation memristive devices and neuromorphic computing have many fantastic properties in breaking down the memory walls of conventional von Neumann structures.
Kai Tang +6 more
doaj +1 more source
LiNbO3 dynamic memristors for reservoir computing
Information in conventional digital computing platforms is encoded in the steady states of transistors and processed in a quasi-static way. Memristors are a class of emerging devices that naturally embody dynamics through their internal electrophyiscal ...
Yuanxi Zhao +9 more
doaj +1 more source
Circuit voltages across memristors during the read and write phases.
A) Voltages during read phase across spike input memristors. B) Voltages during write phase across spike input memristors. C) Voltages during read phase across bias memristors. D) Voltages during write phase across bias memristors.
Michael Alexander Nugent (521510) +1 more
core +1 more source

